Patents by Inventor Sandra Malhotra
Sandra Malhotra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9178010Abstract: A method for doping a dielectric material by pulsing a first dopant precursor, purging the non-adsorbed precursor, pulsing a second precursor, purging the non-adsorbed precursor, and pulsing a oxidant to form an intermixed layer of two (or more) metal oxide dielectric dopant materials. The method may also be used to form a blocking layer between a bulk dielectric layer and a second electrode layer. The method improves the control of the composition and the control of the uniformity of the dopants throughout the thickness of the doped dielectric material.Type: GrantFiled: December 4, 2012Date of Patent: November 3, 2015Assignee: Intermolecular, Inc.Inventors: Sandra Malhotra, Hanhong Chen, Wim Deweerd, Toshiyuki Hirota, Hiroyuki Ode
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Patent number: 8900422Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.Type: GrantFiled: April 17, 2009Date of Patent: December 2, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Imran Hashim, Indranil De, Tony Chiang, Edward Haywood, Hanhong Chen, Nobi Fuchigami, Pragati Kumar, Sandra Malhotra, Sunil Shanker
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Patent number: 8900418Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.Type: GrantFiled: November 14, 2012Date of Patent: December 2, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Imran Hashim, Hanhong Chen, Tony Chiang, Indranil De, Nobi Fuchigami, Edward Haywood, Pragati Kumar, Sandra Malhotra, Sunil Shanker
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Patent number: 8901708Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.Type: GrantFiled: November 13, 2012Date of Patent: December 2, 2014Assignee: Intermolecular, Inc.Inventors: Imran Hashim, Hanhong Chen, Tony Chiang, Indranil De, Nobumichi Fuchigami, Edward Haywood, Pragati Kumar, Sandra Malhotra, Sunil Shanker
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Patent number: 8828821Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device such as a capacitor and DRAM cell. In particular, a bottom electrode upon which a dielectric layer is to be grown may have a ruthenium-based surface. Lattice matching of the ruthenium surface with the dielectric layer (e.g., titanium oxide, strontium titanate or barium strontium titanate) helps promote the growth of rutile-phase titanium oxide, thereby leading to higher dielectric constant and lower effective oxide thickness. The ruthenium-based material also provides a high work function material, leading to lower leakage. To mitigate nucleation delay associated with the use of ruthenium, an adherence or glue layer based in titanium may be employed. A pretreatment process may be further employed so as to increase effective capacitor plate area, and thus promote even further improvements in dielectric constant and effective oxide thickness (“EOT”).Type: GrantFiled: September 18, 2009Date of Patent: September 9, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Hanhong Chen, Nobumichi Fuchigami, Imran Hashim, Pragati Kumar, Sandra Malhotra, Sunil Shanker
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Patent number: 8829647Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.Type: GrantFiled: January 9, 2013Date of Patent: September 9, 2014Assignee: Intermolecular, Inc.Inventors: Hanhong Chen, Edward Haywood, Sandra Malhotra, Hiroyuki Ode
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Patent number: 8828836Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies.Type: GrantFiled: June 6, 2011Date of Patent: September 9, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Karthik Ramani, Hiroyuki Ode, Sandra Malhotra
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Patent number: 8821795Abstract: A combinatorial screening method and system are provided. The combinatorial system and method provide rapid data generation for characterization of phase change material. The characterization data is collected through a multipoint probe card where multiple regions are characterized in a single annealing cycle.Type: GrantFiled: July 16, 2009Date of Patent: September 2, 2014Assignee: Intermolecular, Inc.Inventors: Imran Hashim, Sandra Malhotra, Ryan Clarke, Sunil Shanker, Yun Wang, Yoram Schwarz
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Patent number: 8815677Abstract: A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.Type: GrantFiled: June 14, 2011Date of Patent: August 26, 2014Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Hanhong Chen, Wim Deweerd, Xiangxin Rui, Sandra Malhotra, Hiroyuki Ode
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Patent number: 8815157Abstract: A combinatorial screening method and system are provided. The combinatorial system and method provide rapid data generation for characterization of phase change material. The characterization data is collected through a multipoint probe card where multiple regions are characterized in a single annealing cycle.Type: GrantFiled: December 21, 2011Date of Patent: August 26, 2014Assignee: Intermolecular, Inc.Inventors: Imran Hashim, Ryan Clarke, Sandra Malhotra, Yoram Schwarz, Sunil Shanker, Yun Wang
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Patent number: 8765570Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin (<2 nm) or highly doped so that it remains amorphous after subsequent anneal treatments. A second dielectric material is formed above the first dielectric material. The second dielectric material is sufficiently thick (>3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.Type: GrantFiled: June 12, 2012Date of Patent: July 1, 2014Assignee: Intermolecular, Inc.Inventors: Sandra Malhotra, Wim Deweerd, Hiroyuki Ode
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Patent number: 8679939Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin (<2 nm) or highly doped so that it remains amorphous after subsequent anneal treatments. A second dielectric material is formed above the first dielectric material. The second dielectric material is sufficiently thick (>3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.Type: GrantFiled: January 9, 2013Date of Patent: March 25, 2014Assignee: Intermolecular, Inc.Inventors: Sandra Malhotra, Wim Y. Deweerd, Hiroyuki Ode
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Publication number: 20140077337Abstract: A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.Type: ApplicationFiled: January 9, 2013Publication date: March 20, 2014Applicant: INTERMOLECULAR, INC.Inventors: Hanhong Chen, Edward Haywood, Sandra Malhotra, Hiroyuki Ode
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Patent number: 8652927Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first electrode structure is comprised of multiple materials. A first material is formed above the substrate. A portion of the first material is etched. A second material is formed above the first material. A portion of the second material is etched. Optionally, the first electrode structure receives an anneal treatment. A dielectric material is formed above the first electrode structure. Optionally, the dielectric material receives an anneal treatment. A second electrode material is formed above the dielectric material. Typically, the capacitor stack receives an anneal treatment.Type: GrantFiled: January 10, 2013Date of Patent: February 18, 2014Assignee: Intermolecular, Inc.Inventors: Sandra Malhotra, Hanhong Chen, Wim Y. Deweerd, Edward L. Haywood, Hiroyuki Ode, Gerald Richardson
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Publication number: 20130330903Abstract: A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin (<m) or highly doped so that it remains amorphous after subsequent anneal treatments. A second dielectric material is formed above the first dielectric material. The second dielectric material is sufficiently thick (>3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.Type: ApplicationFiled: June 12, 2012Publication date: December 12, 2013Applicants: Elpida Memory, Inc., Intermolecular Inc.Inventors: Sandra Malhotra, Wim Deweerd, Ode Hiroyuki
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Patent number: 8574998Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.Type: GrantFiled: December 5, 2011Date of Patent: November 5, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra Malhotra, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui, Takashi Arao, Naonori Fujiwara
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Patent number: 8574985Abstract: Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.Type: GrantFiled: March 3, 2011Date of Patent: November 5, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Xiangxin Rui, Sunil Shanker, Sandra Malhotra, Imran Hashim, Edward Haywood
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Patent number: 8574997Abstract: A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO2?x where x is between 0 and 2, and the physical thickness of the catalytic layer is between about 0.5 nm and about 10 nm, and the dielectric layer is ZrO2.Type: GrantFiled: June 6, 2011Date of Patent: November 5, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Hanhong Chen, Sandra Malhotra, Hiroyuki Ode, Xiangxin Rui
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Patent number: 8563392Abstract: In some embodiments of the present invention, methods are developed wherein a gas flow of an electron donating compound (EDC) is introduced in sequence with a precursor pulse and alters the deposition of the precursor material. In some embodiments, the EDC pulse is introduced sequentially with the precursor pulse with a purge step used to remove the non-adsorbed EDC from the process chamber before the precursor is introduced. In some embodiments, the EDC pulse is introduced using a vapor draw technique or a bubbler technique. In some embodiments, the EDC pulse is introduced in the same gas distribution manifold as the precursor pulse. In some embodiments, the EDC pulse is introduced in a separate gas distribution manifold from the precursor pulse.Type: GrantFiled: December 5, 2011Date of Patent: October 22, 2013Assignees: Intermolecular, Inc., Elpida Memory, Inc.Inventors: Sandra Malhotra, Wim Deweerd, Edward Haywood, Hiroyuki Ode
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Patent number: 8551851Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle.Type: GrantFiled: May 4, 2011Date of Patent: October 8, 2013Assignee: Intermolecular, Inc.Inventors: Hanhong Chen, Pragati Kumar, Sunil Shanker, Edward Haywood, Sandra Malhotra, Imran Hashim, Nobi Fuchigami, Prashant Phatak, Monica Mathur