Abstract: An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01˜10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Abstract: A rod-shaped FRP bar is manufactured with a fiber and a resin by using a nozzle (100) which includes an outer nozzle (11) having a penetration hole at its center and a plurality of middle nozzles (12) disposed at an inlet of the outer nozzle 11 so that one middle nozzle is located inside another middle nozzle with an interval. Fibers are supplied through a center hole of the middle nozzle located at an innermost location, through intervals between the middle nozzles and through intervals between the middle nozzles and the outer nozzle, thereby making a hybrid FRP bar (1) having a section in which the fibers configure a plurality of fiber distribution layers from the center of the FRP bar toward the outside.

Abstract: A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

Abstract: A foldable display includes a first plate, a second plate, a first protecting window, a second protecting window, a soft material layer and an intermediate layer which controls brightness. The first plate includes a thin film transistor and an organic light emitting diode (“OLED”), and displays at least one portion of an image to be displayed. The second plate includes a thin film transistor and an OLED, and displays a second portion different from the first portion of the image. The first protecting window is on the first plate. The second protecting window is on the second plate. The soft material layer is between the first and second protecting windows. The intermediate layer is between the soft material layer and a side surface of the first protecting window, and between the soft material layer and the second protecting window.

Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

Abstract: A hologram recording and reproducing apparatus including: a coherent light source; a beam splitter which splits a beam emitted from the coherent light source into a signal beam and a reference beam; a signal beam forming unit which modulates the signal beam split and directs the modulated signal beam onto a hologram recording medium; and a reference beam forming unit which directs the reference beam to be irradiated onto a location on the hologram recording medium which overlaps with a location on the hologram recording medium on which the signal beam is incident, wherein the signal beam forming unit includes: a first light guide member which transmits the signal beam split by the beam splitter; a spatial light modulator (SLM) which modulates the signal beam transmitted through the first light guide member; and a holographic Fourier transformation optical device which focuses the modulated signal beam onto the hologram recording medium.

Abstract: An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: A manufacturing method of an apparatus for generating electrical energy according to an embodiment of the present invention comprises disposing a first electrode on a substrate, disposing a nanowire comprising a piezoelectric material on the first electrode, disposing a photoelectric conversion layer which is electrically connected to the nanowire on the first electrode, disposing, a second electrode on the nanowire and the photoelectric conversion layer, connecting the first electrode and the second electrode by a connection part, and disposing a storage part which is electrically connected to the connection part, wherein when an external force is applied to at least one of the first electrode and the second electrode, the nanowire is transformed to generate electrical energy.

Abstract: Disclosed herein is a printed circuit board. In the printed circuit board provided with a router machining line to be partitioned into a unit region in which a plurality of unit substrates are formed and a dummy region enclosing the unit region, the unit region and the dummy region are formed in a plurality of layers and the printed circuit board includes detection coupons formed on each of the plurality of layers.

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract: Provided is a method for event processing and a system for using the same. The system for event processing in a computer may include an interface to detect an input associated with an event, an event definition engine which defines the event using a plurality of event components and a corresponding event component wrapper wrapping each of the plurality of event components, an event processing engine which processes the event, and an event action module to generate an output based on the event. The event definition engine may determine a hierarchical relationship between the plurality of event components and assigns the hierarchical relationship in the corresponding event component wrapper. Moreover, the event processing engine may execute each of the event components according to the hierarchical relationship assigned in the event component wrapper.

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract: A foldable display device includes a first display panel which displays a portion of an image; a second display panel which displays a second portion different from the first portion of the image; a first protecting window on the first display panel; a second protecting window on the second display panel; and a flexible material layer between the first and second protecting windows. Side surfaces of the first and second protecting windows which contact the flexible material layer, respectively, are inclined with respect to a surface of each of the first and second protecting windows.

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

Abstract: An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract: An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.