Abstract: A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A gas sensor includes a p-type semiconductor layer that contains a compound of copper or silver and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A gas analyzer including: a chamber; a first gas sensor provided in the chamber and including a first gas sensitive member; a second gas sensor provided in the chamber and including a second gas sensitive member; and a detector that detects each of resistance changes of the first and the second gas sensitive members; wherein the first gas sensitive member is an oxide semiconductor mainly composed of at least one of Sn, W, Zn and In or a semiconductor mainly composed of C, and the second gas sensitive member is mainly composed of a halide or an oxide of Cu or Ag.

Abstract: A gas sensor device includes: a sensor film including a sensor surface and a resistance which increases with an increase in an amount of gas adsorbed on the sensor surface; a first electrode, a second electrode, and a third electrode that are electrically coupled to the sensor film; and a protective film that covers the sensor surface in a region between the first electrode and the second electrode, wherein the sensor surface is exposed in a region near the third electrode.

Abstract: A measurement device includes a first flow passage, a heating unit provided on one end side of the first flow passage, a gas detection unit provided on one end side of the first flow passage and capable of detecting a gas through heat applied from the heating unit, and a particle measurement unit which optically measures, at an upper side than the heating unit of the first flow passage, particles passing through the first flow passage.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

Abstract: In order to form a photoelectric conversion layer of a photoelectric conversion element, mixed liquid including poly-[N-9?-heptadecanyl-2,7-carbazole-alt-5,5-(4?,7?-di-2-thienyl2?,1?,3?-benzothiadiazle)] as a p-type organic semiconductor material and a fullerene derivative as an n-type organic semiconductor material, which configure a bulk heterojunction are applied and dried. The dried substance is exposed in an atmosphere including vapor of a solvent that dissolves the p-type organic semiconductor material preferentially to the n-type organic semiconductor material.

Abstract: Provided is a photoelectric conversion device which includes a positive electrode, a negative electrode, a photoelectric conversion layer including poly-[N-9?-heptadecanyl-2,7-carbazole-alt-5,5-(4?,7?-di-2-thienyl-2?,1?,3?-benzothiadiazole)] as a p-type organic semiconductor material and fullerene or a fullerene derivative as an n-type organic semiconductor material; and a buffer layer, provided between the positive electrode and the photoelectric conversion layer, including MoO3, in which device the proportion of the p-type organic semiconductor material in a first region being in contact with the buffer layer in the photoelectric conversion layer is higher than the proportion of the p-type organic semiconductor material in the entirety of the photoelectric conversion layer, and the proportion of the p-type organic semiconductor material in a second region on the negative electrode side than the first region in the photoelectric conversion layer is lower than the proportion of the p-type organic semiconducto

Abstract: A photoelectric conversion device includes a positive electrode, a negative electrode, and a photoelectric conversion layer including a p-type organic semiconductor material and an n-type organic semiconductor material that configure a bulk heterojunction. The photoelectric conversion layer includes an amorphous polymer compound including a carbazole ring, a fluorene ring or a cyclopentadithiopene ring in a main chain as the p-type organic semiconductor material, and includes an amorphous fullerene derivative as the n-type organic semiconductor material. The photoelectric conversion layer has a diffraction peak corresponding to a plane spacing d=1.6 nm to 2.0 nm in an X-ray diffraction profile.

Abstract: Provided is a photoelectric conversion device which includes a positive electrode, a negative electrode, a photoelectric conversion layer including poly-[N-9?-heptadecanyl-2,7-carbazole-alt-5,5-(4?,7?-di-2-thienyl-2?,1?,3?-benzothiadiazole)] as a p-type organic semiconductor material and fullerene or a fullerene derivative as an n-type organic semiconductor material; and a buffer layer, provided between the positive electrode and the photoelectric conversion layer, including MoO3, in which device the proportion of the p-type organic semiconductor material in a first region being in contact with the buffer layer in the photoelectric conversion layer is higher than the proportion of the p-type organic semiconductor material in the entirety of the photoelectric conversion layer, and the proportion of the p-type organic semiconductor material in a second region on the negative electrode side than the first region in the photoelectric conversion layer is lower than the proportion of the p-type organic semiconducto

Abstract: Provided is a photoelectric conversion device which includes a first conductivity type inorganic semiconductor layer, a noble metal film provided partially on the surface of the first conductivity type inorganic semiconductor layer, and a photoelectric conversion layer including a first conductivity type organic semiconductor pillar being in contact with the noble metal film and containing a sulfur atom, and a second conductivity type organic semiconductor pillar being in contact with the first conductivity type inorganic semiconductor layer and including a material not containing a sulfur atom.

Abstract: A method for manufacturing a photoelectric conversion element includes: forming a hole injection layer by applying a solvent containing a first p-type organic semiconductor and an oxidant capable of oxidizing the first p-type organic semiconductor on a transparent substrate and a transparent electrode provided on the transparent substrate and by removing the solvent by drying to oxidize the first p-type organic semiconductor with the oxidant; forming a photoelectric conversion layer by applying a solvent containing an n-type organic semiconductor and a second p-type organic semiconductor on the hole injection layer and by removing the solvent by drying; and forming a metal electrode using a metal layer on the photoelectric conversion layer.

Abstract: A print job creation apparatus of the invention connecting with a local network uses an output destination setting window 66 to set an output destination for output of a print job under creation or a created print job with respect to each combination of a print service and a paper size in a tabular form. Each setting field in the output destination setting window 66 includes an output destination setting box 67 on the upper row to set a selected output destination, a paper type setting box 68 on the middle row to set a selected type of printing paper, and an output step setting box 69 on the lower row to set a selected print job creation step for output of a print job to the output destination. A pulldown menu is open in the output destination setting box 67 to give available options including other print job creation apparatuses and printers connecting with the same local network and other print job creation apparatuses and printers connecting with a different local network.

Abstract: A method of producing alloy nanoparticles includes the steps of: adding a metallic salt, a reducing agent, a stabilizing ligand, and an organic iron complex to an organic solvent selected from the group consisting of 2-20C hydrocarbon, alcohol, ether, and ester in an inert gas atmosphere to obtain a reaction liquid; and stirring the reaction liquid while heating the reaction liquid to a predetermined temperature. The grain diameter of the alloy nanoparticle is controlled by regulating the amount of the stabilizing ligand.

Abstract: Hard-magnetic nanoparticles having a small particle size and an ordered crystal structure with a high magnetic anisotropic energy are provided together with a manufacturing method therefor, a magnetic fluid comprising a dispersion of the hard-magnetic particles, and a magnetic recording medium with an excellent S/N ratio. The method for manufacturing the hard-magnetic nanoparticles comprises the steps of causing metal nanoparticles to be adsorbed on a porous material, heat-treating the metal nanoparticles in a reducing atmosphere, and dissolving the porous material in a liquid capable of dissolving the porous material to isolate the hard-magnetic nanoparticles from the porous material.

Abstract: A magnetic recording medium has a recording layer, disposed above a surface of a substrate and made of hard magnetic nano-particles. The hard magnetic nano-particles are made of an alloy having as a main component an element selected from a group consisting of FePt, FePd and CoPt, and the hard magnetic nano-particles have axes of easy magnetization oriented in a direction approximately perpendicular to the surface of the substrate.

Abstract: A magnetic disk evaluation apparatus includes an evaluation head for evaluating a magnetic disk, and a support member for supporting the evaluation head. The support member supports the evaluation head in a state where a flying surface of the evaluation head and a surface of a magnetic disk make a flying pitch angle of 95 ?rad or more.

Abstract: A substrate defines minute holes or nanoholes over its surface in a composite material. Particles or nanoparticles are filled within the minute holes. The composite material enables a reliable disposition of the particles within the minute holes. The position of the minute holes can reliably be controlled. This serves to establish regularly ordered particles based on the regularly ordered minute holes. This composite material is applicable to a magnetic recording medium.