Abstract: Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.

Abstract: A first block that is assigned a first sequence identifier can be identified. A determination can be made as to whether the assigned first sequence identifier satisfies a threshold sequence identifier condition that corresponds to a difference between the first sequence identifier assigned to the first block and second sequence identifier assigned to a second block. In response to determining that the assigned first sequence identifier satisfies the threshold sequence identifier condition, a media management operation can be performed on the first block.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including detecting a read error with respect to data residing in a block of the memory device, wherein the block is associated with a voltage offset bin, determining an order of a plurality of error-handling operations to be performed to recovery data associated with the read error, wherein the order is specified in a metadata table and is based on the voltage offset bin associated with the block, and performing at least one error-handling operation of the plurality of error-handling operations in the order specified by the metadata table.

Abstract: A request to perform a secure erase operation for a memory component can be received. A voltage level that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can be associated with a program operation to place a memory cell of the memory component at another voltage level that exceeds the voltage level that is applied to the unselected wordlines of the memory component during the read operation.

Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including performing a read operation on a block of the memory device by applying a read reference voltage to a selected wordline of the block and applying a pass-through voltage having a first value to a plurality of unselected wordlines of the block; detecting a read error in response to performing the read operation; and setting the pass-through voltage to a second value, wherein the second value is greater than the first value.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including initiating a read operation with respect to a block of the memory device, selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria includes at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss, and applying the default read offset to a read operation performed with respect to the block.

Abstract: A processing device of a memory sub-system is configured to receive a request to add content to a system data structure, wherein a first plurality of blocks of a common pool of blocks are allocated to the system data structure and a second plurality of blocks of the common pool of blocks are allocated to user data; determine whether user data has been written to the second plurality of blocks of the common pool of blocks within a threshold amount of time; and responsive to determining that the user data has not been written to the second plurality of blocks within the threshold amount of time, allocate a block from the second plurality of blocks of the common pool of blocks allocated to user data to the first plurality of blocks of the common pool of blocks allocated for the system data structure.

Abstract: A processing device in a memory system maintains a counter to track a number of read operations performed on a data block of a memory device and determines that the number of read operations performed on the data block satisfies a first threshold criterion. The processing device further determines whether a number of scan operations performed on the data block satisfies a scan threshold criterion. Responsive to the number of scan operations performed on the data block satisfying the scan threshold criterion, the processing device performs a first data integrity scan to determine one or more first error rates for the data block, each of the one or more first error rates corresponding to a first set of wordlines of the data block, the first set comprising first alternating pairs of adjacent wordlines.

Abstract: A processing device of a memory sub-system is configured to detect a power on event that is associated with a memory device and indicates that power has been restored to the memory device; estimate a duration of a power off state preceding the power on event associated with the memory device; and update voltage bin assignments of a plurality of blocks associated with the memory device based on the duration of the power off state.

Abstract: A plurality of host data items, including a first host data item and a second host data item, are received. The second host data item consecutively follows the first host data item. The first host data item is stored in a first page of a first logical unit of the memory device, wherein the first page is associated with a first page number. A second page number is determined for the second host data item based on an offset value that corresponds to a number of pages per wordline of the memory device. A second logical unit of the memory device is identified. The second host data item is stored in a second page of the second logical unit, wherein the second page is identified by the second page number, and the first page and the second page are associated with a fault-tolerant stripe.

Abstract: A program operation is executed on a memory sub-system. In response to receiving a request to execute a read operation, executing a first program suspend operation to suspend the program operation. In response to a completion of the read operation, a program resume operation is executed to resume execution of the program operation. A delay period is established following execution of the program resume operation during which execution of the program operation is completed. A second program suspend operation is executed following the delay period.

Abstract: A block family associated with a memory device is initialized. An initial value of a power cycle count associated with the memory device is stored. Responsive to programming a block residing in the memory device, the block is associated with the block family. Responsive to determining that a current value of the power cycle count exceeds the initial value of the power cycle count, the block family is closed. Responsive to determining that a time period that has elapsed since initializing the block family exceeds a threshold period, the block family is closed.

Abstract: An example memory sub-system comprises: a memory device; and a processing device, operatively coupled with the memory device. The processing device is configured to: receive a first host data item; store the first host data item in a first page of a first logical unit of a memory device, wherein the first page is associated with a fault tolerant stripe; receive a second host data item; store the second host data item in a second page of the first logical unit of the memory device, wherein the second page is associated with the fault tolerant stripe, and wherein the second page is separated from the first page by one or more wordlines including a dummy wordline storing no host data; and store, in a third page of a second logical unit of the memory device, redundancy metadata associated with the fault tolerant stripe.

Abstract: A determination that a first programming operation has been performed on a particular memory cell can be made. A determination can be made, based on one or more threshold criteria, whether the particular memory cell has transitioned from a state associated with a decreased error rate to another state associated with an increased error rate. In response to determining that the particular memory cell has transitioned from the state associated with the decreased error rate to the another state associated with the increased error rate, an operation can be performed on the particular memory cell to transition the particular memory cell from the another state associated with the increased error rate to the state associated with the decreased error rate.

Abstract: A method includes associating each block of a plurality of blocks of a memory device with a corresponding frequency access group of a plurality of frequency access groups based on corresponding access frequencies, and performing scan operations on blocks of each of the plurality of frequency access groups using a scan frequency that is different from scan frequencies of other frequency access groups. A scan operation performed on a frequency access group with a higher access frequency uses a higher scan frequency than a scan operation performed on a frequency access group with a lower access frequency.

Abstract: A processing device of a memory sub-system is configured to identify a read level of a plurality of read levels associated with a voltage bin of a plurality of voltage bins of a memory device; assign a first threshold voltage offset to the read level of the voltage bin; assign a second threshold voltage offset to the read level of the voltage bin; perform, on block associated with the read level, a first operation of a first operation type using the first threshold voltage offset; and perform, on the blocks associated with the read level, a second operation of a second operation type using the second threshold voltage offset.

Abstract: A processing device of a memory sub-system is configured to identify a plurality of blocks assigned to a first voltage bin of a plurality of voltage bins of a memory device; identify a subset of the plurality of blocks having a time after program (TAP) within a predetermined threshold period of time from a second TAP associated with a transition boundary between the first voltage bin and a subsequent voltage bin of the plurality of voltage bins; determine a threshold voltage offset associated with the subset of blocks; and associate the threshold voltage offset with the subsequent voltage bin.

Abstract: A first block that is assigned a first sequence identifier can be identified. A determination can be made as to whether the assigned first sequence identifier satisfies a threshold sequence identifier condition that corresponds to a difference between the first sequence identifier assigned to the first block and second sequence identifier assigned to a second block. In response to determining that the assigned first sequence identifier satisfies the threshold sequence identifier condition, a media management operation can be performed on the first block.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including detecting a read error with respect to data residing in a block of the memory device, wherein the block is associated with a voltage offset bin, determining an ordered set of error-handling operations to be performed to the data, determining a most recently performed error-handling operation associated with the voltage offset bin; adjusting an order of the set of error-handling operations by positioning the most recently performed error-handling operation within a predetermined position in the order of the set of error-handling operations; and performing one or more error-handling operations of the set of error-handling operations in the adjusted order until data associated to the read error is recovered.