Patents by Inventor Sang Heon Han
Sang Heon Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942762Abstract: A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.Type: GrantFiled: April 4, 2019Date of Patent: March 26, 2024Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Jeong Sik Lee, Sang Heon Han, Keun Uk Park, Yeo Jae Yoon
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Patent number: 11870419Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.Type: GrantFiled: April 5, 2021Date of Patent: January 9, 2024Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sang Uk Son, Tae Yoon Kim, Chang Hyun Lim, Sang Heon Han, Jong Beom Kim
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Publication number: 20230266465Abstract: A distance measuring camera disclosed to an embodiment includes an image sensor, a light source, a first lens portion including a plurality of lenses disposed on the light source, and a driving member for moving the light source or the first lens portion in at least one direction of first and second directions perpendicular to an optical axis of the first lens portion, wherein output light emitted from the light source passes through the first lens portion and form a field of illumination (FOI) region including a plurality of dot patterns arranged in two-dimension in a region spaced apart from the first lens portion, wherein the driving member controls a position of the FOI region to be located in first or second region, wherein when the driving member moves the position of the FOI region from the first region to the second region, a first dot pattern located at one end of the plurality of dot patterns is moved outward relative to the first region than a second dot pattern located at the other end of the plurType: ApplicationFiled: July 29, 2021Publication date: August 24, 2023Applicant: LG INNOTEK CO., LTD.Inventors: Gwui Youn PARK, Jae Hoon LEE, Sang Heon HAN
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Publication number: 20230176136Abstract: A battery life prediction apparatus including a storing unit storing a plurality of pieces of power pattern data used in an actual site, a pattern generating unit generating a test pattern for predicting a life of a battery based on the power pattern data, and a life predicting unit predicting a residual life of the battery based on the test pattern.Type: ApplicationFiled: August 9, 2021Publication date: June 8, 2023Applicant: LG ENERGY SOLUTION, LTD.Inventors: Su Bin SON, Jeong Seok PARK, Jong Soo LEE, Hyun Chul AHN, Sang Heon HAN
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Publication number: 20230170872Abstract: A bulk-acoustic wave resonator includes a substrate, a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in this order on the substrate, and a seed layer disposed below the first electrode, wherein the resonance portion includes an active portion disposed in a central portion of the resonance portion, and a lateral resonance suppressing portion disposed to surround the active portion, wherein a thickness distribution of the seed layer, the first electrode, the piezoelectric layer, and the second electrode in the lateral resonance suppressing portion is different from a thickness distribution in the active portion.Type: ApplicationFiled: August 17, 2022Publication date: June 1, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Heon HAN, Sang Uk SON
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Publication number: 20230132771Abstract: A surface-emitting laser device disclosed in an embodiment of the invention includes a first region in which a plurality of first emitters is arranged; and a second region in which a plurality of second emitters is arranged, an area of the second region is smaller than an area of the first region, and the second region is disposed in a center region of the first region, and the first emitter and the second emitter may be driven separately.Type: ApplicationFiled: March 17, 2021Publication date: May 4, 2023Applicant: LG INNOTEK CO., LTD.Inventors: Sang Heon HAN, Kang Yeol PARK, Jae Hoon LEE, Yong Gyeong LEE
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Publication number: 20230087049Abstract: A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.Type: ApplicationFiled: March 8, 2022Publication date: March 23, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Kyung LEE, Sang Heon HAN, Kwang Su KIM, Sung Joon PARK, Jae Goon AUM
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Publication number: 20230078421Abstract: According to an embodiment of the present invention, disclosed is a camera apparatus comprising: a substrate; a light emitting part; a light receiving part comprising an image sensor located on the substrate; and a controller that controls the optical part or the light source using an output value received from a photodetector, wherein the light emitting part comprises: a light source located on the substrate; a holder located on the substrate; an optical part located on the light source; a driving part that moves the optical part along an optical axis; and the photodetector located on the substrate.Type: ApplicationFiled: March 2, 2021Publication date: March 16, 2023Applicant: LG INNOTEK CO., LTD.Inventors: Sang Heon HAN, Bum Jin KIM, Seok Hyun KIM, In Jun SEO, Myung Jin SONG, Jae Hoon LEE
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Publication number: 20230072892Abstract: A radio frequency (RF) extractor includes: a first bandpass filter electrically connected between a shared antenna port and a first RF port, disposed in a first chip, and having a first passband; a second bandpass filter electrically connected between the shared antenna port and a second RF port, and disposed in a second chip, and having a second passband; a first notch filter electrically connected to the shared antenna port, disposed in the first chip, and having a first stopband partially overlapping the first passband; and a second notch filter electrically connected to the shared antenna port, disposed in the second chip, and having a second stopband partially overlapping the second passband.Type: ApplicationFiled: February 11, 2022Publication date: March 9, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sung Tae KIM, Bo Hyun SEO, Tae Seok KO, Sang Heon HAN
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Patent number: 11595022Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.Type: GrantFiled: June 11, 2020Date of Patent: February 28, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sung Wook Kim, Dae Hun Jeong, Sang Uk Son, Sang Heon Han, Jeong Hoon Ryou
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Publication number: 20230022838Abstract: An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.Type: ApplicationFiled: January 20, 2022Publication date: January 26, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Heon HAN, Won HAN, Tae Hun LEE, Chang Hyun LIM, Ran Hee SHIN
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Patent number: 11558025Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.Type: GrantFiled: October 20, 2020Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jeong Hoon Ryou, Sang Uk Son, Sung Wook Kim, Won Han, Dae Hun Jeong, Sang Heon Han
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Patent number: 11558027Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.Type: GrantFiled: March 25, 2019Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sung Wook Kim, Sang Uk Son, Sang Heon Han, Won Han
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Patent number: 11558026Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.Type: GrantFiled: May 15, 2020Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Sang Heon Han, Ran Hee Shin, Jin Suk Son
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Publication number: 20220407492Abstract: A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.Type: ApplicationFiled: October 6, 2021Publication date: December 22, 2022Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Heon HAN, Won HAN, Chang Hyun LIM, Sung Joon PARK, Jae Goon AUM
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Publication number: 20220399874Abstract: An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.Type: ApplicationFiled: October 27, 2021Publication date: December 15, 2022Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Kyung LEE, Sang Heon HAN, Hwa Sun LEE, Jae Goon AUM, Sung HAN
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Publication number: 20220239278Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(?0.59*F)] is [[ln{0.008 (?m)2}]/{?0.59*(3.5 GHz)}] or more and [[ln{0.022 (?m)2}]/{?0.59*(3.5 GHz)}] or less.Type: ApplicationFiled: May 4, 2021Publication date: July 28, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Uk Son, Sung Wook Kim, Won Han, Jong Woon Kim, Jeong Hoon Ryou, Sang Heon Han
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Publication number: 20220149806Abstract: A bulk acoustic wave resonator includes: a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a protective layer disposed on an upper surface of the resonant portion. The protective layer includes: a first protective layer formed of a diamond thin film; and a second protective layer stacked on the first protective layer, and formed of a dielectric material.Type: ApplicationFiled: April 9, 2021Publication date: May 12, 2022Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Tae Kyung LEE, Sang Heon HAN, Sung Joon PARK, Sang Kee YOON, Sang Hyun YI, Jae Goon AUM
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Publication number: 20220116016Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.Type: ApplicationFiled: April 5, 2021Publication date: April 14, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Sang Uk SON, Tae Yoon KIM, Chang Hyun LIM, Sang Heon HAN, Jong Beom KIM
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Publication number: 20210320644Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.Type: ApplicationFiled: October 20, 2020Publication date: October 14, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Jeong Hoon RYOU, Sang Uk SON, Sung Wook KIM, Won HAN, Dae Hun JEONG, Sang Heon HAN