Abstract: A method for fabricating a capacitor in a semiconductor device includes forming a stack structure providing a plurality of open regions, the stack structure including an insulation layer and a hard mask pattern, forming a conductive layer over the stack structure and in the open regions, etching a portion of the conductive layer formed outside the open regions to form bottom electrodes in the open regions, removing the hard mask pattern, and etching upper portions of the bottom electrodes that are exposed after the hard mask pattern is removed.

Abstract: A method for forming a contact hole of a semiconductor device includes: forming a lower pattern over a substrate; forming a spin-on-glass (SOG) layer over the lower pattern; performing a first curing process on the SOG layer; forming an opening exposing a portion of the SOG layer; performing a second curing process on the SOG layer corresponding to a lower portion of the opening; and forming a contact hole exposing the lower pattern.

Abstract: In one embodiment of the invention, a method for a charge pump is disclosed. The method includes biasing a plurality of transistors; switching a pair of main transistor switches to apply or remove a net charge on an output terminal though the biased transistors; and turning on auxiliary transistor switches when the main transistor switches are turned off. The auxiliary transistor switches when turned on provide an auxiliary equalizing path to nodes between the main transistor switches and the biased transistors. The auxiliary equalizing path equalizes voltages between the intermediate nodes to rapidly turn off the biased transistors and reduce noise on the output terminal of the charge pump.

Abstract: A circuit which selects a supply voltage from a plurality of voltage supplies is presented. The circuit includes a first transistor configured to select a first voltage supply, a second transistor configured to select a second voltage supply, a first parasitic current inhibitor coupled the first transistor, the first voltage supply, and the second voltage supply, where the first parasitic current inhibitor automatically utilizes the voltage supply providing the highest voltage for preventing a substrate current from flowing through a bulk node of the first transistor, and a second parasitic current inhibitor coupled the second transistor, the first voltage supply, and the second voltage supply, where the second parasitic current inhibitor automatically utilizes the voltage supply providing the highest voltage for preventing a substrate current from flowing through a bulk node of the second transistor.

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an insulation layer over the substrate, forming a photoresist pattern for a contact hole over the insulation layer, wherein the photoresist pattern includes an opening having a critical dimension (CD) greater than a desired contact CD, forming a contact hole by selectively etching the insulation layer using the photoresist pattern, and forming a spacer on a sidewall of the contact hole until a CD of the contact hole whose sidewall is covered by the spacer is reduced to a desired contact CD.

Abstract: A method for fabricating a capacitor in a semiconductor device includes forming a stack structure providing a plurality of open regions, the stack structure including an insulation layer and a hard mask pattern, forming a conductive layer over the stack structure and in the open regions, etching a portion of the conductive layer formed outside the open regions to form bottom electrodes in the open regions, removing the hard mask pattern, and etching upper portions of the bottom electrodes that are exposed after the hard mask pattern is removed.

Abstract: A method for forming a contact hole of a semiconductor device includes: forming a lower pattern over a substrate; forming a spin-on-glass (SOG) layer over the lower pattern; performing a first curing process on the SOG layer; forming an opening exposing a portion of the SOG layer; performing a second curing process on the SOG layer corresponding to a lower portion of the opening; and forming a contact hole exposing the lower pattern.

Abstract: A system and method are disclosed for configuring a frequency synthesizer in a transceiver. Configuring a frequency synthesizer in a transceiver includes specifying a selection bit sequence wherein the selection bit sequence corresponds to a predetermined combination of transceiver characteristics; determining a plurality of synthesizer configuration parameters using the selection bit sequence; and configuring the frequency synthesizer using the plurality of synthesizer configuration parameters.

Abstract: A fractional-N frequency synthesizer includes a voltage-controlled oscillator, a dual-modulus divider which divides an output frequency of the voltage-controlled oscillator according to a fractional control input, and a phase comparator which compares a phase of an output of the dual-modulus divider with a phase of a reference frequency, where an output of the phase comparator controls an input of the voltage-controlled oscillator. The synthesizer further includes a sigma-delta modulator which has a single-bit output, and a bit converter which converts the single-bit output of the sigma-delta modulator to the fractional control input applied to the dual-modulus divider.

Abstract: A sigma delta modulator system and a method for modulating a signal are described. The sigma delta modulator includes a plurality of cascading stages, an output coupled to the plurality of the cascading stages via a plurality of feedback connections, and a feedforward connection coupled between a selected one of the plurality of cascading stages and a point closer to the output interface of the sigma delta modulator.

Abstract: An input buffer circuit includes a first amplifier having low load impedance and a second amplifier having high load impedance. The output signals of the input buffer circuit have wide bandwidth, although the input buffer circuit has two stage amplifiers. In addition, the bandwidth can be controlled by resistors as an equivalent active inductance of the input buffer circuit. Further, the input buffer circuit can reduce the power consumption compared with conventional input buffer circuits, since the input buffer circuit according to the present invention uses a first switching current of the first amplifier as well as a second switching current of the second amplifier to load output signals.

Abstract: An input buffer circuit includes a first amplifier having low load impedance and a second amplifier having high load impedance. The output signals of the input buffer circuit have wide bandwidth, although the input buffer circuit has two stage amplifiers. In addition, the bandwidth can be controlled by resistors as an equivalent active inductance of the input buffer circuit. Further, the input buffer circuit can reduce the power consumption compared with conventional input buffer circuits, since the input buffer circuit according to the present invention uses a first switching current of the first amplifier as well as a second switching current of the second amplifier to load output signals.

Abstract: A power-on reset circuit is provided for generating a power-on reset signal for sequential logics or memory devices as a power supply potential is applied initially. The power-on reset circuit is provided in the same chip as the sequential logics, and generates the signal after an adjustable time interval. The power-on reset circuit includes an oscillator for generating a clock signal, and a counter for counting pulses of the clock signal from when the power supply potential is applied. The time interval is adjusted by loading a preset data value in the counter, which thus outputs a CTR signal when the counted pulses become equal in number to the preset number. A combinational logic circuit resets the counter when the power supply potential is initially applied, and also generates a power-on reset signal when the counter outputs the CTR signal. The power on reset signal further disables the counter, so that the CTR signal is maintained.

Abstract: Disclosed is a heat exchanger for an indoor unit of an air conditioner being easier to make and having an improved efficiency of heat exchange by enlarging an area of the heat exchanger, which makes contact with air in a room. The heat exchanger for the indoor unit of the air conditioner comprises a first fin assembly for absorbing a heat from air in a room, a second fin assembly which is adjacent to an upper portion of the first fin assembly and spaced by a predetermined distance with respect to the first fin assembly, for absorbing a heat from air in the room, a plurality of refrigerant pipes which extend through the first fin assembly and the second fin assembly, for supplying a pathway for refrigerant, and a connecting member for connecting the first fin assembly and the second fin assembly with each other so that the second fin assembly is secured to the first fin assembly.