Abstract: A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area.

Abstract: A fusion cage adapted for promoting fusion of bone grafts or bone substitutes packed in the fusion cage with the adjoining vertebrae, wherein the fusion cage has a shape of cylindrical closed U of which upper and lower ends are opened such that an internal cavity is defined by a plane rear wall, both sidewalls, and a rounded front wall. An upper and lower ends of each sidewall are roundly swollen so as to secure enough contact with an upper and lower surfaces of the adjoined vertebrae.

Abstract: Frequency matching method and apparatus to automatically adjust the frequency of a communication signal received by a mobile system are provided. The apparatus comprises: a baseband unit for changing frequency of a signal received through an antenna and providing an output signal; a control unit for recognizing one or more frequency characteristics of the output signal and applying a control voltage in accordance with the respective frequency characteristics; a matching unit connected to the antenna for changing the signal frequency according to the control voltage; and a memory in which control voltage values for the respective frequency characteristics are stored. Accordingly, signal gain is optimized in correspondence with the respective frequency characteristics and thereby signal reception and transmission are improved.

Abstract: Method for displaying an available time according to battery capacity in a mobile station, including the steps of (1) forming relations between current consumption(mA) of the mobile station both in a standby mode and a call mode and a strength of a received signal into tables, and storing the tables in a memory respectively, (2) measuring a battery voltage for calculating a remained amount of battery capacity(mAh), (3) measuring a strength of a received signal, and reading current consumption(mA) both in the standby mode and in the call mode corresponding to the measured strength of the received signal, (4) dividing the remained amount of the battery capacity(Mah) by respective current consumption to calculate an available standby time and an available call time, and (5) displaying the available standby time and/or the available call time, whereby enhancing an efficiency of use of the mobile station because available time of use of the mobile station can be known with easy, and a time when the battery should

Abstract: A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area.

Abstract: In a method for manufacturing a solid state image pick up device capable of improving gettering efficiency a semiconductor substrate having a front side on which a solid state image pick-up device may be formed, and a rear side opposite to the front side is provided. Subsequently, a polysilicon layer including impurities for gettering having a predetermined concentration is formed on the rear side of the semiconductor substrate. Next, a predetermined thickness of the polysilicon layer including the impurities for gettering is oxidized, and the impurities for gettering are condensed into the reduced polysilicon layer.

Abstract: A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area.

Abstract: A method of controlling the operation of a mobile terminal having a multimedia data service capability is disclosed. The method initially includes establishing a call connection to a base station if a multimedia data service request is made by a mobile terminal user to receive multimedia data. Upon establishing the call connection, the mobile terminal sends a multimedia data service request signal to a base station and receives the corresponding multimedia data for a first predetermined period of time. Then, it disconnects the call connection and stops providing electric power to a signal receiving/transmitting part of the terminal after receiving a confirmation signal responding to the play-back period it has calculated earlier. Finally, it plays-back the received data for the play-back period. By using the present invention, an unnecessary connection fee can be eliminated, and the power being supplied to the mobile terminal while playing-back the data can be efficiently saved.

Abstract: A solid state pickup apparatus is described, which can weaken a dark current. The pickup apparatus includes an optical shield layer with a number of windows corresponding to the light receiving parts, and a negative voltage applying device. Each of the light receiving parts has a solid state pickup device where an P-type diode layer is formed between an N-type diode layer and a gate insulating layer. The negative voltage applying device is formed at the optical shield layer in order to apply a negative voltage to the P-type diode layer.

Abstract: A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area.

Abstract: A smear noise eradication method in a charge-coupled device (CCD) type camera comprises the steps of inputting respective image signals from one pair of CCD image pick-up devices whose lengthwise directions of corresponding vertical CCDs are perpendicularly disposed with respect to each other, and which are installed on an optical path, and eradicating smear noise after comparing the one pair of image signals according to corresponding pixels. Using the one pair of CCD image pick-up devices, the image signals of the CCD image pick-up devices are compared with each other. When the smear noise is generated, it is eradicated to obtain a high quality image signal.