Abstract: According to the embodiment, a pattern after lithography is derived by using a mask pattern. The mask pattern is corrected by moving a first moving target pattern so that a first evaluation value calculated with respect to this pattern after lithography satisfies a first condition. Next, a pattern after lithography is derived by using the mask pattern after correction. The mask pattern after correction is further corrected by moving a second moving target pattern so that a second evaluation value calculated with respect to this pattern after lithography satisfies a second condition.

Abstract: A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.

Abstract: The compounds represented in general formula (1) or a salt thereof are useful for glucocorticoid receptor modulators. In the formula, R1 represents a lower alkyl group, a lower cycloalkyl group, an aryl group and the like; R2 represents a hydrogen atom, a lower alkyl group and the like; R3 represents a hydrogen atom, a lower alkyl group and the like; R4 and R5 represent a hydrogen atom, a lower alkyl group and the like; R6 represents a hydrogen atom, a lower alkyl group and the like; R7 represents a hydrogen atom, a lower alkyl group, a lower alkenyl group and the like; W represents an oxygen atom, a sulfur atom, NR8 and the like; R8 represents a hydrogen atom, a lower alkyl group and the like; X represents an oxygen atom or a sulfur atom; Y represents a lower alkylene group and the like; Z represents an oxygen atom, a sulfur atom, NR9, OCO or OSO2; R9 represents a hydrogen atom, a lower alkyl group and the like respectively.

Abstract: The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group or a nitro group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a chalcogen atom; and P represents 0, 1, 2 or 3.

Abstract: An object of the present invention is to study synthesis of a novel 1,2-dihydroquinoline derivative and to find a pharmacological action of the derivative. A compound represented by the general formula (1) or a salt thereof is effective in the treatment of a glucocorticoid receptor-related disease. In the formula, the ring X represents a benzene ring or a pyridine ring; R1 represents a halogen atom, an alkyl group, a hydroxy group, an alkoxy group, an amino group or the like; p represents an integer of 0 to 5; R2 represents a halogen atom, an alkyl group, a hydroxy group or the like; q represents an integer of 0 to 2; R3 represents a hydrogen atom, an alkyl group, an alkenyl group or the like; R4 and R5 represent a hydrogen atom or the like; R6 represents a hydrogen atom or the like; A represents an alkylene group or the like; and R7 represents OR8, NR8R9, SR8, S(O)R8 or S(O)2R8, wherein R8 represents an aryl group, a heterocyclic group or the like and R9 represents a hydrogen atom or the like.

Abstract: The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represent a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group, a nitro group or a cyano group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; Z represents a benzene ring or a heterocyclic ring; and P represents 0, 1, 2 or 3.

Abstract: The compounds represented in general formula (1) and a salt thereof are useful for glucocorticoid receptor modulator. The R1 represents a hydrogen atom or a lower alkyl group; R2 represents a hydrogen atom or a lower alkyl group; R3 and R4 may be the same or different and represents a hydrogen atom or a lower alkyl group; R5 represents a hydrogen atom or a lower alkyl group; R6 represents a halogen atom, a lower alkyl group, a hydroxy group, a lower alkoxy group, a nitro group or a cyano group; X represents —C(O)—, —C(O)NR8—, —S(O)2— and the like; R7 and/or R8 may be the same or different and represent a hydrogen atom, a lower alkyl group which may have a substituent, an aryl group which may have a substituent, a heterocyclic group which may have a substituent, a lower alkoxy group which may have a substituent and the like; Y represents a lower alkylene group; and P represents 0, 1, 2 or 3.

Abstract: A mask manufacturing system and a mask data creating method reusing data for processing information and environment in the past to reduce a photomask developing period, and a manufacturing method of a semiconductor device are disclosed. According to one aspect of the present invention, it is provided a mask manufacturing system comprising a storage device storing processing data for semiconductor integrated circuits processed in the past, a plurality of operation processing modules, a module selecting section selecting at least one operation processing modules, an optical proximity effect correction section executing optical proximity effect correction to a processing object data and generating a correction data by utilizing past correction information applied for a stored data equivalent to the processing object data, a converting section converting the processing object data into mask data, and a drawing system drawing a mask pattern based on the mask data.

Abstract: An object of the present invention is to synthesize a novel 1,2,3,4-tetrahydroquinoxaline derivative represented by formula (1) and to find a pharmacological action of the derivative. In the formula, the R1 represents a halogen, an alkyl, cycloalkyl, aryl or heterocyclic group, or the like; p represents 0 to 5; R2 represents a halogen, an alkyl, hydroxyl or alkoxy group, or the like; q represents 0 to 2; R3 represents hydrogen, an alkyl, alkenyl, alkylcarbonyl or arylcarbonyl group, or the like; R4 and R5 independently represent hydrogen, a halogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; R6 represents hydrogen, an alkyl, alkenyl, alkynyl, cycloalkyl, aryl or heterocyclic group, or the like; A represents an alkylene; R7 represents OR8, NR8R9, SR8, S(O)R8, S(O)2R8; and X represents O or S.

Abstract: A pattern data generation method of an aspect of the present invention, the method includes creating at least one modification guide to modify a modification target point contained in pattern data, evaluating the modification guides on the basis of an evaluation item, the evaluation item being a change in the shape of the pattern data for the modification target point caused by the modification based on the modification guides or a change in electric characteristics of a pattern formed in accordance with the pattern data, selecting a predetermined modification guide from among the modification guides on the basis of the evaluation result of the modification guides, and modifying the modification target point in accordance with the selected modification guide.

Abstract: Disclosed is a mask data processing method of correcting a hierarchical structure. In the case that in design data having a hierarchical structure including a plurality of cells each having a design pattern, when the total number of graphic forms or the total edge length of a design pattern on which the calculation of mask data processing is to be executed, the amount of calculation to be executed, or the expansion degree presumably becomes equal to or larger than a predetermined threshold value if the calculation of the mask data processing is executed on the design data having the initial hierarchical structure, the hierarchical structure is corrected. This correction is performed to reduce the total number of graphic forms or the total edge length of the design pattern on which the calculation is to be executed, the amount of calculation to be executed, of the expansion degree.

Abstract: A method for generating test patterns utilized in manufacturing a semiconductor device includes creating mini-data concerning a partial area pattern used in designing the semiconductor device, subjecting the mini-data to data processing in accordance with a condition of a manufacturing process of the semiconductor device, thereby creating processed mini-data, extracting a marginless point in the processed mini-data where a process margin is less than a predetermined threshold in a manufacturing process of the semiconductor device, determining a class of the marginless point in accordance with a criticality and a category of the marginless point, determining a parameter and a range of the parameter used for the marginless point in accordance with the class of the marginless point, and generating a plurality of test patterns to which different values of the parameter are respectively applied within the range.

Abstract: A pattern forming method including modifying design data subjected to a first design rule check in design data of a pattern to be formed in a semiconductor substrate, performing the first design rule check to the modified design data again, outputting the modified design data which does not violate the first design rule as pattern forming design data used in actual pattern formation, and performing a second design rule check having an allowable range wider than that of the first design rule to the modified design data which violates the first design rule, and outputting the modified design data which does not violate the second design rule as the pattern forming design data, and redesigning the pattern to satisfy the second design rule or adjusting the modification guideline such that the modified design data which violates the second design rule satisfies the second design rule.

Abstract: A design layout generating method for generating a design pattern of a semiconductor integrated circuit is disclosed. This method comprises modifying a first modification area extracted from a design layout by a first modifying method, and modifying a second modification area extracted from the design layout so as to include the first modification area by a second modifying method on the basis of a pattern modifying guideline calculated from at least a partial design layout in the second modification area.

Abstract: A mask manufacturing system and a mask data creating method reusing data for processing information and environment in the past to reduce a photomask developing period, and a manufacturing method of a semiconductor device are disclosed. According to one aspect of the present invention, it is provided a mask manufacturing system comprising a storage device storing processing data for semiconductor integrated circuits processed in the past, a plurality of operation processing modules, a module selecting section selecting at least one operation processing modules, an optical proximity effect correction section executing optical proximity effect correction to a processing object data and generating a correction data by utilizing past correction information applied for a stored data equivalent to the processing object data, a converting section converting the processing object data into mask data, and a drawing system drawing a mask pattern based on the mask data.

Abstract: A method for generating test patterns utilized in manufacturing a semiconductor device includes creating mini-data concerning a partial area pattern used in designing the semiconductor device, subjecting the mini-data to data processing in accordance with a condition of a manufacturing process of the semiconductor device, thereby creating processed mini-data, extracting a marginless point in the processed mini-data where a process margin is less than a predetermined threshold in a manufacturing process of the semiconductor device, determining a class of the marginless point in accordance with a criticality and a category of the marginless point, determining a parameter and a range of the parameter used for the marginless point in accordance with the class of the marginless point, and generating a plurality of test patterns to which different values of the parameter are respectively applied within the range.

Abstract: A pattern correction method executed by a computer includes a first correction and a second correction. The first correction is executed by calculating a correction value, in consideration for an optical proximity effect, for edges (first edges) meeting a condition among the edges constituting a designed pattern. Subsequently, The second correction is executed for an edge (second edge) which does not meet the condition, by use of the correction value of any one of the edges (first edges) adjacent to the second edge among the first edges for which the first correction is executed, thus connecting the corrected first edge and the corrected second edge by a line segment. The pattern is corrected to a shape suitable for a mask drawing and a check with simple processing.

Abstract: A mask pattern generation method of generating a mask pattern from a designed pattern, comprising preparing the designed pattern, preparing a correction parameter, preparing a first correction library in which a plurality of pairs of an edge coordinate group and a correction value group to correct the edge coordinate group is registered, acquiring edge coordinate groups of the designed patterns, generating a second correction library in which only the plurality of pairs of an edge coordinate group agreeing with the acquired edge coordinate group and the correction value group is registered in the first correction library and simulation using the correction parameter, and correcting the designed pattern using the second correction library.

Abstract: A mask data generating apparatus comprising: a division module configured to extract a line segment and dividing the extracted line segment into a suitable length; a correction value calculation module configured to calculate correction value calculating points from each divided edge; a first calculated center point calculation module configured to set first calculated center points and a shape of a pattern; a first rectangular region preparation module configured to prepare first simulation regions and a plurality of first rectangular regions which overlap with each other; a second calculated center point calculation module configured to acquire second rectangular regions, and calculating second calculated center points based on the second rectangular regions; a second simulation region preparation module configured to acquire second simulation regions; a process simulation execution module configured to calculate a correction value; and a correction pattern preparation module configured to prepare the corre

Abstract: A mask data generating apparatus comprising: a division module configured to extract a line segment and dividing the extracted line segment into a suitable length; a correction value calculation module configured to calculate correction value calculating points from each divided edge; a first calculated center point calculation module configured to set first calculated center points and a shape of a pattern; a first rectangular region preparation module configured to prepare first simulation regions and a plurality of first rectangular regions which overlap with each other; a second calculated center point calculation module configured to acquire second rectangular regions, and calculating second calculated center points based on the second rectangular regions; a second simulation region preparation module configured to acquire second simulation regions; a process simulation execution module configured to calculate a correction value; and a correction pattern preparation module configured to prepare the corre