Patents by Inventor Sang Heon Han
Sang Heon Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210159672Abstract: An embodiment relates to a surface-emitting laser device and a light-emitting device including same. A surface-emitting laser device according to the embodiment can include: a first reflective layer; an active area disposed on the first reflective layer; an aperture area disposed on the active area; and a second reflective layer disposed on the aperture area. The second reflective layer can include: a first AlGaAs-based layer comprising Alx1Ga(1-x1)As (wherein 0<X1<0.2); a second AlGaAs-based layer disposed on the first AlGaAs-based layer and comprising Alx2Ga(1-x2)As (wherein 0.8<X2<1.0); and an AlGaAs-based transition area disposed between the first AlGaAs-based layer and the second AlGaAs-based layer. The AlGaAs-based transition area can include: a third AlGaAs-based layer comprising Alx3Ga(1-x3)As (wherein 0<X3<0.2); and a fourth AlGaAs-based layer comprising Alx4Ga(1-x4)As (wherein 0.8<X4<1.0).Type: ApplicationFiled: June 28, 2019Publication date: May 27, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Jeong Sik LEE, Sang Heon HAN, Keun Uk PARK, Yeo Jae YOON
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Publication number: 20210119599Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.Type: ApplicationFiled: May 15, 2020Publication date: April 22, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung LEE, Sang Heon HAN, Ran Hee SHIN, Jin Suk SON
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Publication number: 20210036683Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.Type: ApplicationFiled: June 11, 2020Publication date: February 4, 2021Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Won HAN, Sung Wook KIM, Dae Hun JEONG, Sang Uk SON, Sang Heon HAN, Jeong Hoon RYOU
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Publication number: 20210028603Abstract: A surface-emitting laser device according to an embodiment comprises: a first electrode; a substrate arranged on the first electrode; a first reflection layer arranged on the substrate; an active region arranged on the first reflection layer and including a cavity; an opening region arranged on the active region and including an aperture and an insulation region; a second reflection layer arranged on the opening region; a second electrode arranged on the second reflection layer; and a delta doping layer arranged in the opening region. The thickness of the insulation region becomes thinner in the direction of the aperture, and the delta doping layer can be arranged at the aperture.Type: ApplicationFiled: April 4, 2019Publication date: January 28, 2021Inventors: Jeong Sik LEE, Sang Heon HAN, Keun Uk PARK, Yeo Jae YOON
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Publication number: 20200052674Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.Type: ApplicationFiled: March 25, 2019Publication date: February 13, 2020Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun JEONG, Sung Wook KIM, Sang Uk SON, Sang Heon HAN, Won HAN
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Patent number: 10304990Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: GrantFiled: November 2, 2016Date of Patent: May 28, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Dong Yul Lee, Seung Hyun Kim, Jang Mi Kim, Suk Ho Yoon, Sang Jun Lee
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Publication number: 20170077346Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: ApplicationFiled: November 2, 2016Publication date: March 16, 2017Inventors: Sang Heon HAN, Dong Yul LEE, Seung Hyun KIM, Jang Mi KIM, Suk Ho YOON, Sang Jun LEE
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Patent number: 9564316Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.Type: GrantFiled: December 22, 2014Date of Patent: February 7, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Yul Lee, Sang Heon Han, Seung Hyun Kim, Jang Mi Kim, William Solari, Hyun Wook Shim, Suk Ho Yoon
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Patent number: 9502605Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: GrantFiled: May 15, 2015Date of Patent: November 22, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Dong Yul Lee, Seung Hyun Kim, Jang Mi Kim, Suk Ho Yoon, Sang Jun Lee
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Patent number: 9362447Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.Type: GrantFiled: October 7, 2014Date of Patent: June 7, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Hyun Lee, Sang Heon Han, Suk Ho Yoon, Jae Sung Hyun
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Publication number: 20160099378Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.Type: ApplicationFiled: May 15, 2015Publication date: April 7, 2016Inventors: Sang Heon HAN, Dong Yul LEE, Seung Hyun KIM, Jang Mi KIM, Suk Ho YOON, Sang Jun LEE
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Publication number: 20150311062Abstract: A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.Type: ApplicationFiled: December 22, 2014Publication date: October 29, 2015Inventors: Dong Yul LEE, Sang Heon HAN, Seung Hyun KIM, Jang Mi KIM, William SOLARI, Hyun Wook SHIM, Suk Ho YOON
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Patent number: 9166098Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: GrantFiled: December 18, 2008Date of Patent: October 20, 2015Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and TechnologyInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Publication number: 20150240358Abstract: There is provided a susceptor. The susceptor includes: a body having a first surface, a second surface opposite the first surface, and an outer side surface connecting the first surface and the second surface; at least one pocket recessed from the first surface to accommodate at least one wafer therein, respectively; at least one tunnel respectively located below the pocket and extending from a center of the body to the outer side surface; at least one connecting channel each of which connects each of the pocket to each of the tunnel; and a supply line connected to the tunnel at the center of the body and supplying a gas from an outside in order for the gas to flow from the center of the body to the outer side surface.Type: ApplicationFiled: October 3, 2014Publication date: August 27, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nam Sung KIM, Jong Won JANG, Sung Min CHOI, Sang Heon HAN, Suk Ho YOON, Jeong Wook LEE
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Publication number: 20150200332Abstract: There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.Type: ApplicationFiled: October 7, 2014Publication date: July 16, 2015Inventors: Jong Hyun LEE, Sang Heon HAN, Suk Ho YOON, Jae Sung HYUN
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Patent number: 9018618Abstract: There is provided a semiconductor light emitting device including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, and including a plurality of alternately stacked quantum barrier layers and quantum well layers, wherein at least a portion of the plurality of quantum well layers has different thicknesses, wherein a thickness of a first quantum well layer most adjacent to the p-type semiconductor layer is less than a thickness of a second quantum well layer adjacent thereto and greater than a thickness of a third quantum well layer, other than the first and second quantum well layers.Type: GrantFiled: October 28, 2014Date of Patent: April 28, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong Hyun Lee, Ki Ho Park, Suk Ho Yoon, Sang Heon Han, Jae Sung Hyun
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Publication number: 20140235007Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.Type: ApplicationFiled: January 2, 2014Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon HAN, Nam Sung KIM, Dong Joon KIM, Kong Tan SA, Tong Ik SHIN, Do Young RHEE, Jeong Wook LEE
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Publication number: 20140224176Abstract: A metal-organic chemical vapor deposition (MOCVD) apparatus includes: a reaction chamber including a chamber main body forming an interior space having a certain volume and a chamber cover hermetically sealing the chamber main body to maintain air-tightness; a susceptor rotatably provided within the chamber main body and having one or more accommodation portions formed in an upper surface thereto to accommodate wafers; a cover member detachably provided on an interior surface of the chamber cover, forming a reaction space between the cover member and the susceptor, and formed by coupling a plurality of section members; and a gas supply unit supplying a reactive gas to the reaction space to allow the reactive gas to flow between the susceptor and the cover member.Type: ApplicationFiled: August 9, 2011Publication date: August 14, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do Young Rhee, Young Sun Kim, Sung Tae Kim, Sang Heon Han, Ki Sung Kim
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Patent number: 8779412Abstract: There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.Type: GrantFiled: July 19, 2012Date of Patent: July 15, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Do Young Rhee, Jong Hyun Lee, Jin Young Lim, Young Sun Kim
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Publication number: 20140191192Abstract: There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.Type: ApplicationFiled: July 29, 2011Publication date: July 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon Han, Hyun Wook Shim, Je Won Kim, Chu Young Cho, Seong Ju Park, Sung Tae Kim, Jin Tae Kim, Yong Chun Kim, Sang Jun Lee