Patents by Inventor Sandeep Kumar Goel

Sandeep Kumar Goel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140015583
    Abstract: Systems and methods are disclosed for testing a stack of dies and inserting a repair circuit which, when enabled, compensates for a delay defect in the die stack, particularly where the defect is located in the inter-die data transfer path. Intra-die and inter-die slack values are determined to establish which die or dies in the die stack would benefit from the insertion of a repair circuit.
    Type: Application
    Filed: July 11, 2012
    Publication date: January 16, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sandeep Kumar GOEL, Ashok MEHTA
  • Publication number: 20140015584
    Abstract: Systems and methods are disclosed for testing dies in a stack of dies and inserting a repair circuit which, when enabled, compensates for a delay defect in the die stack. Intra-die and inter-die slack values are determined to establish which die or dies in the die stack would benefit from the insertion of a repair circuit.
    Type: Application
    Filed: September 9, 2013
    Publication date: January 16, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Sandeep Kumar GOEL
  • Patent number: 8627160
    Abstract: A system and device for reducing instantaneous voltage droop (IVD) during a scan shift operation. In one embodiment, a system includes a first group of clock gating cells configured to receive an input clock signal and a first group of flip-flops coupled to the first group of clock gating cells. Each clock gating cell of the first group of clock gating cells includes a first delay element to delay the input clock signal by a first duration during a scan shift operation. The system also includes a second group of clock gating cells configured to receive the input clock signal, and a second group of flip-flops coupled to the second group of clock gating cells. Each clock gating cell of the second group of clock gating cells includes a second delay element to delay the input clock signal by a second duration during the scan shift operation.
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: January 7, 2014
    Assignee: LSI Corporation
    Inventors: Narendra Devta-Prasanna, Sandeep Kumar Goel, Arun K Gunda
  • Publication number: 20130326463
    Abstract: The present disclosure relates to a method of routing probe pads to micro-bumps of an interposer. An interposer is provided having target micro-bumps and probe pads. The probe pads are initially unassigned. Target micro-bump locations and probe pad locations are obtained. Possible route assignments from the probe pads to the target micro-bumps are obtained. Costs are developed for the possible route assignments at least partially according to the target micro-bump locations and the probe pad locations. Final assignments are selected from the possible assignments according to the costs.
    Type: Application
    Filed: May 31, 2012
    Publication date: December 5, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Lin Chuang, Cheng-Pin Chiu, Ching-Fang Chen, Ji-Jan Chen, Sandeep Kumar Goel, Yun-Han Lee, Charles C.C. Liu
  • Patent number: 8578309
    Abstract: A system and method is disclosed for functional verification and/or simulation of dies in a multi-die 3D ICs. The system and method include converting an I/O trace, embodied as a Value Change Dump, to one or more Universal Verification Methodology objects. This conversion aids in identify and fixing issues contained in die.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: November 5, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ashok Mehta, Stanley John, Sandeep Kumar Goel, Kai-Yuan Ting
  • Patent number: 8566766
    Abstract: System and method for effectively detecting small delay defects is disclosed. The method first loads layout information of an integrated circuit. Then, the nets and paths of the integrated circuit are partitioned into two groups based upon their physical information. The physical information comprises the length of each path and net and the number of vias at each path and net. A timing-aware automatic test pattern generator is configured to generate test patterns for the first group having paths and nets susceptible to small delay defects. A traditional transition delay fault test pattern generator is configured to generate test patterns for the second group.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: October 22, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sandeep Kumar Goel, Saurabh Gupta, Wei-Pin Changchien, Chin-Chou Liu
  • Patent number: 8566657
    Abstract: A method includes shifting a first logic sequence into a first scan chain having a first plurality of scan blocks coupled together, outputting a second logic sequence from each of the plurality of scan blocks in the first scan chain to a respective scan block in a second scan chain, and shifting a third logic sequence out of the second scan chain. At least one improperly functioning scan block of the first scan chain is identified based on the third logic sequence shifted out of the second scan chain.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: October 22, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Sandeep Kumar Goel
  • Patent number: 8561001
    Abstract: Systems and methods are disclosed for testing dies in a stack of dies and inserting a repair circuit which, when enabled, compensates for a delay defect in the die stack. Intra-die and inter-die slack values are determined to establish which die or dies in the die stack would benefit from the insertion of a repair circuit.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: October 15, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Sandeep Kumar Goel
  • Patent number: 8552734
    Abstract: The integrated circuit (10) has an internal power supply domain with a power supply voltage adaptation circuit (14) to adapt the power supply voltage in the power supply domain. Typically, a plurality of such domains is provided wherein the power supply voltage can be adapted independently. During testing an internal power supply voltage is supplied to a temporally integrating analog to digital conversion circuit (16) in the integrating circuit (10). A temporally integrated value of the power supply voltage is measured during a measurement period. Preferably, integrating measurements of a plurality of internal supply voltages are performed in parallel during the same measurement time interval. Preferably a further test is performed by changing over between mutually different supply voltages during a further measurement period. In this way the measured integrated supply voltage can be used to check the speed of the change over between the different voltages.
    Type: Grant
    Filed: April 13, 2006
    Date of Patent: October 8, 2013
    Assignee: NXP B.V.
    Inventors: Rinze I. M. P. Meijer, Sandeep Kumar Goel, Jose De Jesus Pineda De Gyvez
  • Publication number: 20130238309
    Abstract: A method for dynamic frequency scaling (DFS) on the electronic systems level (ESL). The method can run in a virtual environment and dynamically scale the frequency of a virtual component based on a first transaction time and a second transaction time.
    Type: Application
    Filed: March 7, 2012
    Publication date: September 12, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Yuan TING, Ashok Mehta, Sandeep Kumar Goel, Stanley John
  • Patent number: 8515695
    Abstract: A method and an apparatus for evaluating SDDC of a test pattern set are disclosed. In one embodiment, the method includes: (1) selecting a transition fault of an IC detected by a test pattern set, the transition fault occurring at a fault site of the IC, (2) identifying path delays of a longest testable path and a longest tested path of the IC, wherein both the longest testable path and the longest tested path include the fault site, (3) determining a SDD detection probability for both the longest testable path and the longest tested path based on a probability that a SDD will be detected if present at the fault site and (4) calculating SDDC for the transition fault by dividing the SDD detection probability of the longest tested path by the SDD detection probability of the longest testable path.
    Type: Grant
    Filed: April 9, 2009
    Date of Patent: August 20, 2013
    Assignee: LSI Corporation
    Inventors: Narendra B. Devta-Prasanna, Sandeep Kumar Goel
  • Publication number: 20130193980
    Abstract: A system and method is disclosed for functional verification of multi-die 3D ICs. The system and method include a reusable verification environment for testing each die in a stack of dies individually without having to simultaneously operate all of the dies in the stack. The system and method includes converting an input/output (“IO”) trace from a die verification test from a first format to a second format to improve performance.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 1, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Stanley JOHN, Ashok Mehta, Sandeep Kumar Goel, Kai-Yuan Ting
  • Publication number: 20130198706
    Abstract: A system and method is disclosed for functional verification and/or simulation of dies in a multi-die 3D ICs. The system and method include converting an I/O trace, embodied as a Value Change Dump, to one or more Universal Verification Methodology objects. This conversion aids in identify and fixing issues contained in die.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 1, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ashok Mehta, Stanley John, Sandeep Kumar Goel, Kai-Yuan Ting
  • Publication number: 20130187292
    Abstract: A structure comprises a first die, a second die, an interposer, a third die, and a fourth die. The first die and the second die each have a first surface and a second surface. First conductive connectors are coupled to the first surfaces of the first and second dies, and second conductive connectors are coupled to the second surfaces of the first and second dies. The interposer is over the first and second dies. A first surface of the interposer is coupled to the first conductive connectors, and a second surface of the interposer is coupled to third conductive connectors. The third and fourth dies are over the interposer and are coupled to the third conductive connectors. The first die is communicatively coupled to the second die through the interposer, and/or the third die is communicatively coupled to the fourth die through the interposer.
    Type: Application
    Filed: January 20, 2012
    Publication date: July 25, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mark Semmelmeyer, Sandeep Kumar Goel
  • Publication number: 20130147505
    Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 13, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mill-Jer WANG, Ching-Fang CHEN, Sandeep Kumar GOEL, Chung-Sheng YUAN, Chao-Yang YEH, Chin-Chou LIU, Yun-Han LEE, Hung-Chih LIN
  • Patent number: 8436639
    Abstract: A multiple level integrated circuit uses an array of oppositely oriented individually enabled buffers between through-silicon vias (TSVs) and a clocked flip-flop, for each of multiple signal lines that include TSVs. Applying and/or reading logic levels to and from the TSVs and associated flip-flops produces values that a logic element compares to expected values characterizing nominal operation or detects open and short circuit defects. A process associated with testing the TSVs during assembly comprises testing for short circuits and then exposing and connecting the TSVs via a conductive layer to check for open circuits.
    Type: Grant
    Filed: March 22, 2011
    Date of Patent: May 7, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Sandeep Kumar Goel
  • Publication number: 20130093452
    Abstract: A method of probe card partitioning for testing an integrated circuit die includes providing a first probe card partition layout having a first number of distinct sections. Each distinct section uses a distinct probe card for testing. The first probe card partition layout is repartitioned into a second probe card partition layout having a second number of distinct sections. The second number is less than the first number.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 18, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sandeep Kumar GOEL, Mill-Jer WANG
  • Patent number: 8402404
    Abstract: A system includes an automated place and route tool to generate a layout of an integrated circuit (IC) die based on a gate level circuit description. A machine readable persistent storage medium includes a first portion encoded with a first gate-level description of first and second circuit patterns to be formed on first and second IC dies, respectively, and a second portion encoded with a second gate level description of the plurality of circuit patterns received from the tool. The second gate level description includes power and ground ports, and the first gate level description does not include power and ground ports. A processor-implemented verification module is provided for comparing the first and second gate level descriptions and outputting an error report if the second gate level description has an error. The verification module outputs a verified second gate-level description of the first and second circuit patterns.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: March 19, 2013
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ashok Mehta, Stanley John, Kai-Yuan Ting, Sandeep Kumar Goel, Chao-Yang Yeh
  • Publication number: 20130047046
    Abstract: A 2.5D or 3D test architecture includes a logic die, and a memory die. In the 2.5D architecture, the logic die and memory die are mounted on an interposer. In the 3D architecture, the memory die is mounted on the logic die. The logic die includes a control logic wrapped with a processor wrapper. The processor wrapper enables testing components of the control logic. The memory die is also mounted on the interposer. The memory die includes dynamic random access memory and channel selection/bypass logic. The control logic is coupled to the dynamic random access memory via the channel selection/bypass logic, the channel selection/bypass logic being controlled by the processor wrapper.
    Type: Application
    Filed: May 31, 2012
    Publication date: February 21, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Sandeep Kumar GOEL
  • Publication number: 20130044554
    Abstract: A 2.5D or 3D repair architecture includes a logic die, and a memory die. In the 2.5D architecture, the logic die and memory die are mounted on an interposer. In the 3D architecture, the memory die is mounted on the logic die. The logic has a control logic wrapped with a processor wrapper. The processor wrapper enables testing components of the control logic. The control logic further comprises a wide input/output controller, a built-in-repair analyzer (BIRA), and a repair controller. A method utilizing the repair architecture provides for repairing failed columns and rows of a memory device.
    Type: Application
    Filed: June 5, 2012
    Publication date: February 21, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sandeep Kumar GOEL, Tze-Chiang HUANG