Abstract: A photomask including chromium patterns divided into two groups in such a fashion that the chromium patterns in one of the two chromium pattern groups alternate, one by one, with the chromium patterns in the other chromium pattern group, the chromium patterns being formed on two quartz substrate for the two chromium pattern groups, respectively, to prepare for the photomask, two separate photomasks each having an increased space defined between adjacent chromium patterns thereof so as to avoid a severe diffraction of light passing between the adjacent chromium patterns. A method for forming micro patterns of a semiconductor device using the photomask is also disclosed.

Abstract: A multi-use holder of a particle inspection device and an inspection method using the same can inspect both a wafer and a photomask using a scattering type inspection device since the scattering of a laser light irradiated from a light source can be avoided by fabricating the multi-use holder in a wafer shape, providing a second mounting portion and a first mounting portion on the upper surface thereof and forming a coating portion on the upper surface of the multi-use holder thereon when disposing the multi-use holder on a chuck fixed to a supporter by a vacuum generator, thereby reducing costs and improving productivity.

Abstract: Disclosed is a photomask including chromium patterns divided into two groups in such a fashion that the chromium patterns in one of the two chromium pattern groups alternate, one by one, with the chromium patterns in the other chromium pattern group, the chromium patterns being formed on two quartz substrate for the two chromium pattern groups, respectively, to prepare, for the photomask, two separate photomasks each having an increased space defined between adjacent chromium patterns thereof so as to avoid a severe diffraction of light passing between the adjacent chromium patterns. A method for forming micro patterns of a semiconductor device using the photomask is also disclosed.

Abstract: A photomask including chromium patterns divided into two groups in such a fashion that the chromium patterns in one of the two chromium pattern groups alternate, one by one, with the chromium patterns in the other chromium pattern group, the chromium patterns being formed on two quartz substrate for the two chromium pattern groups, respectively, to prepare for the photomask, two separate photomasks each having an increased space defined between adjacent chromium patterns thereof so as to avoid a severe diffraction of light passing between the adjacent chromium patterns. A method for forming micro patterns of a semiconductor device using the photomask is also disclosed.

Abstract: The present invention is directed to prevent generating repair by-products during a repair process of a phase shift mask, and defects on a quartz substrate. According to the present invention, a repair method for phase shift mask in a semiconductor device so as to remove a bridge formed between a phase shift layer on a quartz substrate, comprises the steps of: first repairing the bridge by implanting a charging ion according to a focused ion beam(“FIB”) method; and second repairing the first repaired bridge portion by emitting laser and then removing the bridge.

Abstract: A method for forming micro patterns of a semiconductor device which is capable of forming, on a semiconductor substrate, accurate micro patterns having a dimension smaller than the resolution of a stepper as used.

Abstract: A method for forming resist patterns having two photoresist layers and an intermediate layer involves coating a primary photoresist film having a small thickness over an under layer, and exposing the primary photoresist film to light using a mask. Then, the primary photoresist film is developed, thereby forming a primary photoresist film pattern. An intermediate layer is formed over the entire exposed surface of a resulting structure, the intermediate layer being made of a spin on glass or plasma enhancement oxide. A secondary photoresist film is coated over the intermediate layer. The secondary photoresist film is exposed to light using the same mask as used for the primary photoresist film, and is developed to form a secondary photoresist pattern. A portion of the intermediate layer exposed through the secondary photoresist pattern is etched, forming a secondary photoresist pattern completely overlapping with the primary photoresist pattern so that the resulting resist pattern has a vertical profile.

Abstract: A method for forming fine patterns of a semiconductor device is disclosed and comprises the steps of: providing a semiconductor substrate; forming on the semiconductor substrate an objective layer to be etched; forming an intermediate layer over the objective layer; forming a first photoresist film over the intermediate layer; selectively exposing the first photoresist film through to a first exposure mask to light and create first photoresist patterns and thermally treating the first photoresist patterns; selectively etching the intermediate film to form intermediate patterns with the first photoresist patterns serving as a mask; forming a second photoresist film over the resulting structure; and selectively exposing the second photoresist film through a second exposure mask to light in such a manner that unexposed parts of the second photoresist film are partially overlapped with the first photoresist patterns, so as to form second photoresist patterns, whereby a significant improvement is brought into dept

Abstract: A method for detecting microscopic differences in the thickness of a photoresist film coated on a wafer through naked eyes, which is capable of accurately controlling the critical dimension of the photoresist film patterns even in devices of 256 M DRAM or more and allows the yield to be analyzed with accuracy, comprising the steps of: subjecting the photoresist film to thermal treatment at a low temperature, to make some low molecular weight compounds or solvent molecules to remain within the photoresist film; forming a special material layer over the photoresist film within a certain thickness; and executing high-temperature thermal treatment, to gush up the remaining low-molecular weight compounds or solvent molecules from the photoresist film through relative thin parts of the special material layer.

Abstract: A method for forming accurate micro patterns having a micro dimension smaller than the resolution of a stepper used on a semiconductor substrate, thereby achieving an improvement in the integration degree of the semiconductor device which is ultimately produced.

Abstract: A phase shift mask including two phase shift film patterns formed on one or both surfaces of a transparent substrate such that their optical paths overlap with each other. On one of the phase shift film patterns, a phase shift film pattern having a space size smaller than that of the associated phase shift film pattern is formed, so that three phase shifts of light can be generated with reference to the phase shift film pattern, thereby causing an interference among adjacent light beams. Such a light interference results in an improvement in the image contrast and an increase in the gradient of the light intensity graph. As a result, it is possible to achieve an easy fabrication of micro patterns and an improvement in the process margin, operation reliability and process yield. The invention also provides a method for fabricating such a phase shift mask.

Abstract: There are disclosed a bipolar alignment mark structure for semiconductor device and a process for forming the same. The bipolar alignment mark structure comprises: a semiconductor substrate having a scribe region for defining a integrated circuit region; a plurality of negatively polar alignment marks having a form of trench which are aligned on the scribe region regularly distant from one another; and a plurality of positively polar alignment marks having a form of column which are aligned in such a way that they alternate with the negatively polar alignment marks. A step generated in the structure is more enlarged, which allows easy and accurate measurement of alignment mark. Based on this ease, the structure gives convenience to the fabrication process for a semiconductor device, along with high yield. In addition, the accuracy in measuring alignment mark can bring about an effect that the semiconductor device is improved in reliability.

Abstract: A magnification measuring mark for measuring magnification compensation and correction values of multilayer patterns to be formed for a semiconductor device. The magnification measuring mark includes an inner box and a pair of measuring patterns respectively arranged on the left and right of the inner box or above and below the inner box. The measuring patterns are adapted to measure a pattern misalignment in X and Y axes. One of the measuring patterns is set as a reference measuring pattern for measuring a magnification of the other pattern not set as the reference measuring pattern.

Abstract: A phase shift mask capable of improving the profile of a photoresist film pattern to be formed, thereby achieving an easy formation of micro patterns to fabricate highly-integrated semiconductor devices, and a method for forming the phase shift mask. The phase shift mask includes a transparent substrate, a light shield film pattern formed on the transparent substrate, the light shield film pattern having alternately-arranged lines and spaces respectively having desired dimensions, a first phase shift film pattern formed on the light shield film pattern and provided with alternately-arranged lines and spaces, the first phase shift film pattern having a larger line width than that of the light shield film pattern, and a second phase shift film pattern formed on a portion of the transparent substrate occupied by the spaces of the first phase shift film pattern.

Abstract: A method for fabricating word lines of a semiconductor device, advantageous in that the word lines are easy to form, the process allowance for the neighboring patterns is sufficiently secured and thereby enhances the process yield and reliability of device operation. In an asymmetric memory unit cell structure having a T- or Z-shaped active region, the distortion of the word lines, attributable to the diffused reflection occurring at the boundary of an element isolation oxide film, is compensated by shifting the opposite word lines up and/or down a distance as long as the distortion is caused by the diffused reflection at the slant part of an active region. As a result, the center of the word line coincides with that of contact.

Abstract: A method for forming a resist pattern by coating a primary photoresist pattern having a small thickness and then coating a secondary photoresist pattern over the primary photoresist pattern. Alternatively, the resist pattern is formed by coating a primary photoresist film, exposing the primary photoresist film to light to define a light-exposed region in the primary photoresist film, coating a secondary photoresist film over the primary photoresist film, exposing the secondary photoresist film to light to define a light-exposed region in the secondary photoresist film, and developing the resulting structure to form primary and secondary resist patterns. The method achieves an improvement in the contrast of light, thereby obtaining a resist pattern having a vertical profile.

Abstract: A method for inspecting process defects occurring in a semiconductor device, which utilizes the phenomenon that even when photo shield film patterns are used, patterns of an etchable layer have different dimensions at different positions in a field region. A first etchable layer is patterned using positive photoresist film patterns. A second etchable layer is then patterned using negative photoresist film patterns formed by use of the same light exposure mask used for the positive photoresist film patterns. The second etchable layer patterns have a dimension larger than the first etchable layer patterns on one side of the field region, thereby exhibiting low reflection. On the other side of the field region, the first etchable layer patterns are partially exposed, thereby generating high reflection. Based on the result of the detection, the defect inspection device measures positions, density and dimensions of the first etchable layer patterns having different critical dimensions at different positions.

Abstract: A method for inspecting process defects occurring in a semiconductor device, which utilizes the phenomenon that even when photo shield film patterns are used, patterns of an etchable layer have different dimensions at different positions in a field region. A first etchable layer is patterned using positive photoresist film patterns. Patterns of a negative photoresist film is then formed on the first etchable layer under the condition in which the substrate is misaligned from the light exposure mask by a distance corresponding to either "(n+1/2).times.pitch"or "(n+1/4).times.pitch" (n: a natural number) upon conducting a secondary light exposure for the formation of those patterns. The first etchable layer is then patterned using the negative photoresist film patterns in the form of remaining layers. The defect inspection device measures positions, density and dimensions of the remaining layer portions of the first etchable layer.

Abstract: A method for inspecting process defects occurring in a semiconductor device, which involves forming positive and negative-type etchable layer patterns on a semiconductor wafer by use of positive photoresist film patterns and negative photoresist film patterns respectively formed on adjacent dies, detecting the difference in dimension between corresponding patterns on adjacent dies in a die-to-die comparison manner by a defect inspection device, and compensating for the light exposure mask used in the pattern formation based on the result of the detection, thereby reducing the difference in critical dimension of patterns in each field of the light exposure mask due to the proximity effect, the topology of the wafer, the difference in thickness of thin films on the wafer, and the aberration of the lens as used.

Abstract: A photo mask capable of reducing the time taken to carry out a process margin test and a method for performing a process margin test using the photo mask. The method includes the steps of preparing a wafer, coating a photoresist film over the wafer, performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern, and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test.