Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

Abstract: The present invention is to provide a terminal for presenting a sentence candidate that presents a candidate to improve the work efficiency and to standardize a sentence, when a report is generated. The terminal for presenting a sentence candidate 100 is capable of presenting a more appropriate sentence candidate by including a report data base 131 that stores a report including a plurality of sentences, searching the report data base by an input character, generating a report group including a plurality of reports as a search result, extracting a sentence containing a character input from the report group to generate a sentence group, and preferentially outputting a predetermined sentence based on a priority.

Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

Abstract: A coil segment manufacturing apparatus includes a conducting wire material feeder which repeatedly feeds a conducting wire material while changing the feeding amount and interposing a processing time, a coating remover which removes an insulation coating of the conducting wire material at a removal position each time the processing time is reached, and a conducting wire material cutter which cuts the conducting wire material each time the processing time is reached.

Abstract: A coil segment manufacturing apparatus includes a conducting wire material feeder which repeatedly feeds a conducting wire material while changing the feeding amount and interposing a processing time, a coating remover which removes an insulation coating of the conducting wire material at a removal position each time the processing time is reached, and a conducting wire material cutter which cuts the conducting wire material each time the processing time is reached.

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Abstract: An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer.

Abstract: A composite material structure reinforced against stress concentration in peripheral edge portions of holes and enabled to be reduced in weight. A wing (1) is formed in a box structure. A lower surface outer plate (3) of the wing (1) includes: a center section (3b) made of metal extending in one direction and having access holes (5) formed therein; a front section (3a); and a rear section (3c) made of fiber reinforced plastics extending in the one direction and connected to both side portions of the center section (3b). As the metal used for the center section (3b), a titanium alloy or an aluminum alloy is suitable.

Abstract: A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A semiconductor device in which the field-effect mobility is not lowered even at high temperatures is provided. A semiconductor device which can be formed at low temperatures is provided. A semiconductor device with improved productivity can be provided. In the semiconductor device, there is a range of a gate voltage where the field-effect mobility increases as the temperature increases within a range of the gate voltage from 0 V to 10 V. For example, such a range of a gate voltage exists at temperatures ranging from a room temperature (25° C.) to 120° C. In the semiconductor device, the off-state current is kept extremely low (lower than or equal to the detection limit of a measurement device) within the above temperature range.

Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

Abstract: A conductive wire piece supply method includes the steps of: obtaining a conductive wire piece set using a first slot which receives conductive wire pieces, having been sent, with the conductive wire pieces vertically superposed on each other; carrying the conductive wire piece set from the first slot portion to the second slot portion; and rotating the second slot portion.

Abstract: Provided is a fluorine-containing macroinitiator, particularly a fluorine-containing macroinitiator that enables production of a fluorine-containing block copolymer containing a non-fluorine vinyl-based monomer having a long side chain. The fluorine-containing macroinitiator includes a polymer represented by the following formula (1) and having a number-average molecular weight of 3,000 to 100,000. In the following formula (1), R2, R3 and R4 are each a specific group, and Q is a polymer segment composed of a structural unit represented by the following formula (2). In the following formula (2), R1 is a hydrogen atom or a methyl group, Rf is a fluoroalkyl group having a specific structure, and k is an appropriate integer that is not 0.

Abstract: The present invention is to provide a terminal for presenting a sentence candidate that presents a candidate to improve the work efficiency and to standardize a sentence, when a report is generated. The terminal for presenting a sentence candidate 100 is capable of presenting a more appropriate sentence candidate by including a report data base 131 that stores a report including a plurality of sentences, searching the report data base by an input character, generating a report group including a plurality of reports as a search result, extracting a sentence containing a character input from the report group to generate a sentence group, and preferentially outputting a predetermined sentence based on a priority.

Abstract: Provided is a fluorine-containing macroinitiator, particularly a fluorine-containing macroinitiator that enables production of a fluorine-containing block copolymer containing a non-fluorine vinyl-based monomer having a long side chain. The fluorine-containing macroinitiator includes a polymer represented by the following formula (1) and having a number-average molecular weight of 3,000 to 100,000. In the following formula (1), R2, R3 and R4 are each a specific group, and Q is a polymer segment composed of a structural unit represented by the following formula (2). In the following formula (2), R1 is a hydrogen atom or a methyl group, Rf is a fluoroalkyl group having a specific structure, and k is an appropriate integer that is not 0.

Abstract: Provided is a fluorine-containing diblock copolymer having good water and oil repellency by using, as a raw material, a fluorine-containing (meth)acrylic ester having low bioaccumulation potential. The fluorine-containing diblock copolymer is produced by: process (A) a process for producing a fluorine-containing diblock copolymer by polymerizing a fluorine-containing (meth)acrylic ester represented by the following formula (1) in the presence of a trithiocarbonic ester compound and a radical polymerization initiator and then polymerizing a non-fluorine vinyl-based monomer, or process (B) a process for producing a fluorine-containing diblock copolymer by polymerizing a non-fluorine vinyl-based monomer in the presence of a trithiocarbonic ester compound and a radical polymerization initiator and then polymerizing a fluorine-containing (meth)acrylic ester represented by the following formula (1).

Abstract: An arrangement apparatus and an arrangement method of allowing gripping devices to grip electrical conductors by using inexpensive, simple, and small-sized configurations. A stator manufacturing apparatus for arranging coil elements in a ring shape includes: a plurality of gripping devices that are arranged in a ring shape and grip coil elements; robot arms that supply the coil elements to the gripping devices; and a turntable that integrally rotates the plurality of gripping devices. According to this, the gripping devices are rotated by the turntable is aligned in a ring shape, and thus, the coil elements are supplied to the arrangement points by the robot arms and the plurality of coil elements can be aligned in a ring shape while gripped by the gripping devices.

Abstract: A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt.

Abstract: To reduce parasitic capacitance in a semiconductor device having a transistor including an oxide semiconductor. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide semiconductor film over the first gate insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The atomic proportion of In is larger than the atomic proportion of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) in the first oxide semiconductor film, and the atomic proportion of In in the second oxide semiconductor film is smaller than that in the first oxide semiconductor film.

Abstract: A technique is needed which can amplify NK cells in vitro and prepare optimum number of NK cells for the adoptive immunotherapy. A method for amplifying NK cells is provided which comprises steps of: preparing cell population which is comprised of NK cells, removing T cells from the cell population which is comprised of NK cells, and, after removal of T cells, cultivating the remaining cells in a medium supplemented with 2500 to 2831 IU/mL of IL-2. The method for amplifying NK cells of the present invention may comprise a step of removing hematopoietic progenitor cells from the cell population. The present invention provides a pharmaceutical composition for adoptive immunotherapy, comprising NK cells which are prepared by the amplifying method of the present invention.

Abstract: The object of the present invention is to develop a technique in which NK cells having a high cytotoxic activity can be prepared with high purity from hematopoietic precursor cells without using a serum or feeder cells of an animal. A method for expanding NK cells includes the steps of expanding hematopoietic precursor cells under a single culturing condition using a medium supplemented with IL-15, SCF, IL-7 and Flt3L, and differentially inducing the cells obtained in the expanding step into NK cells under a culturing condition using a medium supplemented with IL-2. A pharmaceutical composition contains the NK cells prepared by the method for expanding NK cells of the present invention. The pharmaceutical composition of the present invention is used for treating an infectious disease and/or a cancer.