Abstract: A method of testing an integrated circuit die comprises partitioning a first probe card partition layout of the integrated circuit die having one or more sections comprising a first quantity of section types into a second probe card partition layout having a greater quantity of sections comprising a second quantity of section types, the second quantity of section types being less than the first quantity of section types. The method also comprises using one or more probe cards to test the sections in the second probe card partition layout, each of the one or more probe cards having a test contact pattern that corresponds with a test contact pattern of one of each section type included in the second probe card partition layout.

Abstract: A method of forming a wafer on wafer (WOW) stack includes forming a predetermined array of connecting elements on a surface of a first wafer, the first wafer including dies of a first type. The dies of the first type have a first functionality. The method further includes bonding a second wafer to the first wafer using the predetermined array of connecting elements, the second wafer including dies of a second type. The dies of the second type have a separate functionality different from the first functionality. Bonding the second wafer to the first wafer comprises bonding an integer number of dies of the second type to a corresponding die of the first type. A total area of the dies of the second type bonded to the corresponding die of the first type is less than or equal to an area of the corresponding die of the first type.

Abstract: A method performed at least partially by a processor includes performing a test sequence. In the test sequence, a test pattern is loaded into a circuit. The test pattern is configured to cause the circuit to output a predetermined test response. A test response is unloaded from the circuit after a test wait time period has passed since the loading of the test pattern into the circuit. The unloaded test response is compared with the predetermined test response.

Abstract: Systems and methods for circuit fault diagnosis are provided. An original circuit design is evaluated to determine whether the original circuit design is to be modified based at least in part on one or more first faults. In response to the original circuit design being determined not to be modified based at least in part on the one or more first faults, a first test pattern set is automatically generated based at least in part on the original circuit design. The original circuit design is evaluated to determine whether the original circuit design is to be modified based at least in part on the first test pattern set. In response to the original circuit design being determined not to be modified based at least in part on the first test pattern set, fault testing is performed to determine whether the original circuit design fails.

Abstract: A test circuitry for testing an interconnection between interconnected dies includes a cell embedded within one of the dies. The cell includes a selection logic module that includes a first multiplexer configured to receive a first control signal and provide a first output test signal, and a second multiplexer configured to receive a second control signal and provide a second output test signal. The cell includes a scannable data storage module coupled to the first multiplexer; and a transition generation module configured to receive a third control signal; wherein the first and second output test signals are generated based on respective states of the first, second, and third control signals, and wherein the test circuitry is configured to use the first and second output test signals to perform at least two of: a DC test on the interconnection, an AC test on the interconnection, and a burn-in-test on the interconnection.

Abstract: A monolithic stacked integrated circuit (IC) is provided with a known-good-layer (KGL) test circuit. The KGL test circuit includes a scan segment, and a plurality of inputs, outputs, and multiplexers coupled to the scan segment. The KGL test circuit further includes a plurality of control elements such that scan testing of the stacked IC may be conducted on a layer-by-layer basis.

Abstract: A wafer on wafer (WOW) stack includes a first wafer having dies of a first type. The WOW stack further includes a second wafer bonded to the first wafer. The second wafer has dies of a second type. An integer number of dies of the second type are bonded to a corresponding die of the first type. A total area of the dies of the second type bonded to the corresponding die of the first type is less than or equal to an area of the corresponding die of the first type. A functionality of the dies of the first type is different from a functionality of the dies of the second type.

Abstract: A method of detecting one or more faults in a semiconductor device that includes generating a first test pattern set from a primary node list and a fault list. The primary node list includes one or more nodes and the fault list identifies one or more faults. The method also includes generating one or more secondary node lists from the primary node list and generating a second test pattern set from at least the first test pattern set and the secondary node list. Each node of the one or more nodes of the primary node list is associated with a corresponding secondary node list of the one or more secondary node lists.

Abstract: A method of testing interconnected dies can include forming a cell for the interconnected dies, applying at least a first input to the cell to perform an open or short defects test, and applying at least a second input to the cell to perform one or more of a resistive defects test or a burn-in-test. Test circuitry for testing an interconnection between interconnected dies can include a wrapper cell embedded within a die where the wrapper cell includes a scannable data storage element, a hold data module, a selection logic, a transition generation module, and one or more additional input ports for receiving inputs causing the wrapper cell to perform an open or short defects test in a first mode and causing the wrapper cell to perform one or more of a resistive defects test in a second mode or a burn-in-test in a third mode.

Abstract: A method for testing a monolithic stacked integrated circuit (IC) is provided. The method includes receiving a layer of the IC. The layer has a first surface and a second surface, and the layer includes a substrate. The method further includes attaching probe pads to the first surface, and applying a first fault testing to the IC through the probe pads. The method further includes forming another layer of the IC over the second surface, and applying a second fault testing to the IC through the probe pads.

Abstract: An apparatus comprises an integrated circuit and at least one lens. The integrated circuit comprises an image sensor having a light sensing region. The light sensing region is partitioned into sub-regions. The integrated circuit also comprises a processor coupled with and beneath the image sensor. The processor is configured to generate a first processed image based on an image captured by one sub-region, and a second processed image based on another image captured by another sub-region. The first processed image and the second processed image are generated based on a pixel correction process executed by the processor which corrects one or more of the image or the another image based on a predefined light reception factor associated with the sub-regions. The image sensor is configured to receive light via the light sensing region through the at least one lens.

Abstract: A wafer on wafer (WOW) stack includes a first wafer having dies of a first type. The WOW stack further includes a second wafer bonded to the first wafer. The second wafer has dies of a second type. An integer number of dies of the second type are bonded to a corresponding die of the first type. A total area of the dies of the second type bonded to the corresponding die of the first type is less than or equal to an area of the corresponding die of the first type. A functionality of the dies of the first type is different from a functionality of the dies of the second type.

Abstract: A circuit includes a plurality of scan chains arranged in a ring network topology. Each scan chain includes a plurality of scan blocks, each of the plurality of scan blocks including a storage element and a switching device. Each switching device includes a first input configured to receive an output of a storage element in a different scan chain from the scan chain in which the switching device is disposed, and a second input configured to receive one of a function logic signal or a test scan signal. The switching device configured to selectively couple the first input or the second input to an input of the storage element.

Abstract: A method includes receiving a design of an interposer having nets, probe pads, and micro-bumps. The nets connect the micro-bumps. The probe pads are initially unconnected to the nets. The method further includes initializing a first set to logically include the nets; processing the first set such that every net interconnecting more than two micro-bumps is divided into a plurality of nets and every two micro-bumps are interconnected by one net; calculating an untested length for each net in the first set; selecting a net N from the first set wherein the net N has the maximum untested length in the first set, the net N representing at least a portion of a net P of the nets; selecting a pair of probe pads that are unconnected to the nets; and connecting the pair of probe pads to the net P by two dummy nets.

Abstract: A method of detecting one or more faults in a semiconductor device that includes generating one or more secondary node lists from a primary node list. The primary node list includes one or more nodes. Each node of the one or more nodes of the primary node list is associated with a corresponding secondary node list of the one or more secondary node lists. The method also includes generating a test pattern set from the secondary node list and a fault list. The fault list identifies one or more faults.

Abstract: A monolithic stacked integrated circuit (IC) is provided with a known-good-layer (KGL) test circuit and a scan segment in one of its layers. The test circuit includes a plurality of inputs, outputs, and multiplexers coupled to the scan segment and to a second layer of the IC. The test circuit further includes a plurality of control elements such that scan testing of the IC may be conducted on a layer-by-layer basis.

Abstract: A monolithic stacked integrated circuit (IC) is provided with a known-good-layer (KGL) test circuit. The KGL test circuit includes a scan segment, and a plurality of inputs, outputs, and multiplexers coupled to the scan segment. The KGL test circuit further includes a plurality of control elements such that scan testing of the stacked IC may be conducted on a layer-by-layer basis.

Abstract: A method of detecting one or more faults in a semiconductor device that includes generating a first test pattern set from a primary node list and a fault list. The primary node list includes one or more nodes and the fault list identifies one or more faults. The method also includes generating one or more secondary node lists from the primary node list and generating a second test pattern set from at least the first test pattern set and the secondary node list. Each node of the one or more nodes of the primary node list is associated with a corresponding secondary node list of the one or more secondary node lists.

Abstract: A circuit includes a plurality of scan chains each including a plurality of scan blocks. Each scan block includes a storage element and a switching device having an output directly coupled to an input of the storage element. The switching device has a first input configured to receive an output of a storage element in a different scan chain from the scan chain in which the switching device is disposed and a second input configured to receive one of a function logic output signal or a scan input signal. The switching device is configured to selectively couple the first input or the second input to the input of the storage element.

Abstract: Provided is a method of assigning a first set of probe pads to an interposer for maximizing a defect coverage for the interposer. The interposer includes a second set of nets and the defect coverage is based on a ratio between a tested net length and an overall net length. The method includes processing the second set such that every net interconnecting more than two micro-bumps is divided into a plurality of nets and every two of the more than two micro-bumps are interconnected by one of the plurality of nets. The method further includes calculating an untested length of each net in the second set; selecting a first net from the second set with the maximum untested length; selecting two probe pads from the first set based on a user-defined cost function; and connecting the two probe pads to the first net with two dummy nets.