Abstract: A method for mirroring in three-dimensional-stacked memory includes receiving a plurality of thermal profiles from a plurality of memory chips. The method also includes ranking the plurality of memory chips in a first ranked list of memory chips as a function of the plurality of thermal profiles and forming a first group of memory chips from the plurality of memory chips based on the first ranked list of memory chips. The method also includes forming a second group of memory chips from the plurality of memory chips distinct from the first group of memory chips based on the first ranked list of memory chips. The method also includes pairing a first memory chip from the first group of memory chips and a second memory chip from the second group of memory chips, and mirroring the pairing of memory chips.

Abstract: A method for mirroring in three-dimensional-stacked memory includes receiving a plurality of thermal profiles from a plurality of memory chips. The method also includes ranking the plurality of memory chips in a first ranked list of memory chips as a function of the plurality of thermal profiles and forming a first group of memory chips from the plurality of memory chips based on the first ranked list of memory chips. The method also includes forming a second group of memory chips from the plurality of memory chips distinct from the first group of memory chips based on the first ranked list of memory chips. The method also includes pairing a first memory chip from the first group of memory chips and a second memory chip from the second group of memory chips, and mirroring the pairing of memory chips.

Abstract: According to one aspect, a method for performance optimization of read functions in a memory system includes receiving, at the memory system, a read request including a logical address of a target data. The memory system includes a primary memory and a back-up memory that minors the primary memory. The method also includes searching a fault monitor table for an entry corresponding to the received logical address. The fault monitor table includes a plurality of entries that indicate physical locations of identified memory failure events in the primary memory and the back-up memory. Based on locating an entry corresponding to the received logical address, the method further includes selecting one of the primary memory and the backup memory for retrieving the target data. The selection is based on contents of the fault monitor table.

Abstract: A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.

Abstract: A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.

Abstract: The present disclosure includes a three dimensional (3D) integrated device comprising a first die having a first supply line and a second die having a second supply line, a power header, and voltage selection logic. The power header is connected to the first die and the second die and configured to generate a first voltage on a first voltage line and a second voltage on a second voltage line. The voltage selection logic is connected to the first supply line and the second supply line and configured to select between the first voltage line and the second voltage line for each of the first supply line and the second supply line.

Abstract: A method for testing a stacked memory device having a plurality of memory chips connected to and arranged on top of a logic chip for a connection defect is disclosed. The method may include testing a memory chip by writing a data value into a first location in the memory chip, reading a data value from the first location, detecting a first bit error and recording a bit number of the first bit error. The method may also include testing the memory chip by writing a data value into a second location in the memory chip, reading a data value from the second location in the memory chip, detecting a second bit error and recording a bit number of the second bit error. The method may also include replacing a connection common to the first and second bit errors with a spare connection.

Abstract: A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.

Abstract: By arranging dies in a stack such that failed cores are aligned with adjacent good cores, fast connections between good cores and cache of failed cores can be implemented. Cache can be allocated according to a priority assigned to each good core, by latency between a requesting core and available cache, and/or by load on a core.

Abstract: A method, system and computer program product are provided for implementing ECC (Error Correction Codes) redundancy using reconfigurable logic blocks in a computer system. When a fail is detected when reading from memory, it is determined if the incorrect data is in the data or the ECC component of the data. When incorrect data is found in the ECC component of the data, and an actionable threshold is not reached, a predetermined Reliability, Availability, and Serviceability (RAS) action is taken. When the actionable threshold is reached with incorrect data identified in the ECC component of the data, an analysis process is performed to determine if the ECC logic is faulty. When a fail in the ECC logic is detected, the identified ECC failed logic is replaced with a spare block of logic.

Abstract: Apparatus and methods are disclosed that enable the allocation of a cache portion of a memory buffer to be utilized by an on-cache function controller (OFC) to execute processing functions on “main line” data. A particular method may include receiving, at a memory buffer, a request from a memory controller for allocation of a cache portion of the memory buffer. The method may also include acquiring, by an on-cache function controller (OFC) of the memory buffer, the requested cache portion of the memory buffer. The method may further include executing, by the OFC, a processing function on data stored at the cache portion of the memory buffer.

Abstract: Apparatus and methods are disclosed that enable the allocation of a cache portion of a memory buffer to be utilized by an on-cache function controller (OFC) to execute processing functions on “main line” data. A particular method may include receiving, at a memory buffer, a request from a memory controller for allocation of a cache portion of the memory buffer. The method may also include acquiring, by an on-cache function controller (OFC) of the memory buffer, the requested cache portion of the memory buffer. The method may further include executing, by the OFC, a processing function on data stored at the cache portion of the memory buffer.

Abstract: Data is retrieved from a stacked memory device having a plurality of slave memory chips in response to recognizing a problem in the stacked memory device. The problem is determined to be associated with a primary driver module in the stacked memory device. In response, the primary driver module is disabled and an emergency driver module is enabled. Each of the plurality of slave memory chips are selected using a multiplexing unit to retrieve data using the emergency driver module.

Abstract: Data is retrieved from a stacked memory device having a plurality of slave memory chips in response to recognizing a problem in the stacked memory device. The problem is determined to be associated with a primary driver module in the stacked memory device. In response, the primary driver module is disabled and an emergency driver module is enabled. Each of the plurality of slave memory chips are selected using a multiplexing unit to retrieve data using the emergency driver module.

Abstract: A system for memory device control may include a stacked memory device and a memory controller. The stacked memory device may include a stack of chips connected to a package substrate by electrical interconnects. The stack may include a plurality of memory chips, a primary control chip, and a secondary control chip. The primary and secondary control chips may be electrically connected to the plurality of memory chips by an internal data bus. The primary control chip may have logic to provide an interface between the internal data bus and a first external data bus. The secondary control chip may have logic to provide an interface between the internal data bus and a second external data bus.

Abstract: A system for memory device control may include a stacked memory device and a memory controller. The stacked memory device may include a stack of chips connected to a package substrate by electrical interconnects. The stack may include a plurality of memory chips, a primary control chip, and a secondary control chip. The primary and secondary control chips may be electrically connected to the plurality of memory chips by an internal data bus. The primary control chip may have logic to provide an interface between the internal data bus and a first external data bus. The secondary control chip may have logic to provide an interface between the internal data bus and a second external data bus.

Abstract: A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.

Abstract: A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.

Abstract: A method and apparatus for operation of a memory module for storage of a data word is provided. The apparatus includes a memory module having a set of paired memory devices including a first memory device to store a first section of a data word and a second memory device to store a second section of the data word when used in failure free operation. The apparatus may further include a first logic module to perform a write operation by writing the first and second sections of the data word to both the first memory device and the second memory device upon the determination of certain types of failure. The determination may include that a failure exists in the word section storage of either the first or second memory devices but that no failures exist in equivalent locations of word section storage in the two memory devices.

Abstract: Methods and data processing systems for using a buffer to replace failed memory cells in a memory component are provided. Embodiments include determining that a first copy of data stored within a plurality of memory cells of a memory component contains one or more errors; in response to determining that the first copy contains one or more errors, determining whether a backup cache within the buffer contains a second copy of the data; and in response to determining that the backup cache contains the second copy of the data, transferring the second copy from the backup cache to a location within an error data queue (EDQ) within the buffer and updating the buffer controller to use the location within the EDQ instead of the plurality of memory cells within the memory component.