Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately ?50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

Abstract: Substrate processing chambers with integrated shutter garage are provided herein. In some embodiments, a pre-clean substrate processing chamber may include a chamber body, wherein the chamber body includes a first side configured to be attached to mainframe substrate processing tool, and a second side disposed opposite the first side, a substrate support configured to support a substrate when disposed thereon, a shutter disk garage disposed on the second side of the process chamber, and a shutter disk assembly mechanism comprising a rotatable shaft, and a robot shutter arm coupled to the shaft, wherein the robot shutter arm includes a shutter disk assembly support section configured to support a shutter disk assembly, and wherein the shutter disk assembly mechanism is configured to move the robot shutter arm between a storage position within the shutter garage and a processing position within the process chamber over the substrate support.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

Abstract: Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.

Abstract: An apparatus, methods and controllers for electrostatically chucking varied substrate materials are disclosed. Some embodiments of the disclosure provide electrostatic chucks with variable polarity and/or voltage. Some embodiments of the disclosure provide electrostatic chucks able to operate as monopolar and bipolar electrostatic chucks. Some embodiments of the disclosure provide bipolar electrostatic chucks able to compensate for substrate bias and produce approximately equal chucking force at different electrodes.

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular ring configured to surround a substrate support; and an annular lip extending from an upper surface of the annular ring, wherein the annular ring includes a plurality of ring slots extending through the annular ring and disposed at regular intervals along the annular ring, and wherein the annular lip includes a plurality of lip slots extending through the annular lip disposed at regular intervals along the annular lip.

Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately ?50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.