Abstract: Disclosed herein is a device that includes: a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end of the first standard cells in a second direction. The field-effect transistor including a gate electrode formed on a gate wiring layer. The first power supply wiring being formed on the gate wiring layer.

Abstract: A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.

Abstract: A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.

Abstract: Disclosed herein is a device that includes: a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end of the first standard cells in a second direction. The field-effect transistor including a gate electrode formed on a gate wiring layer. The first power supply wiring being formed on the gate wiring layer.

Abstract: At the time of reading, an unselected word line voltage is fixed to a first predetermined voltage (0 V or 3 V), and when selecting a word line, a selected word line voltage is set to a second predetermined voltage (?3.5 V or 0 V). This configuration eliminates an application of a pulsed voltage to the word line at the time of reading, making it possible to reduce an influence of read disturbance. In addition, even when a voltage in a range from a power source voltage to a ground voltage or a voltage over the power source voltage is required at the time of reading, it becomes a voltage about 1.5 times an absolute value of the power source voltage. Therefore, a voltage step-up circuit having a large number of stages is not required, and as a result, it is possible to achieve a reduced operation time with a low power consumption.

Abstract: A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.

Abstract: At the time of reading, an unselected word line voltage is fixed to a first predetermined voltage (0 V or 3 V), and when selecting a word line, a selected word line voltage is set to a second predetermined voltage (?3.5 V or 0 V). This configuration eliminates an application of a pulsed voltage to the word line at the time of reading, making it possible to reduce an influence of read disturbance. In addition, even when a voltage in a range from a power source voltage to a ground voltage or a voltage over the power source voltage is required at the time of reading, it becomes a voltage about 1.5 times an absolute value of the power source voltage. Therefore, a voltage step-up circuit having a large number of stages is not required, and as a result, it is possible to achieve a reduced operation time with a low power consumption.