Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

Abstract: A state of charge estimation method includes: measuring a voltage of a lithium ion secondary battery that is being charged at a predetermined current rate higher than or equal to a predetermined charging rate; obtaining a rate of increase in the measured voltage; and estimating a state of charge of the lithium ion secondary battery based on the rate of increase in the measured voltage and first reference data. The first reference data are data including a correlation between a state of charge of a reference lithium ion secondary battery and a rate of increase in voltage of the reference lithium ion secondary battery when the reference lithium ion secondary battery is charged at the predetermined current rate.

Abstract: A power amplifying circuit includes an amplifier that amplifies a radio-frequency signal and a bypass capacitor section connected to a power supply terminal for supplying a power supply voltage to the amplifier. The bypass capacitor section includes a first capacitor, a second capacitor, and a first switch circuit. The first capacitor includes a first end connected to a power supply path, and a second end. The second capacitor includes a first end connected to the second end of the first capacitor and a second end connected to ground. The first switch circuit includes a first terminal connected to the second end of the first capacitor and the first end of the second capacitor, and a second terminal connected to the ground. The first switch circuit switches between connection and non-connection between the second end of the first capacitor and the ground.

Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

Abstract: An electric vacuum cleaning apparatus includes a station and an electric vacuum cleaner connectable/disconnectable from the station. The electric vacuum cleaner includes: a coarse-dust collecting chamber that accumulates coarse dust separated with a first separator; a filter chamber that accumulates fine dust separated with a filter; a coarse-dust waste-outlet that discharges the coarse dust from the coarse-dust collecting chamber; a fine-dust waste-outlet adjacent to the coarse-dust waste-outlet and discharges the fine dust from the filter chamber; and a waste-outlet lid that opens/closes both the coarse-dust waste-outlet and fine-dust waste-outlet together.

Abstract: A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Abstract: A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.

Abstract: Provided is a nonaqueous electrolyte secondary battery in which the following are housed in a battery case: a nonaqueous electrolyte, a boron atom-containing oxalato complex compound, and an electrode assembly in which a positive electrode having a positive electrode active material and a negative electrode having a negative electrode active material are disposed facing each other. Here, a coat containing boron atoms originating from the oxalato complex compound is formed on the surface of the negative electrode active material, and the amount BM (?g/cm2) of the boron atom as measured based on inductively coupled plasma-atomic emission spectroscopic analysis and the intensity BA for a tricoordinate boron atom as measured based on x-ray absorption fine structure analysis satisfy 0.5?BA/BM?1.0.

Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Abstract: A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

Abstract: A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Abstract: An LED module according to the present invention includes: a mounting substrate; a first LED group including a plurality of LEDs mounted in a first light-emitting area extending in a first direction on the mounting substrate; a second LED group including a plurality of LEDs mounted in a second light-emitting area located outside the first light-emitting area; a dam material surrounding a periphery of the second light-emitting area; a first fluorescent resin coating the first LED group and causing the first light-emitting area to emit light having a first color temperature; and a second fluorescent resin coating at least the second LED group and causing the second light-emitting area to emit light having a second color temperature higher than the first color temperature, and viscosity of the first fluorescent resin is higher than viscosity of the second fluorescent resin.

Abstract: The purpose of the present invention is to provide an LED driving circuit with which it is possible to easily manage the color temperature by adjusting light.

Abstract: A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.

Abstract: The purpose of the present invention is to provide an LED driving circuit with which it is possible to easily manage the color temperature by adjusting light.