Patents by Inventor Sang Choon Ko

Sang Choon Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140159547
    Abstract: The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
    Type: Application
    Filed: April 17, 2013
    Publication date: June 12, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon JUN, Sang Choon Ko, Seok-Hwan Moon, Kwang-Seong Choi
  • Patent number: 8723222
    Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: May 13, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Bum Bae, Eun Soo Nam, Jae Kyoung Mun, Sung Bock Kim, Hae Cheon Kim, Chull Won Ju, Sang Choon Ko, Jong-Won Lim, Ho Kyun Ahn, Woo Jin Chang, Young Rak Park
  • Publication number: 20140103539
    Abstract: A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.
    Type: Application
    Filed: September 9, 2013
    Publication date: April 17, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Byoung-Gue MIN, Sang Choon KO, Jong-Won Lim, Hokyun AHN, Hyung Sup YOON, Jae Kyoung MUN, Eun Soo NAM
  • Publication number: 20140097685
    Abstract: The inventive concept relates to a system supplying a constant current direct current power to serial loads connected in series with one another. The inventive concept is constituted by a constant current source power supply unit outputting a predetermined direct current, a load connection unit having the same rated current characteristic as the constant current source, a load connection unit having a rated current characteristic smaller than the constant current source, a load connection unit having a rated current characteristic greater than the constant current source, a load connection unit having a rated current characteristic greater or smaller than the constant current source and a circuit controlling or protecting them.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 10, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Yong il JUN, SANG CHOON KO, Jae Kyoung MUN, Dae Woo LEE, Kyu-Seok LEE, Ho Young KIM, Chul Won JU
  • Patent number: 8664833
    Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: March 4, 2014
    Assignee: Electronics & Telecommunications Research Institute
    Inventors: Sang Choon Ko, Chi Hoon Jun
  • Publication number: 20140054262
    Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.
    Type: Application
    Filed: October 29, 2013
    Publication date: February 27, 2014
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon JUN, Sang Choon KO, Jong Tae MOON
  • Patent number: 8598768
    Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: December 3, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon Jun, Sang Choon Ko, Jong Tae Moon
  • Publication number: 20130069127
    Abstract: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.
    Type: Application
    Filed: July 24, 2012
    Publication date: March 21, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Ho Kyun AHN, Jong-Won Lim, Sung Bum Bae, Sang Choon Ko, Young Rak Park, Woo Jin Chang, Jae Kyoung Mun, Eun Soo Nam, Jeong Jin Kim, Chull Won Ju
  • Publication number: 20130069173
    Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.
    Type: Application
    Filed: August 23, 2012
    Publication date: March 21, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Woo Jin CHANG, Jong Won LIM, Ho Kyun AHN, Sang Choon KO, Sung Bum BAE, Chull Won JU, Young Rak PARK, Jae Kyoung MUN, Eun Soo NAM
  • Publication number: 20130020649
    Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
    Type: Application
    Filed: July 13, 2012
    Publication date: January 24, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung Bum BAE, Eun Soo NAM, Jae Kyoung MUN, Sung Bock KIM, Hae Cheon KIM, Chull Won JU, Sang Choon KO, Jong-Won LIM, Ho Kyun AHN, Woo Jin CHANG, Young Rak PARK
  • Patent number: 8319397
    Abstract: Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: November 27, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sang Choon Ko, Chang Han Je, Ho Jun Ryu, Sung Sik Lee, Chi Hoon Jun
  • Patent number: 8263426
    Abstract: Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed.
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: September 11, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sang Choon Ko, Chi Hoon Jun, Byoung Gon Yu, Chang Auck Choi
  • Publication number: 20120153778
    Abstract: Disclosed is a piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.
    Type: Application
    Filed: December 12, 2011
    Publication date: June 21, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Chi Hoon JUN, Sang Choon KO, Jong Tae MOON
  • Publication number: 20120152028
    Abstract: Disclosed are a slim self-powering power supplier using a flexible PCB for a wireless sensor network and a sensor node using the same, and a fabrication method thereof. An exemplary embodiment of the present disclosure provides a self-powering power supplier including: a flexible PCB; a lower electrode positioned on the flexible PCB; a piezoelectric body having a cantilever structure deposited on the lower electrode; and an upper electrode formed on the piezoelectric body.
    Type: Application
    Filed: November 4, 2011
    Publication date: June 21, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sang Choon KO, Chi Hoon Jun
  • Patent number: 8047074
    Abstract: Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: November 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon Jun, Sang Choon Ko, Chang Auck Choi, Byoung Gon Yu
  • Patent number: 7963147
    Abstract: Provided are a micro gas sensor for measuring a gas concentration configured to achieve a high heating and cooling rate of a gas sensitive layer, achieve temperature uniformity, and achieve durability against thermal impact and mechanical impact; and a method for manufacturing the micro gas sensor. The micro gas sensor includes: a vacuum cavity disposed in a substrate; a support layer covering the vacuum cavity; a sealing layer sealing the support layer and the vacuum cavity; a micro heater disposed on the sealing layer; a plurality of electrodes disposed on the micro heater, insulated from the micro heater; and a gas sensitive layer covering the electrodes.
    Type: Grant
    Filed: December 6, 2007
    Date of Patent: June 21, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chi-Hoon Jun, Sang-Choon Ko, Hyeon-Bong Pyo, Seon-Hee Park
  • Publication number: 20110140578
    Abstract: Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.
    Type: Application
    Filed: August 24, 2010
    Publication date: June 16, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sang Choon Ko, Chang Han Je, Ho Jun Ryu, Sung Sik Lee, Chi Hoon Jun
  • Patent number: 7879629
    Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: February 1, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sang-Choon Ko, Chi-Hoon Jun, Hyeon-Bong Pyo, Seon-Hee Park
  • Patent number: 7861575
    Abstract: A micro gas sensor is disclosed including a substrate; an open cavity formed in the substrate; an electrode pad separation groove formed on the substrate; a first and a second electrode pads formed over the substrate and electrically insulated from each other by the electrode pad separation groove; a micro heater connected to the first electrode pad and configured of a bridge structure suspended over the open cavity; a first sensing electrode extending from the first electrode pad and suspended over the open cavity; a second sensing electrode extending from the first electrode pad and suspended over the open cavity; and a gas sensing film electrically coupled to the micro heater and filling a gap between the first and the second sensing electrodes.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: January 4, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon Jun, Sang Choon Ko, Moon Youn Jung, Seon Hee Park
  • Publication number: 20100147070
    Abstract: Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.
    Type: Application
    Filed: November 12, 2009
    Publication date: June 17, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon JUN, Sang Choon Ko, Chang Auck Choi, Byoung Gon Yu