Abstract: An integrated circuit includes an internal circuit including a input/output unit suitable for inputting/outputting data, and a voltage supplying circuit suitable for supplying a first operating voltage to the internal circuit in response to a first control signal during a general operation, and supplying a second operating voltage that is higher than the first operating voltage to the input/output unit in response to a second control signal during an output of the data.

Abstract: A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a first memory unit and a plurality of second memory unit, each including a plurality of memory cells and page buffers corresponding to the memory cells, and a redundancy memory unit including a plurality of redundancy memory cells and a plurality of redundancy page buffers corresponding to the redundancy memory cells. First input/output (I/O) data lines coupled to the first memory unit and second I/O data lines coupled to the second memory unit are coupled to the redundancy memory unit.

Abstract: A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device, includes a memory cell array including a plurality of memory cells, a read and write circuit configured to store read data by sensing data stored in the plurality of memory cells and output the read data to input/output data lines in response to data read control signals, in a read operation, and an output controller configured to control the data read control signals so that activation intervals of the data read control signals generated in a cache read operation of the read operation are longer than those generated in a normal read operation of the read operation.

Abstract: A data transfer circuit includes a plurality of first lines, a second line suitable for receiving data from a first line selected among the first lines, a third line suitable for transferring data to the first line selected among the first lines, a plurality of driving units, each suitable for driving the second line based on the data from the corresponding first line in a first operation, and a plurality of connection units, each suitable for coupling the third line to the corresponding first line when the corresponding first line is selected in a second operation.

Abstract: A semiconductor device includes a memory block including memory cells coupled to bit lines, read/write circuits each including cache latch suitable for temporarily storing data to be stored in the memory cells, wherein the read/write circuits are divided into a plurality of groups and perform a program operation to store the data in the memory cells coupled to the bit lines, and an initialization control unit suitable for initializing the cache latches of the read/write circuits of a group corresponding to the address before the data is input to the cache latches, when a program command and an address are input.

Abstract: A semiconductor memory device includes a plurality of memory cells arranged in a row direction and a column direction, a plurality of word lines each connected to memory cells in a row among the memory cells, and a majority of bit lines each connected to memory cells in a column among the memory cells. One or more memory cells are distributed as flag cells among memory cells connected to each word line, and flag cells connected to a first word line and flag cells connected to a second word line that is disposed adjacent to the first word line among the word lines are connected to first and second bit lines, respectively.

Abstract: Provided is a semiconductor memory device that may efficiently map an internal address used inside the semiconductor memory device in response to an external address that is applied from the outside of the semiconductor memory device. The semiconductor memory device may include a memory cell array configured to include a first main cell array, a first spare cell array, a second main cell array, and a second spare cell array each of which has internal cells that are selected in response to an internal address, and an address mapping unit configured to map external address as the internal address when the external address designates the first main and spare cell arrays, and to operate calculation with a given value and the external address and to map the calculation result value as the internal address when the external address designates the second main and spare cell arrays.

Abstract: A semiconductor memory device includes a count clock generation unit for generating a count clock in response to a clock signal and a dummy count clock, a column address generation unit for generating a column address in response to the count clock, and a Y decoder for sending data, stored in a page buffer unit, to a data line in response to the column address.

Abstract: A nonvolatile memory device includes a plurality of latches for storing data, a set/reset circuit for transferring data, stored in a selected latch of the latches, to a common node, a transmission circuit for transferring the data of the common node to a first sense node, a bit line transmission circuit for transferring the data of the first sense node to a bit line, a sense circuit for transferring the data of the first sense node to a second sense node, and a discharge circuit for changing a voltage level of the common node based on the data of the second sense node.

Abstract: A fail address detector includes cam latch groups configured to store fail addresses and a comparing section connected to the cam latch groups in common and configured to detect whether or not a fail address corresponding to a comparison address exists among the fail addresses received from the cam latch groups. The cam latch groups share the comparing section in time division.

Abstract: A semiconductor memory device includes an input/output circuit configured to receive an address and data from an exterior, and a peripheral circuit configured to receive the address through the input/output circuit and generate a chip selection signal based on the address. The input/output circuit may include a control pad circuit configured to apply or block at least one data strobe signal in response to the chip selection signal, and one or more input/output pad circuits configured to transfer the data to the peripheral circuits in response to the at least one data strobe signal.

Abstract: A nonvolatile memory device includes a plurality of latches for storing data, a set/reset circuit for transferring data, stored in a selected latch of the latches, to a common node, a transmission circuit for transferring the data of the common node to a first sense node, a bit line transmission circuit for transferring the data of the first sense node to a bit line, a sense circuit for transferring the data of the first sense node to a second sense node, and a discharge circuit for changing a voltage level of the common node based on the data of the second sense node.

Abstract: A method of programming a semiconductor memory device includes the steps of grouping memory cells in accordance with levels of threshold voltages to be programmed, programming the memory cell groups by sequentially applying program voltages to the memory cell groups, and program-verifying the memory cell groups.

Abstract: A nonvolatile memory device includes a plurality of latches for storing data, a set/reset circuit for transferring data, stored in a selected latch of the latches, to a common node, a transmission circuit for transferring the data of the common node to a first sense node, a bit line transmission circuit for transferring the data of the first sense node to a bit line, a sense circuit for transferring the data of the first sense node to a second sense node, and a discharge circuit for changing a voltage level of the common node based on the data of the second sense node.

Abstract: A semiconductor memory device includes a count clock generation unit for generating a count clock in response to a clock signal and a dummy count clock, a column address generation unit for generating a column address in response to the count clock, and a Y decoder for sending data, stored in a page buffer unit, to a data line in response to the column address.

Abstract: A nonvolatile memory device has memory cells coupled to bit lines and word lines and page buffers each coupled to one or more of the bit lines. Program and verification operations are performed on a first logical page from among first and second logical pages included in memory cells selected for a program operation. Data are loaded which will be programmed into the second logical page into first to third latches of a selected page buffer, coupled to the selected memory cells, from among the page buffers. A data setting operation is performed. The second logical page is programmed so that a distribution of threshold voltages of the selected memory cells has one of first to fourth threshold voltage distributions according to states of the data of the first to third latches and performing verification operations for the first to fourth threshold voltage distributions.

Abstract: A counting circuit includes first to fifth flip-flops (FFs) and a logic operation unit. Each of the first to fourth FFs has an initial value based on a preset control signal input through a 4-bit set terminal. Each of the first to fourth FFs receives a signal at a corresponding input terminal. And each of the first to fourth FFs outputs a signal at a corresponding output terminal according to a clock signal. The fifth FF is coupled to the output terminal of the fourth FF and is configured to output the output signal of the fourth FF synchronously with the clock signal. The logic operation unit logically combines the output signals of the second to fourth FFs and outputs first and second counting signals.

Abstract: A counting circuit includes first to fifth flip-flops (FFs) and a logic operation unit. Each of the first to fourth FFs has an initial value based on a preset control signal input through a 4-bit set terminal. Each of the first to fourth FFs receives a signal at a corresponding input terminal. And each of the first to fourth FFs outputs a signal at a corresponding output terminal according to a clock signal. The fifth FF is coupled to the output terminal of the fourth FF and is configured to output the output signal of the fourth FF synchronously with the clock signal. The logic operation unit logically combines the output signals of the second to fourth FFs and outputs first and second counting signals.

Abstract: A nonvolatile memory device includes a plurality of latches for storing data, a set/reset circuit for transferring data, stored in a selected latch of the latches, to a common node, a transmission circuit for transferring the data of the common node to a first sense node, a bit line transmission circuit for transferring the data of the first sense node to a bit line, a sense circuit for transferring the data of the first sense node to a second sense node, and a discharge circuit for changing a voltage level of the common node based on the data of the second sense node.

Abstract: A method of programming a semiconductor memory device includes the steps of grouping memory cells in accordance with levels of threshold voltages to be programmed, programming the memory cell groups by sequentially applying program voltages to the memory cell groups, and program-verifying the memory cell groups.