Patents by Inventor Sang-Yoon Lee

Sang-Yoon Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
    Patent number: 8529802
    Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 10, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Sang-Yoon Lee, Jeong-il Park, Myung-Kwan Ryu, Kyung-Bae Park
  • TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR
    Publication number: 20130221343
    Abstract: A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.
    Type: Application
    Filed: August 17, 2012
    Publication date: August 29, 2013
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung-seok SON, Myung-kwan RYU, Tae-sang KIM, Hyun-suk KIM, Joon-seok PARK, Jong-baek SEON, Sang-yoon LEE
  • Thin film transistor formed on flexible substrate and method of manufacturing the same
    Patent number: 8501556
    Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: August 6, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-yeon Kwon, Sang-yoon Lee, Jong-man Kim, Kyung-bae Park, Ji-sim Jung
  • THIN FILM PATTERNING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM PATTERNING METHOD
    Publication number: 20130183609
    Abstract: A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).
    Type: Application
    Filed: August 17, 2012
    Publication date: July 18, 2013
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-baek SEON, Myung-kwan RYU, Sang-yoon LEE
  • METHOD AND DEVICE FOR TRANSMITTING/RECEIVING IMAGE DATA AT HIGH SPEED
    Publication number: 20130176443
    Abstract: Provided are a method of transmitting and receiving image data with high speed, which includes sequentially transmitting image data output from an image sensor through one or more transmission channels with a speed corresponding to a bandwidth of the transmission channels, and sequentially recording image data received through one or more transmission channels in a frame store with a speed corresponding to a total bandwidth obtained by summing bandwidths of the respective one or more transmission channels, and an apparatus for implementing the method.
    Type: Application
    Filed: September 28, 2011
    Publication date: July 11, 2013
    Applicant: INTEKPLUS CO., LTD
    Inventors: Min-Gu Kang, Ja-Chul Ku, Sang-Yoon Lee, Ssang-Gun Lim
  • Methods of fabricating organic thin film transistors
    Patent number: 8476103
    Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
    Type: Grant
    Filed: January 23, 2012
    Date of Patent: July 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bon Won Koo, Joon Yong Park, Jung Seok Hahn, Joo Young Kim, Kook Min Han, Sang Yoon Lee
  • Poly-Si thin film transistor and method of manufacturing the same
    Patent number: 8476636
    Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.
    Type: Grant
    Filed: December 5, 2008
    Date of Patent: July 2, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Kyung-bae Park, Sang-yoon Lee, Jang-yeon Kwon, Byung-wook Yoo, Tae-sang Kim, Kyung-seok Son, Ji-sim Jung
  • TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    Publication number: 20130140551
    Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.
    Type: Application
    Filed: July 17, 2012
    Publication date: June 6, 2013
    Applicants: SAMSUNG MOBILE DISPLAY CO., LTD, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-seok Park, Tae-sang Kim, Hyun-suk Kim, Myung-kwan Ryu, Jong-baek Seon, Kyoung-seok Son, Sang-yoon Lee, Seok-jun Seo
  • Apparatus for storing energy and method for manufacturing the same
    Patent number: 8426055
    Abstract: An apparatus for storing energy may include: a plurality of nanowire cells electrically connected to each other; and a storage for storing electrical energy generated from the nanowire cells. Each of the plurality of nanowire cells may include: first and second electrodes disposed at an interval; and a nanowire, which is disposed between the first and the second electrodes and made of a piezoelectric material. The plurality of nanowire cells may be electrically connected, so that voltage or current may be increased. Therefore, wireless recharging of the storage connected to the nanowire cells with electrical energy may be enabled.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: April 23, 2013
    Assignees: Samsung Electronics Co., Ltd., Kumoh National Institute of Technology
    Inventors: Dukhyun Choi, Sang Yoon Lee, Jaeyoung Choi, Hansu Kim, Sangwoo Kim
  • Driving device for unit pixel of organic light emitting display and method of manufacturing the same
    Patent number: 8405161
    Abstract: Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.
    Type: Grant
    Filed: October 23, 2007
    Date of Patent: March 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Jang-yeon Kwon, Sang-yoon Lee, Ji-sim Jung
  • Thin film transistors having an additional floating channel and methods of manufacturing the same
    Patent number: 8395155
    Abstract: Thin film transistors (TFTs) and methods of manufacturing the same. A TFT may include a floating channel on a surface of a channel and spaced apart from a source and a drain, and an insulating layer formed on the floating channel and designed to determine a distance between the floating channel and the source or the drain.
    Type: Grant
    Filed: January 26, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eok-su Kim, Sang-yoon Lee, Myung-kwan Ryu, Kyung-bae Park
  • Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film
    Patent number: 8394668
    Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Baek Seon, Myung-Kwan Ryu, Kyung-Bae Park, Sang-Yoon Lee, Bon-Won Koo
  • Composition and organic insulating film prepared using the same
    Patent number: 8395146
    Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Seok Hahn, Eun Kyung Lee, Sang Yoon Lee, Eun Jeong Jeong, Joo Young Kim
  • Thin film transistor and method of manufacturing the same
    Patent number: 8383467
    Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-wook Yoo, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Method of making carbon nanotube patterned film or carbon nanotube composite using carbon nanotubes surface-modified with polymerizable moieties
    Patent number: 8383317
    Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: February 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Jung Han Shin, Sang Yoon Lee
  • TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS
    Publication number: 20130043475
    Abstract: A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.
    Type: Application
    Filed: June 6, 2012
    Publication date: February 21, 2013
    Applicants: SAMSUNG MOBILE DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-suk Kim, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jong-baek Seon, Kyoung-seok Son, Won-mook Choi, Joon-seok Park, Mi-jeong Song
  • Oxide semiconductor and thin film transistor including the same
    Patent number: 8378342
    Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: February 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-sang Kim, Sang-yoon Lee, Jang-yeon Kwon, Kyoung-seok Son, Ji-sim Jung, Kwang-hee Lee
  • Organic thin film transistor
    Patent number: 8373161
    Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do Hwan Kim, Hyun Sik Moon, Byung Wook Yoo, Sang Yoon Lee, Bang Lin Lee, Jeong Il Park, Eun Jeong Jeong
  • Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure
    Patent number: 8373158
    Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: February 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-il Park, Byung-wook Yoo, Do-hwan Kim, Sang-yoon Lee, Bang-lin Lee, Eun-jeong Jeong
  • METHOD OF PREPARING THIN FILM, THIN FILM, APPARATUS FOR PREPARING THIN FILM, AND ELECTRONIC DEVICE INCLUDING THIN FILM
    Publication number: 20130034708
    Abstract: A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 ? to about 20,000 ? and a refractive index in a range of about 1.85 to about 2.0.
    Type: Application
    Filed: August 3, 2012
    Publication date: February 7, 2013
    Applicants: SAMSUNG DISPLAY CO., LTD., SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-kwan Ryu, Jong-baek Seon, Sang-yoon Lee