Abstract: The present disclosure relates to a method and device for controlling a Downlink Data Notification (DDN) message, which can reduce the DDN messages that occur while a user equipment transits from an active (ECM-active) state to an inactive (ECM-idle) state. During a bearer activation procedure according to a request from a user equipment, the DDN message control apparatus of the present disclosure sets a DDN flag value to a predetermined value when uplink data is received. When a DDN message is received from outside, the apparatus identifies the DDN flag value and stores the DDN message in case that the DDN flag value is identical with the predetermined value.

Abstract: A method of fabricating a semiconductor device includes forming a stacked structure in which 2n (here, n is an integer which is 2 or more) deposited sacrificial layers and 2n deposited insulating layers disposed on the 2n deposited sacrificial layers respectively are alternately deposited in a third direction perpendicular to a first direction and a second direction on a substrate having an upper surface extending in the first and second directions which are perpendicular to each other. Methods include forming a recess group including 2n?1 first recesses penetrating 20 through 2n?1 deposited sacrificial layers and forming a buried insulating layer group including 2n?1 buried insulating layers filling the 2n?1 first recesses respectively. A contact plug group including 2n contact plugs penetrating an uppermost deposited insulating layer of the 2n deposited insulating layers and the 2n?1 buried insulating layers may be formed.

Abstract: A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.

Abstract: A low-dropout regulator comprises an analog-to-digital converter that converts a feedback analog voltage signal into a digital signal, a phase synthesizing unit that generates a first control signal having a pulse width corresponding to error information in the digital signal by performing phase synthesis according to clock skew control, a charge pump circuit that selects a charge loop or a discharge loop based on polarity information in the digital signal, and generates an output control voltage according to current that flows during a period corresponding to the pulse width of the first control signal in the selected loop, and an output circuit that generates an output voltage based on an input voltage and the output control voltage, and generates the feedback analog voltage signal based on the output voltage.

Abstract: A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.

Abstract: A digital buck-boost conversion circuit includes an analog-to-digital converter configured to convert an output voltage signal into a digital signal, a pulse period control block configured to output a pulse period control signal based on degrees of scattering at different frequencies of the digital signal, a pulse generation block configured to output a pulse based on the pulse period control signal, and a buck-boost converter configured to convert the pulse into the output voltage signal.

Abstract: The present invention relates to a user interface method for controlling output of a reception signal sound of a smart device. The method of the present invention includes a step of executing the call-keeper application to select a call-keeper mode (including a mode name and a time for controlling output of the reception sound signal) for blocking output of the reception signal sound through a mode setting user interface. When the time for blocking output of the reception signal sound in a designated mode expires, communication is performed normally without controlling output of the reception signal sound according to classification.

Abstract: A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are etched to partially remove the etch mask pattern from the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region.

Abstract: Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the substrate. Both a blocking pattern covering a portion of the first layer in the first region and a low-density large-width pattern covering a portion of the first layer in the second region are simultaneously formed. A plurality of sacrificial mask patterns are formed on the first layer and the blocking pattern in the first region. A plurality of spacers covering exposed sidewalls of the plurality of sacrificial mask patterns are formed. The plurality of sacrificial mask patterns are removed.

Abstract: In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer remaining in a second region of the semiconductor device where broad features of the feature layer are to be located. A mold mask pattern is provided on the feature layer in the first region and on the mask layer in the second region. A spacer layer is provided on the mold mask pattern in the first region and in the second region. An etching process is performed to etch the spacer layer so that spacers remain at sidewalls of pattern features of the mold mask pattern, and to etch the mask layer in the second region to provide mask layer patterns in the second region.

Abstract: A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.

Abstract: A low-dropout regulator comprises an analog-to-digital converter that converts a feedback analog voltage signal into a digital signal, a phase synthesizing unit that generates a first control signal having a pulse width corresponding to error information in the digital signal by performing phase synthesis according to clock skew control, a charge pump circuit that selects a charge loop or a discharge loop based on polarity information in the digital signal, and generates an output control voltage according to current that flows during a period corresponding to the pulse width of the first control signal in the selected loop, and an output circuit that generates an output voltage based on an input voltage and the output control voltage, and generates the feedback analog voltage signal based on the output voltage.

Abstract: A digital-to-analog conversion apparatus to convert a digital signal to an output analog voltage signal includes an analog-to-digital conversion processing circuit and an analog voltage signal output circuit. The analog-to-digital conversion processing circuit is configured to increase a resolution of the digital-to-analog conversion apparatus without increasing a frequency of an input clock signal. The analog voltage signal output circuit is configured to generate the output analog voltage signal based on the input clock signal at the increased resolution of the digital-to-analog conversion apparatus.

Abstract: A digital-to-analog conversion apparatus to convert a digital signal to an output analog voltage signal includes an analog-to-digital conversion processing circuit and an analog voltage signal output circuit. The analog-to-digital conversion processing circuit is configured to increase a resolution of the digital-to-analog conversion apparatus without increasing a frequency of an input clock signal. The analog voltage signal output circuit is configured to generate the output analog voltage signal based on the input clock signal at the increased resolution of the digital-to-analog conversion apparatus.

Abstract: A method of fabricating a semiconductor device includes forming a stacked structure in which 2n (here, n is an integer which is 2 or more) deposited sacrificial layers and 2n deposited insulating layers disposed on the 2n deposited sacrificial layers respectively are alternately deposited in a third direction perpendicular to a first direction and a second direction on a substrate having an upper surface extending in the first and second directions which are perpendicular to each other. Methods include forming a recess group including 2n?1 first recesses penetrating 20 through 2n?1 deposited sacrificial layers and forming a buried insulating layer group including 2n?1 buried insulating layers filling the 2n?1 first recesses respectively. A contact plug group including 2n contact plugs penetrating an uppermost deposited insulating layer of the 2n deposited insulating layers and the 2n?1 buried insulating layers may be formed.

Abstract: A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.

Abstract: An NFC transmitter using a delay-locked loop and an NFC transmission method thereof are provided. The NFC near field communication (NFC) transmitter includes a delay-locked loop (DLL) that outputs a reference clock and a delayed clock using the reference clock and a value of a duty code which are input, a clock output unit that receives the reference clock and the delayed clock, outputs the reference clock in any of a high section and a low section of input data, and outputs a converted clock having a duty ratio using the reference clock and the delayed clock in the other of the high section and the lower section of the input data, and an RF signal generator that generates an RF signal using a PWM (Pulse Width Modulation) signal input from the clock output unit.

Abstract: A method of fabricating a semiconductor device includes forming a stacked structure in which 2n (here, n is an integer which is 2 or more) deposited sacrificial layers and 2n deposited insulating layers disposed on the 2n deposited sacrificial layers respectively are alternately deposited in a third direction perpendicular to a first direction and a second direction on a substrate having an upper surface extending in the first and second directions which are perpendicular to each other. Methods include forming a recess group including 2n?1 first recesses penetrating 20 through 2n?1 deposited sacrificial layers and forming a buried insulating layer group including 2n?1 buried insulating layers filling the 2n?1 first recesses respectively. A contact plug group including 2n contact plugs penetrating an uppermost deposited insulating layer of the 2n deposited insulating layers and the 2n?1 buried insulating layers may be formed.

Abstract: A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.

Abstract: A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.