Abstract: A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

Abstract: A wafer carrier is provided. The wafer carrier includes a storage holding member for storing a plurality of wafers and includes a plurality of open portions. The wafer carrier further includes a front fixing plate and a rear fixing plate disposed at a front and a rear end of the storage holding member, respectively. The front and rear fixing plates each face a side of at least one of the plurality of wafers. Moreover, left and right edges of the plurality of wafers stored in the storage holding member are exposed by the plurality of open portions.

Abstract: In a method and an apparatus for inspecting defects on a substrate using a light beam, a light source irradiates light beams having different wavelengths onto the substrate. A detector detects first lights scattered from a surface of the substrate and second lights scattered from impurities on the substrate by irradiation of the light beams. An operation unit compares first intensities of the first lights with second intensities of the second lights in order to produce differential values therebetween, and selects a wavelength corresponding to a maximum value of the differential values. An inspection process for inspecting the defects on the substrate is performed using a light beam having the selected wavelength.

Abstract: A method of forming a thin film is provided. The method includes introducing an organometallic compound represented by the following formula onto a substrate; wherein M represents a metal in listed in Group 4A of the periodic table of elements, R1, R2 and R3 independently represent hydrogen or an alkyl group having a carbon number from 1 to 5, and X represents hydrogen or an alkyl group having a carbon number from 1 to 5 and then chemisorbing a portion of the organometallic compound on the substrate. The method further includes removing a non-chemisorbed portion of the organometallic compound from the substrate, providing an oxidizing agent onto the substrate and forming a thin film including a metal oxide on the substrate by chemically reacting the oxidizing agent with a metal in the organometallic compound and by separating ligands of the organometallic compound.

Abstract: In one embodiment, a sample of chemical solution is provided. A first optical property of the sample is detected at a first wavelength and an expected optical property is predicted at a second wavelength, using the first optical property. A second optical property of the sample is detected at the second wavelength. The second optical property is compared with the expected optical property to measure a contamination level of a particular contaminant in the sample.

Abstract: Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

Abstract: In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

Abstract: A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract: Grating forming the floor of a clean room minimizes turbulence and enhances the rate at which air is discharged therethrough. The grate includes a base plate having a plurality of through-holes. Each of the through-holes includes a receiving portion through which the air is received and an exhausting portion through which the air is exhausted. The cross-sectional area of the receiving decreases toward the exhausting portion, and the cross-sectional area of the exhausting portion decreases toward the receiving portion.

Abstract: In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Abstract: Monitoring metal contamination of a rinsing solution may include providing a sample of the rinsing solution, and mixing the sample of the rinsing solution with a monitoring reagent to provide a monitoring mixture. A property of the monitoring mixture that is dependent on a concentration of a metal in the rinsing solution may then be measured. More particularly, the property of the monitoring mixture may be an absorbency of the monitoring mixture with respect to electromagnetic radiation transmitted through the monitoring mixture. Related systems and reagents are also discussed.

Abstract: A substrate measuring apparatus includes a reference value storage unit, an electron irradiator, a current measuring device, and a property value calculating device. The reference value storage unit stores data on the relationship between current flow in a sample substrate with a contact hole of known characteristics that is irradiated by an electron beam. The current measuring device measures current flow in a test substrate. The property value calculating device calculates the property value of the contact hole formed in a material layer of the test substrate using the current flow in the test substrate and the data stored in the reference value storage unit. The property values of the contact hole may be a surface area of underlying substrate exposed by a contact hole or an amount of residual material remaining in the contact hole.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

Abstract: Electron-beam generators have wide area and directional beam generation capability. The generators include anode and cathode electrodes, which are disposed in spaced-apart and opposing relationship relative to each other. A clustered carbon nanotube array is provided to support the wide area and directional beam generation. The clustered nanotube array extends between the anode and cathode electrodes. The nanotube array also has a wide area emission surface thereon, which extends opposite a primary surface of the anode electrode. The clustered nanotube array is configured so that nanotubes therein provide conductive channels for electrons, which pass from the cathode electrode to the anode electrode via the emission surface.

Abstract: In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images.

Abstract: A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.