Patents by Inventor Sang Heon Han
Sang Heon Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140175474Abstract: A method of manufacturing a semiconductor light emitting device, includes: forming a plurality of concave portions on a substrate; injecting silica particles into the plurality of concave portions; and forming a semiconductor layer on the substrate, the semiconductor layer including voids formed in portions of the semiconductor layer, the portions being located above the plurality of concave portions.Type: ApplicationFiled: August 15, 2013Publication date: June 26, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon HAN, Jong Pa HONG, Seung Hyun KIM, Yun Hee SHIN, Jeong Wook LEE
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Patent number: 8748866Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.Type: GrantFiled: January 3, 2013Date of Patent: June 10, 2014Assignee: Samsung Electronics Co., LtdInventors: Jong Hyun Lee, Sang Heon Han, Jin Young Lim, Young Sun Kim
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Publication number: 20140131726Abstract: There are provided a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device includes a base layer configured of a group III nitride semiconductor, a polarity modifying layer formed on a group III element polar surface of the base layer, and a light emitting laminate having a multilayer structure of the group III nitride semiconductor formed on the polarity modifying layer, an upper surface of at least one layer in the multilayer structure being formed of an N polar surface.Type: ApplicationFiled: August 23, 2013Publication date: May 15, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Don LEE, Jong Uk SEO, Sang Heon HAN
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Patent number: 8716694Abstract: A semiconductor light emitting device includes: n-type and p-type semiconductor layers; and an active layer disposed between the n-type and p-type semiconductor layers. The active layer has a structure in which a plurality of quantum well layers and a plurality of quantum barrier layers are alternately disposed, wherein the plurality of quantum well layers are made of AlxInyGa1-x-yN (0?x<1, 0<y?1) and each of the plurality of quantum well layers contains a different indium (In) content. And, among the plurality of quantum barrier layers, a quantum barrier layer adjacent to a quantum well layer having a higher indium (In) content is thicker than a quantum barrier layer adjacent to a quantum well layer having a lower indium (In) content.Type: GrantFiled: December 6, 2012Date of Patent: May 6, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Jeong Wook Lee, Jae Sung Hyun, Jin Young Lim, Dong Joon Kim, Young Sun Kim
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Publication number: 20140103359Abstract: A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.Type: ApplicationFiled: July 28, 2011Publication date: April 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Wook Shim, Sang Heon Han, Jae Woong Han, Dong Chul Shin, Je Won Kim, Dong Ju Lee
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Patent number: 8575593Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.Type: GrantFiled: July 25, 2012Date of Patent: November 5, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Jong Hyun Lee, Jin Young Lim, Dong Ju Lee, Heon Ho Lee, Young Sun Kim, Sung Tae Kim
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Publication number: 20130228747Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.Type: ApplicationFiled: April 2, 2013Publication date: September 5, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Heon HAN, Joo Young CHEON, Je Won KIM, Dong Ju LEE, Dong Chul SHIN, Hyun Wook SHIM, Jae Woong HAN
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Publication number: 20130026446Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.Type: ApplicationFiled: July 25, 2012Publication date: January 31, 2013Inventors: Sang Heon HAN, Jong Hyun Lee, Jin Young Lim, Dong Ju Lee, Heon Ho Lee, Young Sun Kim, Sung Tae Kim
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Publication number: 20130020553Abstract: There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.Type: ApplicationFiled: July 19, 2012Publication date: January 24, 2013Applicant: Samsung Electronics Co., Ltd.Inventors: Sang Heon Han, Do Young Rhee, Jong Hyun Lee, Jin Young Lim, Young Sun Kim
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Publication number: 20120164347Abstract: Provided are a susceptor for a chemical vapor deposition (CVD) apparatus, including: a susceptor body having an upper surface opposed to a lower surface thereof and formed of a light transmitting material, the upper surface thereof having at least one pocket part formed to receive a substrate therein; and a light absorbing unit formed of a light absorbing material on the upper surface of the susceptor body.Type: ApplicationFiled: December 20, 2011Publication date: June 28, 2012Inventors: Do Young RHEE, Jin Young Lim, Sang Heon Han, Ki Sung Kim, Young Sun Kim, Sung Tae Kim
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Publication number: 20120160157Abstract: There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved.Type: ApplicationFiled: August 12, 2011Publication date: June 28, 2012Inventors: Sang Heon HAN, Do Young Rhee, Jin Young Lim, Ki Sung Kim, Young Sun Kim
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Publication number: 20110121259Abstract: There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.Type: ApplicationFiled: October 12, 2010Publication date: May 26, 2011Inventors: Sang Heon HAN, Joo Young CHEON, Je Won KIM, Dong Ju LEE, Dong Chul SHIN, Hyun Wook SHIM, Jae Woong HAN
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Patent number: 7888670Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.Type: GrantFiled: April 14, 2008Date of Patent: February 15, 2011Assignee: Samsung LED Co., Ltd.Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
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Publication number: 20100019223Abstract: There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.Type: ApplicationFiled: December 18, 2008Publication date: January 28, 2010Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Won Kang, Seong Ju Park, Min Ki Kwon, Sang Jun Lee, Joo Young Cho, Yong Chun Kim, Sang Heon Han, Dong Ju Lee, Jeong Tak Oh, Je Won Kim
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Patent number: 7462876Abstract: Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.Type: GrantFiled: October 23, 2006Date of Patent: December 9, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Heon Han, Bang Won Oh, Je Won Kim, Hyun Wook Shim, Joong Seo Kang, Dong Ju Lee
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Publication number: 20080251781Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.Type: ApplicationFiled: April 14, 2008Publication date: October 16, 2008Inventors: Sang Heon Han, Sang Won Kang, Jeong Tak Oh, Seung Beom Seo, Dong Joon Kim, Hyun Wook Shim
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Patent number: 7393710Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.Type: GrantFiled: October 11, 2005Date of Patent: July 1, 2008Assignee: Samsung Electro-Mechanics Co., LtdInventors: Jin Chul Kim, Su Yeol Lee, Chang Zoo Kim, Sang Heon Han, Keun Man Song, Tae Jun Kim, Seok Beom Choi
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Publication number: 20070145406Abstract: Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.Type: ApplicationFiled: October 23, 2006Publication date: June 28, 2007Inventors: Sang Heon Han, Bang Won Oh, Je Won Kim, Hyun Wook Shim, Joong Seo Kang, Dong Ju Lee
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Patent number: 7192884Abstract: Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size.Type: GrantFiled: October 22, 2003Date of Patent: March 20, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dong Joon Kim, Byung Deuk Moon, Sang Heon Han
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Publication number: 20040262259Abstract: Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ridge structure by selectively etching the second conductive-type clad layer; (c) forming a current blocking layer around the ridge structure, the current blocking layer having protrusions on the upper surface thereof adjacent to the ridge structure, and an amorphous and/or polycrystalline layer on a partial area thereof; and (d) removing at least the amorphous and/or polycrystalline layer from the current blocking layer, and wet-etching the upper surface of the current blocking layer so that the protrusions are reduced in size;Type: ApplicationFiled: October 22, 2003Publication date: December 30, 2004Inventors: Dong Joon Kim, Byung Deuk Moon, Sang Heon Han