Patents by Inventor Satoshi Goto

Satoshi Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RADIO FREQUENCY MODULE AND COMMUNICATION DEVICE
    Publication number: 20210288680
    Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.
    Type: Application
    Filed: March 2, 2021
    Publication date: September 16, 2021
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Hidetaka TAKAHASHI, Satoshi GOTO, Yoshiki YASUTOMO, Daerok OH, Yuuto AOKI, Yoshihiro DAIMON, Naoya MATSUMOTO
  • Power amplifying circuit
    Patent number: 11114989
    Abstract: A power amplifying circuit includes an amplifier that amplifies a radio-frequency signal and a bypass capacitor section connected to a power supply terminal for supplying a power supply voltage to the amplifier. The bypass capacitor section includes a first capacitor, a second capacitor, and a first switch circuit. The first capacitor includes a first end connected to a power supply path, and a second end. The second capacitor includes a first end connected to the second end of the first capacitor and a second end connected to ground. The first switch circuit includes a first terminal connected to the second end of the first capacitor and the first end of the second capacitor, and a second terminal connected to the ground. The first switch circuit switches between connection and non-connection between the second end of the first capacitor and the ground.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: September 7, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Goto, Hideyuki Satou, Satoshi Tanaka
  • POWER AMPLIFIER CIRCUIT
    Publication number: 20210273611
    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
    Type: Application
    Filed: May 18, 2021
    Publication date: September 2, 2021
    Inventors: Satoshi TANAKA, Satoshi ARAYASHIKI, Satoshi GOTO, Yusuke TANAKA
  • POWER AMPLIFICATION MODULE
    Publication number: 20210211106
    Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
    Type: Application
    Filed: March 24, 2021
    Publication date: July 8, 2021
    Inventors: Satoshi ARAYASHIKI, Satoshi GOTO, Satoshi TANAKA, Yasuhisa YAMAMOTO
  • Power amplifier circuit
    Patent number: 11043918
    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: June 22, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Satoshi Arayashiki, Satoshi Goto, Yusuke Tanaka
  • Power amplification module
    Patent number: 10985712
    Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: April 20, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Arayashiki, Satoshi Goto, Satoshi Tanaka, Yasuhisa Yamamoto
  • RADIO FREQUENCY MODULE AND COMMUNICATION DEVICE
    Publication number: 20210111743
    Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
    Type: Application
    Filed: October 9, 2020
    Publication date: April 15, 2021
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shigeru TSUCHIDA, Daerok OH, Takahiro KATAMATA, Satoshi GOTO, Mitsunori SAMATA, Yoshiki YASUTOMO
  • Semiconductor device
    Patent number: 10924071
    Abstract: A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: February 16, 2021
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Satoshi Goto
  • SEMICONDUCTOR DEVICE AND HIGH-FREQUENCY MODULE
    Publication number: 20210035922
    Abstract: At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.
    Type: Application
    Filed: July 30, 2020
    Publication date: February 4, 2021
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Hiroaki TOKUYA, Masahiro SHIBATA, Akihiko OZAKI, Satoshi GOTO, Fumio HARIMA, Atsushi KUROKAWA
  • SEMICONDUCTOR DEVICE
    Publication number: 20210013165
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 14, 2021
    Inventors: Hisanori NAMIE, Satoshi GOTO, Satoshi TANAKA
  • POWER AMPLIFIER CIRCUIT
    Publication number: 20200395902
    Abstract: A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.
    Type: Application
    Filed: June 11, 2020
    Publication date: December 17, 2020
    Inventors: Yuri HONDA, Satoshi GOTO, Fumio HARIMA
  • Semiconductor device
    Patent number: 10825785
    Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: November 3, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hisanori Namie, Satoshi Goto, Satoshi Tanaka
  • POWER AMPLIFICATION MODULE
    Publication number: 20200295717
    Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 17, 2020
    Inventors: Satoshi ARAYASHIKI, Satoshi GOTO, Satoshi TANAKA, Yasuhisa YAMAMOTO
  • State of charge estimation method and state of charge estimation apparatus
    Patent number: 10677850
    Abstract: A state of charge estimation method includes: measuring a voltage of a lithium ion secondary battery that is being charged at a predetermined current rate higher than or equal to a predetermined charging rate; obtaining a rate of increase in the measured voltage; and estimating a state of charge of the lithium ion secondary battery based on the rate of increase in the measured voltage and first reference data. The first reference data are data including a correlation between a state of charge of a reference lithium ion secondary battery and a rate of increase in voltage of the reference lithium ion secondary battery when the reference lithium ion secondary battery is charged at the predetermined current rate.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: June 9, 2020
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Satoshi Goto
  • POWER AMPLIFYING CIRCUIT
    Publication number: 20200169232
    Abstract: A power amplifying circuit includes an amplifier that amplifies a radio-frequency signal and a bypass capacitor section connected to a power supply terminal for supplying a power supply voltage to the amplifier. The bypass capacitor section includes a first capacitor, a second capacitor, and a first switch circuit. The first capacitor includes a first end connected to a power supply path, and a second end. The second capacitor includes a first end connected to the second end of the first capacitor and a second end connected to ground. The first switch circuit includes a first terminal connected to the second end of the first capacitor and the first end of the second capacitor, and a second terminal connected to the ground. The first switch circuit switches between connection and non-connection between the second end of the first capacitor and the ground.
    Type: Application
    Filed: November 25, 2019
    Publication date: May 28, 2020
    Inventors: Satoshi GOTO, Hideyuki SATOU, Satoshi TANAKA
  • Power amplifier module
    Patent number: 10666201
    Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: May 26, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hisanori Namie, Satoshi Goto, Satoshi Tanaka
  • ELECTRIC VACUUM CLEANING APPARATUS
    Publication number: 20200107685
    Abstract: An electric vacuum cleaning apparatus includes a station and an electric vacuum cleaner connectable/disconnectable from the station. The electric vacuum cleaner includes: a coarse-dust collecting chamber that accumulates coarse dust separated with a first separator; a filter chamber that accumulates fine dust separated with a filter; a coarse-dust waste-outlet that discharges the coarse dust from the coarse-dust collecting chamber; a fine-dust waste-outlet adjacent to the coarse-dust waste-outlet and discharges the fine dust from the filter chamber; and a waste-outlet lid that opens/closes both the coarse-dust waste-outlet and fine-dust waste-outlet together.
    Type: Application
    Filed: June 22, 2018
    Publication date: April 9, 2020
    Applicant: TOSHIBA LIFESTYLE PRODUCTS & SERVICES CORPORATION
    Inventors: Masatoshi TANAKA, Satoshi GOTO, Yukio MACHIDA
  • POWER AMPLIFIER CIRCUIT
    Publication number: 20200106391
    Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
    Type: Application
    Filed: October 1, 2019
    Publication date: April 2, 2020
    Inventors: Satoshi TANAKA, Satoshi ARAYASHIKI, Satoshi GOTO, Yusuke TANAKA
  • SEMICONDUCTOR DEVICE
    Publication number: 20200021255
    Abstract: A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.
    Type: Application
    Filed: June 13, 2019
    Publication date: January 16, 2020
    Applicant: Murata Manufacturing Co., Ltd.
    Inventor: Satoshi GOTO
  • Nonaqueous electrolyte secondary battery
    Patent number: 10374255
    Abstract: Provided is a nonaqueous electrolyte secondary battery in which the following are housed in a battery case: a nonaqueous electrolyte, a boron atom-containing oxalato complex compound, and an electrode assembly in which a positive electrode having a positive electrode active material and a negative electrode having a negative electrode active material are disposed facing each other. Here, a coat containing boron atoms originating from the oxalato complex compound is formed on the surface of the negative electrode active material, and the amount BM (?g/cm2) of the boron atom as measured based on inductively coupled plasma-atomic emission spectroscopic analysis and the intensity BA for a tricoordinate boron atom as measured based on x-ray absorption fine structure analysis satisfy 0.5?BA/BM?1.0.
    Type: Grant
    Filed: April 30, 2013
    Date of Patent: August 6, 2019
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Tomohiro Nakano, Satoshi Goto, Tomohide Sumi, Hideki Sano