Abstract: Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent.

Abstract: The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching apparatus may include: a work piece positioning step of positioning a work piece close to a surface of a cathode unit, facing an anode unit; a bidirectional voltage source applying step of applying a voltage to the cathode unit, the voltage having a polarity alternating between a positive voltage and a negative voltage with time; and an etching step of etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit.

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: A dry etching device which can be used to etch products or used in processes regardless of materials and exhibits an excellent accuracy, and a method for controlling the same. The dry etching device includes: an anode part; a cathode part disposed at an upper side of the anode part and facing the anode part, receiving bi-directional voltage power in which polarity of a voltage alternates between a positive voltage and a negative voltage depending on time, and spaced apart from the anode part; a leveling part disposed in close contact with a surface of the cathode part facing the anode part, and for positioning a work-piece in a flat state; a holding part for holding the work-piece and the leveling part to the surface of the cathode part facing the anode part; and a bi-directional voltage power supplier for applying the bi-directional voltage power to the cathode part.

Abstract: An anti-reflective hardmask composition contains: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent.

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

Abstract: The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching apparatus may include: a work piece positioning step of positioning a work piece close to a surface of a cathode unit, facing an anode unit; a bidirectional voltage source applying step of applying a voltage to the cathode unit, the voltage having a polarity alternating between a positive voltage and a negative voltage with time; and an etching step of etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit.

Abstract: An anti-reflective hardmask composition is provided.

Abstract: An organic light-emitting device with a sealing layer covering a light-emitting diode, wherein the sealing layer comprises n number of sealing units, each comprising a sequential stack of an organic film and an inorganic film, wherein n is an integer of 1 or greater and a method of manufacturing the same.

Abstract: An anti-reflective hardmask composition is provided.

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract: In an aspect, a substrate for a display device that includes a plastic substrate and a planarization layer is provided.

Abstract: In an image sensor, a photoelectric convertor is arranged in an active region of substrate and a floating diffusion area is arranged over the photoelectric convertor. A transfer transistor transfers the photo charges to the floating diffusion area from the photoelectric convertor and the transfer gate electrode has a narrow upper structure that extends downwards vertically from the top surface of the substrate and a broad lower structure that is connected to the upper structure and has a width greater than a width of the upper structure. A reading device is on the top surface of the substrate and detects the photo charges from the floating diffusion area. Accordingly, the effective gate length of the transfer gate electrode is increased, and thus, high resolution image data can be obtained in spite of the size reduction of the image sensor.

Abstract: A mobile phone system having an application processing function is physically separated into a network data processing device and an application data processing device. Here, the network data processing device configured to process data for voice calls and data calls is placed in one small and light-weight device, the application data processing device configured to perform a high-quality user interface and high-quality applications is placed in another device, and communication between the two devices is defined.

Abstract: A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.