Abstract: A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

Abstract: A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.

Abstract: A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.

Abstract: Disclosed is an image projecting apparatus having a cooling device, which cools heat generated from a plurality of light sources respectively emitting light of different colors and heat generated from a display device simultaneously, while effectively dispersing the heat. The image projecting apparatus includes a projecting system which projects light; a display device disposed in series with the projecting system; an optical system disposed in parallel with the projecting system, and including a plurality of light sources which transmit the light to the display device and generate heat when the light is transmitted to the display device; a heat dissipation device disposed at an outer edge of the optical system which dissipates the heat generated from the plurality of light sources; and a cooling fan disposed opposite to the display device, which inhales air and discharges the air to the heat dissipation device.

Abstract: Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a metal compound, the metal compound including metal with no more than a divalence and a metal compound having anions, a solid electrolyte layer formed on the first electrode, and a second electrode formed on the solid electrolyte layer.

Abstract: A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are provided. The polymer used as a top coating layer covering (or formed on) a photoresist may include a specific chemical structure. The top coating composition may include a solvent and a polymer of having the specific chemical structure. The immersion lithography process includes forming a photoresist layer on a wafer, forming a top coating layer on the photoresist layer, immersing the wafer in water, performing an exposure process on the photoresist layer and forming a photoresist pattern by removing the top coating layer and the photoresist layer with a developer.

Abstract: A photosensitive polymer for a photoresist and a photoresist composition having the same are provided. The photosensitive polymer for a photoresist includes the repeating unit represented by the formula below: wherein R1 is a C1-C20 hydrocarbon group or a C1-C20 hetero hydrocarbon group including at least one hetero atom selected from the group consisting of nitrogen, fluorine and sulfur.

Abstract: Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.

Abstract: A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer.

Abstract: Provided is a substrate for an oligomer probe array to which a photolabile material having an acetylene derivative is directly attached or attached via a linker.

Abstract: A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

Abstract: A (meth)acrylate compound having an aromatic acid-labile group, the (meth)acrylate compound being represented by the following Formula 1: In Formula 1, R1 is hydrogen or methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, R3 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl, or a substituted or unsubstituted aryl having from two to four fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR.

Abstract: A photosensitive polymer, the photosensitive polymer including repeating units represented by Formulae 1 to 3: wherein R1 and R3 are independently hydrogen or methyl, R2 is a C4 to C20 acid-labile group, R4 is a lactone-derived group, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, carbon CAR is bonded directly to an aromatic ring of AR, l, m, and n are positive integers, 1/(l+m+n) is about 0.1 to about 0.5, m/(l+m+n) is about 0.3 to about 0.5, and n/(l+m+n) is about 0.1 to 0.4.

Abstract: An aromatic (meth)acrylate compound having an ?-hydroxy, the aromatic (meth)acrylate compound being represented by the following Formula 1: In Formula 1, R1 is hydrogen or a methyl, R2 is hydrogen, a substituted or unsubstituted alkyl, or a substituted or unsubstituted aryl, AR is a substituted or unsubstituted phenyl ring, or a substituted or unsubstituted aryl having from two to three fused aromatic rings, and carbon CAR is bonded directly to an aromatic ring of AR, R and R? are independently hydrogen or an alkyl, and X is an integer ranging from 1 to 6.

Abstract: In one embodiment, a semiconductor device comprises a base and a tapered wall formed on the base. The wall has a midline and also has an inner sidewall and an outer sidewall. The inner sidewall and the outer sidewall are substantially symmetrical with each other in relation to the midline. Thus, the reliability of the semiconductor capacitor structure can be improved and the throughput can be increased. Also, further scaling down of semiconductor devices can be facilitated with the principles of the present invention.

Abstract: Aqueous cleaning solutions are provided for cleaning an integrated circuit device formed on a wafer, as well as methods of cleaning a wafer using the aqueous cleaning solution. In one aspect, an aqueous cleaning solution includes a low foam surfactant, a metal corrosion inhibitor, an acidic pH control agent or an alkali pH control agent, and water.

Abstract: At least three length varying means, mounted between an upper end of a strut and a vehicle body, change the position of the strut in relation to the vehicle body, thereby enabling active adjustment of the camber, caster, and vehicle height.

Abstract: An apparatus and a method of communicating a set of user data in an ATM network-based mobile communication system are disclosed. To transmit the set of user data, N internal AAL packets are generated by adding an internal AAL packet header to each of N data subsets of an original set of user data. The internal AAL packet header includes a sequence number of each data subset. Next, one or more internal AAL cells are generated by multiplexing the internal AAL packets. Then, the original set of user data is restored by demultiplexing the internal AAL packets, included in the internal AAL cells. Thereafter, M AAL2 packets are generated by adding an AAL2 packet header to each of M data subsets of the restored set of user data. And finally, one or more AAL2 cells are generated by multiplexing the AAL2 packets. As a result, the set of user data is transmitted in the system in a much more efficient manner. Therefore, the data traffic rate in each part of the system is greatly enhanced.

Abstract: A nonvolatile variable resistance memory device may include a lower electrode; a stacked structure including a first Cu compound layer disposed on the lower electrode, and a second Cu compound layer disposed on the first Cu compound layer; and an upper electrode disposed on the second Cu compound layer.

Abstract: A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.