Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.

Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.

Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

Abstract: A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.

Abstract: A producing method and an examining method for a rectangular battery in which an impregnated state of an electrolytic solution impregnated in an electrode body is appropriately examined are provided. A producing method for the rectangular battery includes a step of impregnation examining to determining an impregnated state of the electrolytic solution in the electrode body by holding and pressing a first side wall portion and a second side wall portion of the rectangular battery to bring their inside surfaces into contact with an electrode body, bringing a transmitting probe and a receiving probe into close contact with the first side wall portion and the second side wall portion respectively, and in a state that an absorption member is placed to absorb diffused ultrasonic wave or going-around ultrasonic wave, transmitting the post-penetrated ultrasonic wave to pass through the electrode body and others, and receiving it by the receiving probe.

Abstract: The plug shell of the electrical connector includes the accommodation portion for accommodating the contact pin and the housing that holds the contact pin, the insertion port for inserting the contact pin and the housing into the accommodation portion, the lid member for closing the insertion port, and the hold mechanism for holding the lid member. The hold mechanism includes the pedestal, on which the lid member is placed, and the pair of hold pieces, which hold the lid member on the pedestal by pressing. The pair of hold pieces press the end portions of the lid member toward the pedestal, so that thereby a stress that urges the end portions to become distant from the pedestal is generated in the lid member.

Abstract: A radio frequency module includes a module substrate including major surfaces that face each other; a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed; a second base part that is at least partially comprised of a second semiconductor material having a thermal conductivity lower than the thermal conductivity of the first semiconductor material and in which an amplifier circuit is formed; and an external connection terminal disposed on or over the major surface. The first base part and the second base part are disposed on or over the major surface out of the major surfaces; and the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode.

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

Abstract: A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.

Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

Abstract: A radio-frequency module including a module substrate having a first main surface and a second main surface on opposite sides; a low-noise amplifier disposed on the second main surface; and a power amplifier circuit in a Doherty configuration. The power amplifier including a first phase circuit; a second phase circuit; a carrier amplifier disposed on the first main surface and including an input terminal connected to a first end of the first phase circuit and an output terminal connected to a first end of the second phase circuit; and a peaking amplifier disposed on the first main surface and including an input terminal connected to a second end of the first phase circuit and an output terminal connected to a second end of the second phase circuit.

Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.

Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Abstract: The present invention addresses the problem of providing a method for measuring axial clearance of a wheel bearing device, with which it is possible to make a high-precision measurement of negative axial clearance. This method comprises: a step (S02) for press-fitting an inner race (4); a first negative axial clearance measurement step (S03); a swaging step (S04); an inner-race press-in amount measurement step (S05); a first inner-race outer-diameter increment measurement step (S06); a second inner-race outer-diameter increment calculation step (S07); an outer-diameter increment difference calculation step (S08); a first axial clearance decrement calculation step (S09); a second axial clearance decrement calculation step (S10); a third axial clearance decrement calculation step (S11); and a second negative axial clearance calculation step (S12).

Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.

Abstract: At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.