Abstract: A semiconductor memory device includes a memory cell part including a main memory unit and a redundancy memory unit, a page buffer circuit including a plurality of page buffer groups and reading data stored in the memory cell part, and a sensing circuit including a plurality of sense amplifiers corresponding to the plurality of page buffer groups, respectively, and suitable for sensing the read data, wherein the plurality of sense amplifiers perform data sensing operations in parallel in order to sense the read data.

Abstract: Provided is a semiconductor memory device that may efficiently map an internal address used inside the semiconductor memory device in response to an external address that is applied from the outside of the semiconductor memory device. The semiconductor memory device may include a memory cell array configured to include a first main cell array, a first spare cell array, a second main cell array, and a second spare cell array each of which has internal cells that are selected in response to an internal address, and an address mapping unit configured to map external address as the internal address when the external address designates the first main and spare cell arrays, and to operate calculation with a given value and the external address and to map the calculation result value as the internal address when the external address designates the second main and spare cell arrays.

Abstract: A data transmission circuit may include data line groups and pass sections arranged among the data line groups to allow the data line groups to form one line. The data transmission circuit may include an input/output unit configured to be coupled to the data line groups and to process write data to be transmitted to the data line groups or read data transmitted from the data line groups. The data transmission circuit may include a pass control unit configured to selectively enable the pass sections in response to an address for specifying a target data line group of the data line groups.

Abstract: A semiconductor memory device includes a memory cell part including a main memory unit and a redundancy memory unit, a page buffer circuit including a plurality of page buffer groups and reading data stored in the memory cell part, and a sensing circuit including a plurality of sense amplifiers corresponding to the plurality of page buffer groups, respectively, and suitable for sensing the read data, wherein the plurality of sense amplifiers perform data sensing operations in parallel in order to sense the read data.

Abstract: A semiconductor memory device includes a plurality of data buffering units corresponding to a data line, wherein the data buffering units include a first data buffering unit suitable for latching data stored in a memory cell in a data read operation, and second data buffering units, an output unit suitable for outputting the data latched in the first data buffering unit, and a control block suitable for controlling a current path to be formed between the second data buffering units and the output unit in the data read operation.

Abstract: An operating method of a semiconductor device includes applying a read voltage to a selected word line of a selected memory block, among a plurality of memory blocks including cell strings coupled between bit lines and a source line, detecting a voltage of the source line by forming a channel in cell strings of the selected memory block, comparing the voltage of the source line with a reference voltage corresponding to the selected memory block, and performing a least significant bit (LSB) read operation on memory cells coupled to the selected word line when the voltage of the source line is greater than the reference voltage, as a result of the comparing, and performing a most significant bit (MSB) read operation on the memory cells when the voltage of the source line is less than the reference voltage, as the result of the comparing.

Abstract: A voltage conversion circuit may include a first reference voltage generation block configured to be provided with an external voltage, and generate a first reference voltage; a second reference voltage generation block configured to be provided with the external voltage and generate a second reference voltage according to a standby trim code; a trim code generation block configured to generate the standby trim code according to levels of the first reference voltage and the second reference voltage; and an internal voltage generation block configured to select the first reference voltage or the second reference voltage as a determined reference voltage according to an operation mode of a semiconductor memory apparatus, and to generate an internal voltage from the external voltage.

Abstract: A semiconductor apparatus includes an input/output pad configured to exchange signals with an external device; a control pad configured to be inputted with a discharge signal from the external device; and a first electrostatic protection unit configured to form an electrostatic discharge path from the input/output pad to a first voltage supply line according to the discharge signal.

Abstract: A voltage conversion circuit may include a first reference voltage generation block configured to be provided with an external voltage, and generate a first reference voltage; a second reference voltage generation block configured to be provided with the external voltage and generate a second reference voltage according to a standby trim code; a trim code generation block configured to generate the standby trim code according to levels of the first reference voltage and the second reference voltage; and an internal voltage generation block configured to select the first reference voltage or the second reference voltage as a determined reference voltage according to an operation mode of a semiconductor memory apparatus, and to generate an internal voltage from the external voltage.

Abstract: A semiconductor device comprises a memory block having a content addressable memory (CAM) cell array storing data for internal operation conditions, and a memory cell array. The semiconductor device also comprises a page buffer to program data in the memory block or read the data programmed in the memory block; a control logic to activate a reset enable signal for initializing the page buffer during a reset operation and output the activated reset enable signal; and a power-supply controller to output a reset control signal for initializing the page buffer when the reset enable signal is activated, and provide a page buffer power-supply signal to the page buffer. The power-supply controller provides the page buffer power-supply signal after initialization of the page buffer.

Abstract: A method includes performing a pre-reading on memory cells selected from a plurality of memory cells according to a pre-read voltage and determining whether the selected memory cells each are read as a first logical value or a second logical value, comparing a number of memory cells read as the first logical value among the selected memory cells with a predetermined number, and when the number of selected memory cells read as the first logical value is smaller than the predetermined number, performing a first main reading of the selected memory cells, the first main reading adapted to read a memory cell that stores multiple bits.

Abstract: A fail address detector includes cam latch groups configured to store fail addresses and a comparing section connected to the cam latch groups in common and configured to detect whether or not a fail address corresponding to a comparison address exists among the fail addresses received from the cam latch groups. The cam latch groups share the comparing section in time division.

Abstract: A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a first memory unit and a plurality of second memory unit, each including a plurality of memory cells and page buffers corresponding to the memory cells, and a redundancy memory unit including a plurality of redundancy memory cells and a plurality of redundancy page buffers corresponding to the redundancy memory cells. First input/output (I/O) data lines coupled to the first memory unit and second I/O data lines coupled to the second memory unit are coupled to the redundancy memory unit.

Abstract: A semiconductor device includes a memory array including memory cells, page buffers suitable for reading data from the memory cells, cache latch circuits suitable for latching read data from the page buffers, and transmitting latched data to data lines in response to a column selection signal, a column selector suitable for outputting the column selection signal to the cache latch circuits through column selection lines in response to a column address, and sense amplifiers suitable for outputting transmitted data of the data lines by sensing voltages of the data lines, in which the cache latch circuits are connected to the column selector and the sense amplifiers through the column selection lines and the data lines, respectively, and have inverse relationship between the column selection lines and the data lines in length.

Abstract: A data transfer circuit includes a plurality of first lines, a second line suitable for receiving data from a first line selected among the first lines, a third line suitable for transferring data to the first line selected among the first lines, a plurality of driving units, each suitable for driving the second line based on the data from the corresponding first line in a first operation, and a plurality of connection units, each suitable for coupling the third line to the corresponding first line when the corresponding first line is selected in a second operation.

Abstract: A semiconductor device includes a memory block including memory cells coupled to bit lines, read/write circuits each including cache latch suitable for temporarily storing data to be stored in the memory cells, wherein the read/write circuits are divided into a plurality of groups and perform a program operation to store the data in the memory cells coupled to the bit lines, and an initialization control unit suitable for initializing the cache latches of the read/write circuits of a group corresponding to the address before the data is input to the cache latches, when a program command and an address are input.

Abstract: A semiconductor device comprises a memory block having a content addressable memory (CAM) cell array storing data for internal operation conditions, and a memory cell array. The semiconductor device also comprises a page buffer to program data in the memory block or read the data programmed in the memory block; a control logic to activate a reset enable signal for initializing the page buffer during a reset operation and output the activated reset enable signal; and a power-supply controller to output a reset control signal for initializing the page buffer when the reset enable signal is activated, and provide a page buffer power-supply signal to the page buffer. The power-supply controller provides the page buffer power-supply signal after initialization of the page buffer.

Abstract: A semiconductor memory device includes an input/output circuit configured to receive an address and data from an exterior, and a peripheral circuit configured to receive the address through the input/output circuit and generate a chip selection signal based on the address. The input/output circuit may include a control pad circuit configured to apply or block at least one data strobe signal in response to the chip selection signal, and one or more input/output pad circuits configured to transfer the data to the peripheral circuits in response to the at least one data strobe signal.

Abstract: A semiconductor device includes a plurality of page buffers coupled to bit lines and suitable for performing a verification operation to output a verification signal to a verification terminal, wherein a predetermined number of page buffers are grouped into a sub-page buffer group; and verification signal control units, wherein each of the verification signal control units is coupled to the page buffers included in the corresponding sub-page buffer group and suitable for controlling to output the verification signals from the page buffers included in the corresponding sub-page buffer group to a verification terminal based on fail column data.

Abstract: A semiconductor device includes a memory array including memory cells, page buffers suitable for reading data from the memory cells, cache latch circuits suitable for latching read data from the page buffers, and transmitting latched data to data lines in response to a column selection signal, a column selector suitable for outputting the column selection signal to the cache latch circuits through column selection lines in response to a column address, and sense amplifiers suitable for outputting transmitted data of the data lines by sensing voltages of the data lines, in which the cache latch circuits are connected to the column selector and the sense amplifiers through the column selection lines and the data lines, respectively, and have inverse relationship between the column selection lines and the data lines in length.