Abstract: A substrate type sensor includes a substrate shape member, a pressure sensor panel provided at the substrate shape member, the pressure sensor panel including a plurality of pressure sensors, a central module including a transmission unit, the reception unit receiving data from the pressure sensor panel, and a battery proving power to the pressure sensor panel and the central module.

Abstract: Disclosed are a self-generating pressure-sensitive light-emitting device and a method of manufacturing the same. The self-generating pressure-sensitive light-emitting device includes an electrochemical light-emitting device in which a first electrode, a light-emitting layer and a second electrode are sequentially formed; and a triboelectric self-generating device formed on the second electrode and configured to share the second electrode of the electrochemical light-emitting device, wherein the electrochemical light-emitting device and the triboelectric self-generating device share the second electrode and thus the electrochemical light-emitting device is driven due to a potential difference generated from the triboelectric self-generating device.

Abstract: A lower rail for a seat of a vehicle has a structure with a curved movement path, in which the seat may be moved in an oblique direction or a diagonal direction according to various seat positions, thereby allowing a degree of freedom for adjusting a seat position movement. In addition, the lower rail includes a curved inner channel bent at a predetermined angle and a curved outer channel bent at about a same angle as the curved inner channel, which are separately provided and configured to be mutually combined in order to provide one curved movement path for moving the seat.

Abstract: The present disclosure relates to a sulfide-based solid electrolyte having a new composition and a new crystal structure.

Abstract: An apparatus for and a method for estimating blood pressure are provided. The apparatus for estimating blood pressure includes: a sensor configured to measure a pulse wave signal from an object; and a processor configured to obtain a mean arterial pressure (MAP) based on the pulse wave signal, configured to classify a phase of the obtained MAP according to at least one classification criterion, and to obtain a systolic blood pressure (SBP) by using an estimation model corresponding to the classified phase of the MAP among estimation models corresponding to respective phases of the MAP.

Abstract: Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent.

Abstract: Disclosed are a photosensitive polymer including a repeating unit of Chemical Formula 1 or Chemical Formula 2 derived from a vinyl heteroaromatic compound and a resist composition including the same. In Chemical Formula 1 or 2, R1 and R2 are hydrogen or a methyl group, X is a carbon, sulfur, or a nitrogen atom, and n is 1 or 2.

Abstract: A dry etching device which can be used to etch products or used in processes regardless of materials and exhibits an excellent accuracy, and a method for controlling the same. The dry etching device includes: an anode part; a cathode part disposed at an upper side of the anode part and facing the anode part, receiving bi-directional voltage power in which polarity of a voltage alternates between a positive voltage and a negative voltage depending on time, and spaced apart from the anode part; a leveling part disposed in close contact with a surface of the cathode part facing the anode part, and for positioning a work-piece in a flat state; a holding part for holding the work-piece and the leveling part to the surface of the cathode part facing the anode part; and a bi-directional voltage power supplier for applying the bi-directional voltage power to the cathode part.

Abstract: The present invention relates to a dry etching apparatus which can be applied regardless of materials. The dry etching apparatus may include: an anode unit; a cathode unit configured to receive a bidirectional voltage source of which the voltage polarity alternates between a positive voltage and a negative voltage with time, and separated from the anode unit; a positioning unit configured to position a work piece at a surface of the cathode unit, facing the anode unit; and a bidirectional voltage source supply unit configured to apply the bidirectional voltage source to the cathode unit.

Abstract: The present invention determines whether a fire or disaster has occurred in various fields based on voices in an exigency situation and surrounding environmental sounds, and automatically transmits an alarm, so that it can detect the occurrence of a disaster rapidly and accurately. The system of the present invention is installed in a building or is provided as a program of a computer or an application of a smartphone, so that the installation and maintenance of the system are simple.

Abstract: The present invention determines whether a fire or disaster has occurred in various fields based on voices in an exigency situation and surrounding environmental sounds, and automatically transmits an alarm, so that it can detect the occurrence of a disaster rapidly and accurately. The system of the present invention is installed in a building or is provided as a program of a computer or an application of a smartphone, so that the installation and maintenance of the system are simple.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: An anti-reflective hardmask composition contains: (a) an arylcarbazole derivative polymer represented by the following Chemical Formula 1 or a polymer blend containing the same; and (b) an organic solvent in Chemical Formula 1, A1 and A2 are each independently a (C6-C40) aromatic aryl group and are the same as or different from each other, R is t-butyloxycarbonyl (t-BOC), ethoxyethyl, isopropyloxyethyl, or tetrahydropyranyl, X1 and X2 are each a polymerization linkage group derived from aldehyde or an aldehyde acetal monomer capable of being one-to-one polymerized with an arylcarbazole derivative and A2 in the presence of an acid catalyst, m/(m+n) is in a range of 0.05 to 0.8, and a weight average molecular weight (Mw) of an the polymer is in a range of 1,000 to 30,000.

Abstract: The present embodiment provides a method for calculating food intake comprising, an operation of detecting a biometric reaction of a food intake target; an operation of specifying a biometric trait which identifies the food intake target based on the biometric reaction; an operation of obtaining unit food intake which is an amount of food that the food intake target consumes in one swallow, based on the biometric trait; an operation of measuring the number of swallows of the food intake target; and an operation of calculating total food intake which is a total amount of food consumed by the food intake target from the unit food intake and the number of swallows; wherein the biometric reaction and the unit food intake varies depending on the biometric trait.

Abstract: Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent.

Abstract: The present invention relates to a control method of a dry etching apparatus which can be applied regardless of materials. The control method of a dry etching apparatus may include: a work piece positioning step of positioning a work piece close to a surface of a cathode unit, facing an anode unit; a bidirectional voltage source applying step of applying a voltage to the cathode unit, the voltage having a polarity alternating between a positive voltage and a negative voltage with time; and an etching step of etching the surface of the work piece using plasma generated by the bidirectional voltage source applied to the cathode unit.

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.