Patents by Inventor Satoru Saito

Satoru Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7417638
    Abstract: A data write circuit includes a receiver which receives pixel data with an affix of display state designating data for designating a display state; a setting section in which set are write control data containing first display state designating data for designating a specific display state and write mode designating data for designating a write mode when the data is written into the memory; and a controller which performs control to write data corresponding to the pixel data into the memory, in accordance with a write mode designated by the write mode designating data, depending on a relationship between the display state designating data and the first display state designating data.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: August 26, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Satoru Saito
  • Publication number: 20080179599
    Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer.
    Type: Application
    Filed: October 22, 2007
    Publication date: July 31, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuji YAMAGUCHI, Atsuo Isobe, Satoru Saito
  • Patent number: 7312289
    Abstract: A fluorine-containing elastomer having a copolymer composition, which comprises 50-85% by mole of (a) vinylidene fluoride, 0-25% by mole of (b) tetrafluoroethylene, 7-20% by mole of (c) perfluoro(methyl vinyl ether), 3-15% by mole of (d) CF2?CFO[CF2CF(CF3)O]nCF3 and 0.1-2% by mole of (e) RfX, where Rf is an unsaturated fluorohydrocarbon group having 2-8 carbon atoms and X is a bromine or iodine atom, can give curing products with distinguished low-temperature characteristics and solvent resistance without deteriorating the distinguished moldability and compression set characteristics proper to the fluorine-containing elastomer, and a fluorine-containing elastomer composition, which comprises 100 parts by weight of the present fluorine-containing elastomer, 0.1-10 parts by weight of an organic peroxide, 0.
    Type: Grant
    Filed: September 29, 2003
    Date of Patent: December 25, 2007
    Assignee: Unimatec Co., Ltd.
    Inventors: Satoru Saito, Jun Kanega, Satoshi Horie, Masashi Kudo
  • Patent number: 7288480
    Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: October 30, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuji Yamaguchi, Atsuo Isobe, Satoru Saito
  • Publication number: 20070117406
    Abstract: A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is provided. The method includes a first step of forming a base film over a glass substrate; a second step of forming a semiconductor film over the base film; a third step of forming, over the semiconductor film, a film preventing oxidation or nitridation of the semiconductor film into a predetermined pattern; and a fourth step of performing element isolation by radical oxidation or radical nitridation of a region of the semiconductor film, which is not covered with the predetermined pattern, at a temperature of the glass substrate lower than a strain point thereof by 100° C. or more, where radical oxidation or radical nitridation is performed over a semiconductor film placed apart from a plasma generation region, in a plasma treatment chamber with an electron temperature within the range of 0.5 to 1.
    Type: Application
    Filed: November 17, 2006
    Publication date: May 24, 2007
    Inventor: Satoru Saito
  • Publication number: 20060281318
    Abstract: Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 ?m or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.
    Type: Application
    Filed: August 24, 2006
    Publication date: December 14, 2006
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Atsuo Isobe, Satoru Saito, Saishi Fujikawa
  • Patent number: 7115488
    Abstract: Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 ?m or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: October 3, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Satoru Saito, Saishi Fujikawa
  • Publication number: 20060091398
    Abstract: It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.
    Type: Application
    Filed: October 24, 2005
    Publication date: May 4, 2006
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Atsuo Isobe, Satoru Saito
  • Publication number: 20050253178
    Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer.
    Type: Application
    Filed: April 21, 2005
    Publication date: November 17, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuji Yamaguchi, Atsuo Isobe, Satoru Saito
  • Patent number: 6953118
    Abstract: A container, convertible from a shipping configuration to a displaying configuration, includes a shipping cover and a shipping liner fitted inside the shipping cover. The shipping liner defines a plurality of slots for laterally supporting display packs. The container also includes a display base, which also serves as a lid that fits on the shipping cover after the shipping liner and display packs have been packed therein in the shipping configuration. To convert from the shipping configuration to the displaying configuration, the container is positioned with the display base on bottom, and the shipping cover is lifted from the display base, leaving the display packs neatly in the display base and the shipping liner fixed in the shipping cover.
    Type: Grant
    Filed: April 1, 2003
    Date of Patent: October 11, 2005
    Assignee: Uniden Corporation
    Inventors: Atsuo Seno, Satoru Saito
  • Publication number: 20050046743
    Abstract: An interlace image signal for four fields stored in an image memory is read out on a line-by-line basis and stored in an IP conversion data buffer. An output signal is a progressive image signal whose one horizontal period is twice that of an interlace image signal which is an input signal. Accordingly, reading of data from the IP conversion data buffer is made to correspond to one horizontal period on the output side at the time of outputting, and the signal which is read out is subjected to IP conversion and written into an output data buffer. By reading data from the output data buffer while data is being written into the output data buffer, the capacity of the output data buffer can be reduced to that corresponding to two horizontal lines.
    Type: Application
    Filed: September 2, 2004
    Publication date: March 3, 2005
    Inventor: Satoru Saito
  • Publication number: 20050048744
    Abstract: Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 ?m or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.
    Type: Application
    Filed: August 17, 2004
    Publication date: March 3, 2005
    Inventors: Atsuo Isobe, Satoru Saito, Saishi Fujikawa
  • Publication number: 20050046742
    Abstract: A background color data output determination section outputs a control signal for selecting background color data until a predetermined number of vertical synchronization signals is counted after the start of IP conversion. Based on the control signal supplied from the background color data output determination section, a buffer data/background color data selection section selects a background color for output, so that the background color is output and displayed on the screen when a progressive image signal based only on an input image signal is not prepared at the time of actuation of power source, for example.
    Type: Application
    Filed: September 2, 2004
    Publication date: March 3, 2005
    Inventor: Satoru Saito
  • Publication number: 20040223388
    Abstract: A data write circuit includes a receiver which receives pixel data with an affix of display state designating data for designating a display state; a setting section in which set are write control data containing first display state designating data for designating a specific display state and write mode designating data for designating a write mode when the data is written into the memory; and a controller which performs control to write data corresponding to the pixel data into the memory, in accordance with a write mode designated by the write mode designating data, depending on a relationship between the display state designating data and the first display state designating data.
    Type: Application
    Filed: April 28, 2004
    Publication date: November 11, 2004
    Applicant: Sanyo Electric Co, Ltd.
    Inventor: Satoru Saito
  • Publication number: 20040195148
    Abstract: A container, convertible from a shipping configuration to a displaying configuration, includes a shipping cover and a shipping liner fitted inside the shipping cover. The shipping liner defines a plurality of slots for laterally supporting display packs. The container also includes a display base, which also serves as a lid that fits on the shipping cover after the shipping liner and display packs have been packed therein in the shipping configuration. To convert from the shipping configuration to the displaying configuration, the container is positioned with the display base on bottom, and the shipping cover is lifted from the display base, leaving the display packs neatly in the display base and the shipping liner fixed in the shipping cover.
    Type: Application
    Filed: April 1, 2003
    Publication date: October 7, 2004
    Applicant: UNIDEN CORPORATION
    Inventors: Atsuo Seno, Satoru Saito
  • Publication number: 20040181022
    Abstract: A fluorine-containing elastomer having a copolymer composition, which comprises 50-85% by mole of (a) vinylidene fluoride, 0-25% by mole of (b) tetrafluoroethylene, 7-20% by mole of (c) perfluoro(methyl vinyl ether), 3-15% by mole of (d) CF2═CFO[CF2CF(CF)O]nCF3 and 0.1-2% by mole of (e) RfX, where Rf is an unsaturated fluorohydrocarbon group having 2-8 carbon atoms and X is a bromine or iodine atom, can give curing products with distinguished low-temperature characteristics and solvent resistance without deteriorating the distinguished moldability and compression set characteristics proper to the fluorine-containing elastomer, and a fluorine-containing elastomer composition, which comprises 100 parts by weight of the present fluorine-containing elastomer, 0.1-10 parts by weight of an organic peroxide, 0.
    Type: Application
    Filed: September 29, 2003
    Publication date: September 16, 2004
    Inventors: Satoru Saito, Jun Kanega, Satoshi Horie, Masashi Kudo
  • Patent number: 6626652
    Abstract: A motor-driven compressor includes a motor and a compression portion for compressing a refrigerant. The motor-driven compressor comprises an input terminal for the motor and a drive circuit for controlling a rotation speed of the motor. The input terminal of the motor passes through an opening formed through a wall of a refrigerant suction route, whereby the input terminal is secured to the wall, and extends beyond the wall. The drive circuit controls the rotation speed of the motor and has an output connector. The output connector of the drive circuit is connected directly to the input terminal to secure the drive circuit to the wall. The direct connection eliminates a need for a wire connection between the output connector and the input terminal. Moreover, methods of assembling motor-driven compressors are disclosed.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: September 30, 2003
    Assignee: Sanden Corporation
    Inventors: Shigeyuki Koyama, Satoru Saito
  • Patent number: 6602961
    Abstract: A fluorine-containing elastomer composition comprising a terpolymer of tetrafluoroethylene, perfluoro(lower alkyl vinyl ether) and perfluoro(&ohgr;-cyanoalkyl vinyl ether) and a bisaminophenyl compound represented by the following general formula as a curing agent: wherein A is an alkylidene group having 1 to 6 carbon atoms, a perfluoroalkylidene group having 1 to 10 carbon atoms, a SO2 group, an O group, a CO group, or a carbon-carbon bond capable of directly coupling two benzene rings; and X and Y each are a hydroxyl group or an amino group can give a rubbery vulcanization product with a good processability and good physical properties by a commercially available cross-linking agent free from any safety problem.
    Type: Grant
    Filed: July 11, 1995
    Date of Patent: August 5, 2003
    Inventors: Satoru Saito, Haruyoshi Tatsu, Hiroaki Murata
  • Patent number: 6599104
    Abstract: A motor-driven compressor is formed integrally with a compressor device for compressing refrigerant and a motor for driving the compressor device. The motor-driven compressor includes a drive circuit and a plurality of cooling fins. The drive circuit controls the operation of the motor. The drive circuit is provided on an outer surface of a wall of a refrigerant suction route. The plurality of cooling fins are formed on an inner surface of the wall of the refrigerant suction route. In such motor-driven compressors, the drive circuit may be sufficiently cooled without using cooling devices. As a result, providing cooling devices with the drive circuit in motor-driven compressors is no longer necessary.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: July 29, 2003
    Assignee: Sanden Corporation
    Inventors: Satoru Saito, Shinichi Ohtake
  • Patent number: D487473
    Type: Grant
    Filed: January 9, 2003
    Date of Patent: March 9, 2004
    Assignee: Sanden Corporation
    Inventors: Satoru Saito, Daisuke Hirono