Abstract: A pair of electrodes which constitute an upper layer and a lower layer with respect to an interlayer insulation film are formed as different layers at respective pixel regions on a liquid-crystal-side surface of one substrate out of respective substrates which are arranged to face each other in an opposed manner by way of liquid crystal. At two pixel regions which are selected from the respective pixel regions, the height of background layers on which the electrodes which constitute the lower layers with respect to the interlayer insulation films are formed differs with respect to a surface of one substrate. The film thickness of the interlayer insulation film is set small with respect to the high background layer out of respective background layers which differ in height and is set large with respect to the low background layer out of respective background layers which differ in height.

Abstract: In a TFT type liquid crystal display device comprising first and second transparent substrates and a liquid crystal layer which is sandwiched between the first and second substrates, the first substrate includes a plurality of video signal lines, a plurality of scanning signal lines and a plurality of pixel regions which are formed as regions surrounded by the video signal lines and the scanning signal lines, each pixel region includes at least one active element, one pixel electrode and one common electrode, and color filter layers are formed between the pixel electrodes and the liquid crystal layer. The liquid crystal display device is substantially characterized in that the common electrodes are formed as layers above the color filters, the pixel electrodes are formed as layers below the color filters, and the color filters are superposed at least on the whole surfaces of the pixel electrodes in the pixel region.

Abstract: The present invention provides a novel photolithography processes using photoresist pattern having at least two areas which has different thickness from each other for a fabrication method for a liquid crystal display device having reversed staggered and channel-etched type thin film transistors, reduce a number of photolithography processes required for whole of the fabrication process of the liquid crystal display device, and improve brightness of the liquid crystal display device.