Patents by Inventor Sang-Il Jung
Sang-Il Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090027529Abstract: An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.Type: ApplicationFiled: July 14, 2008Publication date: January 29, 2009Inventors: Sang-Il Jung, Min-Young Jung
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Publication number: 20090008688Abstract: Unit pixels, image sensors and methods for fabricating the image sensor are provided. A unit pixel includes: a photodiode for accumulating photocharges; a floating diffusion region for detecting the photocharges accumulated in the photodiode; a reset element for periodically resetting the floating diffusion region; a drive element for amplifying the photocharges accumulated in the floating diffusion region; a selection element for selecting the unit pixel; and a silicide layer formed on top surfaces of the transfer gate. The photocharges are transferred to the floating diffusion region via a transfer gate.Type: ApplicationFiled: June 20, 2008Publication date: January 8, 2009Inventors: Young-Hoon Park, Sang-Il Jung
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Publication number: 20080315273Abstract: An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.Type: ApplicationFiled: September 11, 2008Publication date: December 25, 2008Inventor: SANG-IL JUNG
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Patent number: 7459328Abstract: An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.Type: GrantFiled: February 12, 2008Date of Patent: December 2, 2008Assignee: Samsung Electronics Co., Ltd.Inventor: Sang-Il Jung
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Publication number: 20080211945Abstract: An image sensor includes a first sub-pixel, a second sub-pixel, and an image processor. The first sub-pixel generates a first image signal with a first sensitivity, and the second sub-pixel generates a second image signal with a second sensitivity less than the first sensitivity. The image signal processor adds a change in the second image signal from a saturation level to the first image signal to generate a final image signal when the first sub-pixel is saturated.Type: ApplicationFiled: January 4, 2008Publication date: September 4, 2008Inventors: Jong-Wook Hong, Chan Park, Sang-Il Jung
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Patent number: 7397100Abstract: An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.Type: GrantFiled: August 2, 2005Date of Patent: July 8, 2008Assignee: Samsung Electronics Co., Ltd.Inventor: Sang-Il Jung
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Publication number: 20080131990Abstract: An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.Type: ApplicationFiled: February 12, 2008Publication date: June 5, 2008Inventor: Sang-IL JUNG
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Publication number: 20080102551Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.Type: ApplicationFiled: December 26, 2007Publication date: May 1, 2008Inventors: Young-Hoon Park, Sang-Il Jung
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Patent number: 7277949Abstract: A method of controlling the operation of a mobile terminal having a multimedia data service capability is disclosed. The method initially includes establishing a call connection to a base station if a multimedia data service request is made by a mobile terminal user to receive multimedia data. Upon establishing the call connection, the mobile terminal sends a multimedia data service request signal to a base station and receives the corresponding multimedia data for a first predetermined period of time. Then, it disconnects the call connection and stops providing electric power to a signal receiving/transmitting part of the terminal after receiving a confirmation signal responding to the play-back period it has calculated earlier. Finally, it plays-back the received data for the play-back period. By using the present invention, an unnecessary connection fee can be eliminated, and the power being supplied to the mobile terminal while playing-back the data can be efficiently saved.Type: GrantFiled: December 13, 2001Date of Patent: October 2, 2007Assignee: LG Electronics Inc.Inventor: Sang Il Jung
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Publication number: 20070161140Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.Type: ApplicationFiled: January 10, 2007Publication date: July 12, 2007Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
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Publication number: 20070075337Abstract: Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.Type: ApplicationFiled: September 28, 2006Publication date: April 5, 2007Inventors: Sang-Il Jung, Duk-Min Yi
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Publication number: 20070037405Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: February 15, 2007Inventors: Jong-Chae Kim, Duk-Min Yi, Sang-Il Jung, Jong-Wook Hong
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Publication number: 20060231870Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.Type: ApplicationFiled: June 5, 2006Publication date: October 19, 2006Inventors: Young-Hoon Park, Sang-Il Jung
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Publication number: 20060141661Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.Type: ApplicationFiled: February 22, 2006Publication date: June 29, 2006Inventors: Young-Hoon Park, Sang-Il Jung
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Patent number: 7057219Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.Type: GrantFiled: June 13, 2003Date of Patent: June 6, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Hoon Park, Sang-Il Jung
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Publication number: 20060027844Abstract: An image sensor for minimizing a dark level defect is disclosed. The image sensor includes an isolation layer formed on a substrate. A field region and an active region are defined on the substrate by the isolation layer. A photodiode is formed in the image sensor in such a structure that a first region is formed below a surface of the substrate in the active region and a second region is formed under the first region. A first conductive type impurity is implanted into the first region and a second conductive type impurity is implanted into the second region. A dark current suppressor is formed on side and bottom surfaces of the isolation layer adjacent to the first region, and the dark current suppressor is doped with the second conductive type impurity. The dark current suppressor suppresses the dark current to minimize the dark level defect caused by the dark current.Type: ApplicationFiled: August 2, 2005Publication date: February 9, 2006Inventor: Sang-Il Jung
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Patent number: 6767366Abstract: The present invention discloses a prosthetic implant and an insertion instrument for inserting the prosthetic implant between adjacent vertebrae. The prosthetic implant in accordance with the present invention includes a housing for being packed with bone chips, an inserting hole formed at a first end of the housing, through which an insertion instrument can be inserted, and a connection recess formed on inner surface of the housing around the inserting hole, on which the insertion instrument is stably placed. The insertion instrument in accordance with the present invention includes a connection member having a connection chip at a first end, a rotating means for rotating and returning the connection member at a predetermined angle. In accordance with the present invention, the insertion instrument can be separated from the prosthetic implant by rotation of only one time after the prosthetic implanted is completely inserted, so that the operation process of implanting the prosthetic implant is easy and safe.Type: GrantFiled: February 12, 2002Date of Patent: July 27, 2004Assignees: Solco Biomedical Co., Ltd.Inventors: Choon Sung Lee, Seayoung Ahn, Sang Soo Park, Sang Il Jung, Jin Yong Lim, Jin Soon Kim
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Publication number: 20040046193Abstract: A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.Type: ApplicationFiled: June 13, 2003Publication date: March 11, 2004Applicant: Samsung Electronics Co., Inc.Inventors: Young-Hoon Park, Sang-Il Jung
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Patent number: 6686259Abstract: In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.Type: GrantFiled: November 27, 2001Date of Patent: February 3, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-sik Park, Mikio Takagi, Jae-heon Choi, Sang-il Jung, Jun-taek Lee
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Publication number: 20030114931Abstract: The present invention discloses a prosthetic implant and an insertion instrument for inserting the prosthetic implant between adjacent vertebrae. The prosthetic implant in accordance with the present invention includes a housing for being packed with bone chips, an inserting hole formed at a first end of the housing, through which an insertion instrument can be inserted, and a connection recess formed on inner surface of the housing around the inserting hole, on which the insertion instrument is stably placed. The insertion instrument in accordance with the present invention includes a connection member having a connection chip at a first end, a rotating means for rotating and returning the connection member at a predetermined angle. In accordance with the present invention, the insertion instrument can be separated from the prosthetic implant by rotation of only one time after the prosthetic implanted is completely inserted, so that the operation process of implanting the prosthetic implant is easy and safe.Type: ApplicationFiled: February 12, 2002Publication date: June 19, 2003Inventors: Choon Sung Lee, Seayoung Ahn, Sang Soo Park, Sang Il Jung, Jin Yong Lim, Jin Soon Kim