Patents by Inventor Sang-Uk Son
Sang-Uk Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240364299Abstract: A bulk acoustic resonator includes an active region in which a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode in a height direction, and a second electrode disposed on the piezoelectric layer in the height direction overlap each other in the height direction; a peripheral region in which the first electrode or the second electrode extends outwardly from the active region so that the first electrode and the second electrode do not overlap each other in the height direction in the peripheral region; and an auxiliary layer disposed in the peripheral region, wherein a first cutoff frequency of the active region is substantially equal to a second cutoff frequency of the peripheral region.Type: ApplicationFiled: March 18, 2024Publication date: October 31, 2024Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Woon KIM, Jeonga KIM, Jeong Hoon RYOU, Won HAN, Sang Uk SON, Tae Kyung LEE
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Publication number: 20240356524Abstract: A bulk acoustic resonator includes a resonance portion including a first electrode, a piezoelectric layer disposed on the first electrode along a height direction, and a second electrode disposed on the piezoelectric layer along the height direction. The resonance portion includes an overlapping region in which the first electrode, the piezoelectric layer, and the second electrode overlap each other along the height direction. The overlapping region includes a central portion and an edge portion disposed outside the central portion, and including a first edge portion and a second edge portion. A height of the second electrode of the first edge portion and a height of the second electrode of the second edge portion are lower than a height of the second electrode of the central portion along the height direction, and are different from each other along the height direction.Type: ApplicationFiled: February 22, 2024Publication date: October 24, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Sang Uk SON, Jong Woon KIM, Sungwook KIM, Jeong Hoon RYOU, Daehun JEONG, Jung-Eun YOUM, Sangheon HAN, Jeonga KIM, Hwasun LEE
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Patent number: 12090754Abstract: Provided are a nozzle inspection method and a nozzle inspection apparatus capable of accurately detecting a defect in an inkjet head nozzle within a short time. The nozzle inspection method comprises discharging a plurality of droplets into a first region of interest of a substrate using a first nozzle to form an inspection pattern, and determining whether the first nozzle is defective based on the inspection pattern.Type: GrantFiled: July 22, 2022Date of Patent: September 17, 2024Assignee: SEMES CO., LTD.Inventors: Sang Uk Son, Yong Tak Hyun, Dae Sung Kim
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Publication number: 20240278553Abstract: A droplet inspection method using a 2-dimensional (2D) image of a droplet includes ejecting ink onto a substrate based on a preset inspection pattern using an inkjet head, acquiring a 2D image of the droplet of ink ejected to a plurality of positions on the substrate using a measurement camera located on a side surface or above the substrate, and calculating a diameter of the droplet from the 2D image and calculating a volume of the droplet using the calculated diameter of the droplet and a pre-measured contact angle of the substrate for inspection.Type: ApplicationFiled: January 3, 2024Publication date: August 22, 2024Inventor: Sang Uk SON
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Publication number: 20240262116Abstract: Provided is a nozzle inspection method, the nozzle inspection method including: an operation of forming a pattern for inspection, including a first chemical solution discharge operation of discharging a chemical solution onto a substrate in a first state in which a distance between a substrate and a first nozzle is a first distance and a second chemical solution discharge operation of discharging a chemical solution onto a substrate in a second state in which a distance between the substrate and the first nozzle is a second distance, different from the first distance; and an inspection operation of inspecting the pattern for inspection to determine whether a nozzle is defective.Type: ApplicationFiled: December 22, 2023Publication date: August 8, 2024Inventors: Sang Uk SON, Yong Tak HYUN
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Patent number: 12057822Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(?0.59*F)] is [[ln{0.008 (?m)2}]/{?0.59*(3.5 GHz)}] or more and [[ln{0.022 (?m)2}]/{?0.59*(3.5 GHz)}] or less.Type: GrantFiled: May 4, 2021Date of Patent: August 6, 2024Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Uk Son, Sung Wook Kim, Won Han, Jong Woon Kim, Jeong Hoon Ryou, Sang Heon Han
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Patent number: 12028048Abstract: A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.Type: GrantFiled: April 30, 2021Date of Patent: July 2, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Hosoo Park, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Jeashik Shin, Moonchul Lee
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Patent number: 11894833Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.Type: GrantFiled: April 17, 2020Date of Patent: February 6, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Moon Chul Lee
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Patent number: 11870419Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.Type: GrantFiled: April 5, 2021Date of Patent: January 9, 2024Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sang Uk Son, Tae Yoon Kim, Chang Hyun Lim, Sang Heon Han, Jong Beom Kim
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Patent number: 11843365Abstract: A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.Type: GrantFiled: January 8, 2021Date of Patent: December 12, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Won Han, Moon Chul Lee, Sang Uk Son, Hwa Sun Lee
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Publication number: 20230170872Abstract: A bulk-acoustic wave resonator includes a substrate, a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in this order on the substrate, and a seed layer disposed below the first electrode, wherein the resonance portion includes an active portion disposed in a central portion of the resonance portion, and a lateral resonance suppressing portion disposed to surround the active portion, wherein a thickness distribution of the seed layer, the first electrode, the piezoelectric layer, and the second electrode in the lateral resonance suppressing portion is different from a thickness distribution in the active portion.Type: ApplicationFiled: August 17, 2022Publication date: June 1, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Heon HAN, Sang Uk SON
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Publication number: 20230066695Abstract: Provided are a nozzle inspection method and a nozzle inspection apparatus capable of accurately detecting a defect in an inkjet head nozzle within a short time. The nozzle inspection method comprises discharging a plurality of droplets into a first region of interest of a substrate using a first nozzle to form an inspection pattern, and determining whether the first nozzle is defective based on the inspection pattern.Type: ApplicationFiled: July 22, 2022Publication date: March 2, 2023Inventors: Sang Uk SON, Yong Tak HYUN, Dae Sung KIM
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Patent number: 11595022Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.Type: GrantFiled: June 11, 2020Date of Patent: February 28, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sung Wook Kim, Dae Hun Jeong, Sang Uk Son, Sang Heon Han, Jeong Hoon Ryou
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Patent number: 11563417Abstract: An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.Type: GrantFiled: September 21, 2018Date of Patent: January 24, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sang Uk Son, Won Han, Jong Woon Kim
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Patent number: 11558025Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.Type: GrantFiled: October 20, 2020Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jeong Hoon Ryou, Sang Uk Son, Sung Wook Kim, Won Han, Dae Hun Jeong, Sang Heon Han
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Patent number: 11558027Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.Type: GrantFiled: March 25, 2019Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sung Wook Kim, Sang Uk Son, Sang Heon Han, Won Han
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Patent number: 11476826Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.Type: GrantFiled: November 14, 2017Date of Patent: October 18, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Dae Ho Kim, Yong Suk Kim, Seung Hun Han, Moon Chul Lee, Chang Hyun Lim, Sung Jun Lee, Sang Kee Yoon, Tae Yoon Kim, Sang Uk Son
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Patent number: 11431318Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.Type: GrantFiled: April 23, 2019Date of Patent: August 30, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Chang Hyun Lim, Tae Yoon Kim, Sang Uk Son, Sang Kee Yoon
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Publication number: 20220239278Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(?0.59*F)] is [[ln{0.008 (?m)2}]/{?0.59*(3.5 GHz)}] or more and [[ln{0.022 (?m)2}]/{?0.59*(3.5 GHz)}] or less.Type: ApplicationFiled: May 4, 2021Publication date: July 28, 2022Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Uk Son, Sung Wook Kim, Won Han, Jong Woon Kim, Jeong Hoon Ryou, Sang Heon Han
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Patent number: 11394363Abstract: A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.Type: GrantFiled: July 16, 2020Date of Patent: July 19, 2022Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Tae Yoon Kim, Chang Hyun Lim, Sang Uk Son, Jae Hyoung Gil, Dae Hun Jeong