Abstract: The present invention relates to an electrically conductive adhesive composition including: a conductive powder (A) and a curable component (B) which has a content of 20 5 parts by mass or more when an amount of the conductive powder (A) is 100 parts by mass; and a phosphoric acid-containing curable component (C) having a general formula of formula (1) or (2), and having a molecular weight within a range of 150 to 1000, in which the phosphoric acid-containing curable component (C) has a content of 0.01 parts by mass or more and 5 parts by mass or less when a total amount of the conductive powder (A) and the 10 curable component (B) is 100 parts by mass.

Abstract: A conductive paste composition includes a conductive powder (A) and a resin component (B). A silver-based powder containing at least silver is used as the conductive powder (A), at least one of a thermosetting resin and a thermoplastic resin is used as the resin component (B). The conductive paste composition further contains a specific ester-based compound (C) having a molecular weight within a range of 150 to 2000 or a specific ether/amine-based compound (D) having a molecular weight within the range of from 150 to 30,000.

Abstract: A conductive paste composition includes a conductive powder (A) and a resin component (B). A silver-based powder containing at least silver is used as the conductive powder (A), at least one of a thermosetting resin and a thermoplastic resin is used as the resin component (B). The conductive paste composition further contains a specific ester-based compound (C) having a molecular weight within a range of 150 to 2000 or a specific ether/amine-based compound (D) having a molecular weight within the range of from 150 to 30,000.

Abstract: A thermosetting electroconductive paste composition includes an electroconductive powder (A) containing at least one of a silver-coated metal powder (A-1) and a powder of either copper or an alloy thereof (A-2), a thermosetting ingredient (B) containing at least one of an epoxy resin (B-1) and a blocked polyisocyanate compound (B-2), a hardener (C), and an alkyl- or alkenylsuccinic acid compound (D) which is a succinic acid or derivative thereof having an alkyl or alkenyl group having a carbon number of from 8 to 24 introduced into an ?-position. An amount of the alkyl- or alkenylsuccinic acid compound is 0.01 to 1.8 parts by mass per 100 parts by mass of a sum of the electroconductive powder (A) and the thermosetting ingredient (B).

Abstract: A thermosetting electroconductive paste composition includes an electroconductive powder (A) containing at least one of a silver-coated metal powder (A-1) and a powder of either copper or an alloy thereof (A-2), a thermosetting ingredient (B) containing at least one of an epoxy resin (B-1) and a blocked polyisocyanate compound (B-2), a hardener (C), and an alkyl- or alkenylsuccinic acid compound (D) which is a succinic acid or derivative thereof having an alkyl or alkenyl group having a carbon number of from 8 to 24 introduced into an ?-position. An amount of the alkyl- or alkenylsuccinic acid compound is 0.01 to 1.8 parts by mass per 100 parts by mass of a sum of the electroconductive powder (A) and the thermosetting ingredient (B).

Abstract: A multilayer wiring board includes an insulating resin layer, wirings laid on their respective opposite surfaces of the insulating resin layer, and a via-hole conductor for electrically connecting the wirings. The via-hole conductor includes metal and resin portions. The metal portion includes first metal regions including a joined unit made of copper particles for connecting the wirings, second metal regions mainly composed of, for example, tin, a tin-copper alloy, or a tin-copper intermetallic compound, and third metal regions mainly composed of bismuth and in contact with the second metal regions. The copper particles forming the joined unit are in plane contact with one another to form plane contact portions, and the second metal regions at least partially are in contact with the first metal regions.

Abstract: A wiring board includes a plurality of wirings laid via an insulating resin layer, and a via-hole conductor provided for electrically connecting the wirings. The via-hole conductor includes metal and resin portions. The metal portion includes a region made of copper particles, a first metal region mainly composed of tin, a tin-copper alloy, or a tin-copper intermetallic compound, and a second metal region mainly composed of bismuth, and has Cu/Sn of from 1.59 to 21.43. The copper particles are in contact with one another, thereby electrically connecting the wirings, and at least part of the first metal region covers around and extends over the portions where the copper particles are in plane contact with one another.

Abstract: Disclosed is a multilayer wiring board having via-hole conductors, the via-hole conductor including a metal portion and a resin portion. The metal portion includes a first metal region which includes a link of copper particles forming a path electrically connecting a first wiring and a second wiring; a second metal region mainly composed of a metal selected from the group consisting of tin, a tin-copper alloy, and a tin-copper intermetallic compound; a third metal region mainly composed of bismuth; and a fourth metal region composed of tin-bismuth solder particles. The link has plane-to-plane contact portions where the copper particles are in plane-to-plane contact with one another. At least a part of the second metal region is in contact with the first metal region. The tin-bismuth solder particles, each surrounded by the resin portion, are interspersed in the via-hole conductor.

Abstract: A multilayer wiring board having via-hole conductors which electrically connects a plurality of wirings arranged in a manner such that an insulating resin layer is placed between the wirings, wherein: the via-hole conductors each include copper, tin, and bismuth, namely, a first metal region including a link of copper particles in plane-to-plane contact with one another, the link electrically connecting the wirings, a second metal region mainly composed of one or more of tin, a tin-copper alloy, and a tin-copper intermetallic compound, and a third metal region mainly composed of bismuth; at least a part of the second metal region is in contact with the surface of the copper particles, the surface excluding the area of the plane-to-plane contact portion of the link; and the Cu, Sn, and Bi in the metal portion are of a composition having a specific weight ratio (Cu:Sn:Bi).

Abstract: A wiring board includes a plurality of wirings laid via an insulating resin layer, and a via-hole conductor provided for electrically connecting the wirings. The via-hole conductor includes metal and resin portions. The metal portion includes a region made of copper particles, a first metal region mainly composed of tin, a tin-copper alloy, or a tin-copper intermetallic compound, and a second metal region mainly composed of bismuth, and has Cu/Sn of from 1.59 to 21.43. The copper particles are in contact with one another, thereby electrically connecting the wirings, and at least part of the first metal region covers around and extends over the portions where the copper particles are in plane contact with one another.

Abstract: A multilayer wiring board includes an insulating resin layer, wirings laid on their respective opposite surfaces of the insulating resin layer, and a via-hole conductor for electrically connecting the wirings. The via-hole conductor includes metal and resin portions. The metal portion includes first metal regions including a joined unit made of copper particles for connecting the wirings, second metal regions mainly composed of, for example, tin, a tin-copper alloy, or a tin-copper intermetallic compound, and third metal regions mainly composed of bismuth and in contact with the second metal regions. The copper particles forming the joined unit are in plane contact with one another to form plane contact portions, and the second metal regions at least partially are in contact with the first metal regions.

Abstract: A flip chip mounting process includes the steps of supplying a resin (13) containing solder powder and a convection additive (12) onto a wiring substrate (10) having a plurality of electrode terminals (II), then bringing a semiconductor chip (20) having a plurality of connecting terminals (11) into contact with a surface of the supplied resin (13), and then heating the wiring substrate (10) to a temperature that enables the solder powder to melt. The heating step is carried out at a temperature that is higher than the boiling point of the convection additive (12) to allow the boiling convection additive (12) to move within the resin (12). During this heating step, the melted solder powder is allowed to self-assemble into the region between each electrode terminal (11) of the wiring substrate (10) and each connecting terminal (21) of the semiconductor chip to form an electrical connection between each electrode terminal (11) and each connecting terminal (21).

Abstract: It is intended to provide a substrate structure ensuring a shielding property and a heat discharge property of a resin part that collectively covers a plurality of electronic components and capable of downsizing, thinning, and a reduction in number of components. The substrate structure 20 of the first embodiment is provided with a substrate 21, a plurality of electronic components 22 mounted along the substrate 21, and a resin part 25 that covers the electronic components 22 and is in close contact with the substrate 21. In the substrate structure 20, the resin part 25 is provided with a reinforcing heat discharge layer 26 covering the electronic components 22 and having a heat conductivity and a reinforcing property and a shield layer 27 covering the reinforcing heat discharge layer 26, and a surface o28 of the shield layer 27 is formed into a predetermined shape corresponding to a surface structure of the display device 30 adjacent to the resin part 25.

Abstract: A process for forming bumps wherein a plurality of fine bumps are uniformly formed with high productivity. In this process, a resin (13) including solder powder and a convection additive (12) is supplied onto a substrate (10) having a plurality of electrodes (11) thereon. And subsequently the substrate (10) is heated to a temperature that enables the solder powder to melt while keeping a flat plate (14) in contact with a surface of the supplied resin (13). During this heating step, the molten solder powder is allowed to self-assemble onto the electrodes (11) so that a plurality of solder balls, resulting from the grown molten solder powder, are concurrently formed on the electrodes (11) in self-alignment manner. Finally, the flat plate (14) is moved away from the surface of the supplied resin (13), and then the resin (13) is removed to provide a substrate (10) having bumps (16) formed on the plurality of the electrodes.

Abstract: A flexible substrate includes: (i) a film; (ii) an insulating resin layer formed on each of a front face of the film and a rear face of the film, which rear face is opposite to the front face; (iii) a front-sided wiring pattern embedded in the insulating resin layer formed on the front face of the film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on the rear face of the film; and (iv) a via which is located between the front-sided wiring pattern and the rear-sided wiring pattern and serves to electrically interconnect the front-sided wiring pattern and the rear-sided wiring pattern, wherein the insulating resin layer formed on each of the front face and the rear face of the film is thicker than the film.

Abstract: A flip chip mounting process includes the steps of supplying a resin (13) containing solder powder and a convection additive (12) onto a wiring substrate (10) having a plurality of electrode terminals (11), then bringing a semiconductor chip (20) having a plurality of connecting terminals (11) into contact with a surface of the supplied resin (13), and then heating the wiring substrate (10) to a temperature that enables the solder powder to melt. The heating step is carried out at a temperature that is higher than the boiling point of the convection additive (12) to allow the boiling convection additive (12) to move within the resin (12). During this heating step, the melted solder powder is allowed to self-assemble into the region between each electrode terminal (11) of the wiring substrate (10) and each connecting terminal (21) of the semiconductor chip to form an electrical connection between each electrode terminal (11) and each connecting terminal (21).

Abstract: One of an electrode terminal of an electronic component and a connecting terminal of a wiring substrate is provided with solder beforehand, one of the wiring substrate and the electronic component is secured, and the electrode terminal and the connecting terminal are made to abut each other so that one of the wiring substrate and the electronic component, whichever is not secured, is held. The electronic component is heated so that the solder melts, and the solder is solidified while the electronic component is held, so that the electrode terminal and the connecting terminal are bonded to each other by the solder. Further, while an interval formed between the wiring substrate and the electronic component by the melted solder is being held, the electrode terminal and the connecting terminal are finely moved relative to each other with reference to a surface of the wiring substrate in an XY? direction.

Abstract: A flip chip mounting process includes the steps of supplying a resin (13) containing solder powder and a convection additive (12) onto a wiring substrate (10) having a plurality of electrode terminals (11), then bringing a semiconductor chip (20) having a plurality of connecting terminals (11) into contact with a surface of the supplied resin (13), and then heating the wiring substrate (10) to a temperature that enables the solder powder to melt. The heating step is carried out at a temperature that is higher than the boiling point of the convection additive (12) to allow the boiling convection additive (12) to move within the resin (12). During this heating step, the melted solder powder is allowed to self-assemble into the region between each electrode terminal (11) of the wiring substrate (10) and each connecting terminal (21) of the semiconductor chip to form an electrical connection between each electrode terminal (11) and each connecting terminal (21).

Abstract: A substrate structure whereby a resin part for coating a plurality of electronic components by one operation is given a shielding property and the mounting strength of electronic components with respect to the substrate is secured and an electronic device including the substrate structure are provided. A substrate structure 10 includes a substrate 11, a plurality of electronic components 12 mounted along the substrate 11, and a resin part 13 coating each electronic component 12 with a resin 18 while kept in close contact with the substrate 11. The substrate structure 10 includes a frame body 15 surrounding each electronic component 12 while kept in close contact with the substrate 11 and a lid part 17 closing an opening 16 in the frame body 15, and a resin 18 is filled inside the frame body 15.

Abstract: It is intended to provide a substrate structure ensuring a shielding property and a heat discharge property of a resin part that collectively covers a plurality of electronic components and capable of downsizing, thinning, and a reduction in number of components. The substrate structure 20 of the first embodiment is provided with a substrate 21, a plurality of electronic components 22 mounted along the substrate 21, and a resin part 25 that covers the electronic components 22 and is in close contact with the substrate 21. In the substrate structure 20, the resin part 25 is provided with a reinforcing heat discharge layer 26 covering the electronic components 22 and having a heat conductivity and a reinforcing property and a shield layer 27 covering the reinforcing heat discharge layer 26, and a surface o28 of the shield layer 27 is formed into a predetermined shape corresponding to a surface structure of the display device 30 adjacent to the resin part 25.