Patents by Inventor Satoshi Kudo

Satoshi Kudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8871013
    Abstract: The invention provides an ink containing a first coloring material and a second coloring material, wherein the first coloring material is a compound represented by a general formula (1), and the second coloring material is a compound represented by a general formula (2).
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: October 28, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Junichi Sakai, Satoshi Kudo, Otome Yamashita, Minako Kawabe, Takashi Saito
  • Patent number: 8814341
    Abstract: Provided is an ink capable of recording an image that is excellent in ozone resistance, hardly causes blurring or color change even in a high-humidity environment, and is excellent in humidity resistance. The ink includes a coloring material and a lithium ion. The coloring material includes a compound represented by the following general formula (I) and a content of the lithium ion in the ink is 3.5 times or more in terms of molar ratio with respect to a content of the compound represented by the general formula (I).
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: August 26, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryosuke Nagao, Jun Yoshizawa, Hideki Yamakami, Kuniaki Fujimoto, Yukako Tamanuki, Otome Yamashita, Minako Kawabe, Junichi Sakai, Satoshi Kudo
  • Publication number: 20140225189
    Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
    Type: Application
    Filed: April 23, 2014
    Publication date: August 14, 2014
    Applicants: RENESAS ELECTRONICS CORPORATION, HITACHI ULSI SYSTEMS CO., LTD.
    Inventors: Sumito NUMAZAWA, Yoshito NAKAZAWA, Masayoshi KOBAYASHI, Satoshi KUDO, Yasuo IMAI, Sakae KUBO, Takashi SHIGEMATSU, Akihiro OHNISHI, Kozo UESAWA, Kentaro OISHI
  • Patent number: 8764178
    Abstract: An object of the present invention is to provide an ink jet recording method which gives an ink excellent anti-sticking properties and can suppress the occurrence of undertrapping when recording surfaces of recording media which each have an ink-receiving layer are overlapped with each other, and to provide an ink jet recording apparatus. The ink jet recording method of forming an image on the recording medium having the ink-receiving layer by ejecting an ink from an ink jet recording head, the method including performing at least one of drying the recording medium which has the image formed thereon and humidifying a gap between the recording head and the recording medium, wherein the ink to be used for forming the image is an ink which contains water, a water-soluble organic solvent and a specific compound.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: July 1, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yukako Tamanuki, Shogo Takemoto, Kumiko Mafune, Yojiro Kojima, Satoshi Kudo, Yoshio Kinoshita, Fumihiko Mukae
  • Publication number: 20140168314
    Abstract: An aqueous ink for ink jet contains a self-dispersible pigment in which a first functional group including a phosphonic acid group and a second functional group including at least one of a carboxylic acid group and a sulfonic acid group are bonded to a particle surface, wherein a surface charge amount derived from the phosphonic acid group included in the above-described first functional group is 0.3 micromoles/m2 or more, a total surface charge amount derived from the carboxylic acid group and the sulfonic acid group included in the above-described second functional group is 1.0 micromoles/m2 or more, and a total surface charge amount derived from anionic groups included in the above-described first functional group and the above-described second functional group is 2.0 micromoles/m2 or more and 8.0 micromoles/m2 or less.
    Type: Application
    Filed: May 7, 2013
    Publication date: June 19, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kenji Moribe, Arihiro Saito, Yuki Nishino, Kuniaki Fujimoto, Satoshi Kudo
  • Patent number: 8748266
    Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: June 10, 2014
    Assignees: Renesas Electronics Corporation, Hitachi Ulsi Systems Co., Ltd.
    Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
  • Patent number: 8668321
    Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: March 11, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yojiro Kojima, Yukako Tamanuki, Shogo Takemoto, Satoshi Kudo, Yoshio Kinoshita, Kumiko Mafune
  • Publication number: 20140043407
    Abstract: The present invention provides an ink jet ink that is capable of recording an image excellent in light resistance and ozone resistance and has excellent intermittent ejection stability. The ink jet ink contains a coloring material and a water-soluble organic solvent. The coloring material contains a compound represented by the following general formula (I), the water-soluble organic solvent contains ethylene urea end an alkanediol having 4 to 6 carbon atoms, and a content A (% by mass) of the coloring material, a content B (% by mass) of the ethylene urea and a content C (% by mass) of the alkanediol having 4 to 6 carbon atoms based on a total mass of the ink satisfy relationships of 0.20?B/A?10.0 and 0.10?C/A?10.0.
    Type: Application
    Filed: July 19, 2013
    Publication date: February 13, 2014
    Inventors: Satoshi Kudo, Junichi Sakai, Masashi Ogasawara, Tetsu Iwata, Masashi Tsujimura, Takashi Saito, Masayuki Ikegami
  • Publication number: 20130335490
    Abstract: Provided is an ink capable of recording an image that is excellent in ozone resistance, hardly causes blurring or color change even in a high-humidity environment, and is excellent in humidity resistance. The ink includes a coloring material and a lithium ion. The coloring material includes a compound represented by the following general formula (I) and a content of the lithium ion in the ink is 3.5 times or more in terms of molar ratio with respect to a content of the compound represented by the general formula (I).
    Type: Application
    Filed: May 10, 2013
    Publication date: December 19, 2013
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ryosuke Nagao, Jun Yoshizawa, Hideki Yamakami, Kuniaki Fujimoto, Yukako Tamanuki, Otome Yamashita, Minako Kawabe, Junichi Sakai, Satoshi Kudo
  • Patent number: 8562739
    Abstract: A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: October 22, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Kazuhiro Harada, Satoshi Kudo
  • Publication number: 20130271523
    Abstract: The invention provides an ink containing a first coloring material and a second coloring material, wherein the first coloring material is a compound represented by a general formula (1), and the second coloring material is a compound represented by a general formula (2).
    Type: Application
    Filed: March 12, 2013
    Publication date: October 17, 2013
    Inventors: Junichi Sakai, Satoshi Kudo, Otome Yamashita, Minako Kawabe, Takashi Saito
  • Patent number: 8506708
    Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: August 13, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Masanori Fukui, Satoshi Kudo
  • Patent number: 8394198
    Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 ?m or more and 450 ?m or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.
    Type: Grant
    Filed: November 27, 2009
    Date of Patent: March 12, 2013
    Assignee: Japan Super Quartz Corporation
    Inventors: Masaki Morikawa, Jun Furukawa, Satoshi Kudo
  • Patent number: 8354713
    Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
    Type: Grant
    Filed: May 13, 2011
    Date of Patent: January 15, 2013
    Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
  • Patent number: 8328346
    Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, at least a cyan ink containing a specific dye and a magenta ink containing a specific dye are used.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: December 11, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Kudo, Kumiko Mafune, Yojiro Kojima, Yoshio Kinoshita, Yukako Tamanuki, Shogo Takemoto
  • Patent number: 8163817
    Abstract: An aqueous ink to be used together with a pigment ink containing a pigment and a polymer, wherein the aqueous ink contains a reactive component for destabilizing the dispersion state of the pigment, the dynamic surface tension of the aqueous ink at a lifetime of 30 milliseconds is 41 mN/m or more, and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less as determined by a maximum bubble pressure method.
    Type: Grant
    Filed: May 5, 2008
    Date of Patent: April 24, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yuuki Nishino, Hiroyuki Takuhara, Mikio Sanada, Daiji Okamura, Kenji Moribe, Satoshi Kudo
  • Publication number: 20120052675
    Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
    Type: Application
    Filed: November 8, 2011
    Publication date: March 1, 2012
    Applicants: HITACHI ULSI SYSTEMS CO., LTD., RENESAS ELECTRONICS CORPORATION
    Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
  • Patent number: 8123846
    Abstract: An ink jet ink providing an image having excellent lightfastness and having sticking resistance and intermittent ejection stability. The ink jet ink is characterized by containing at least a compound represented by the following general formula (I) and a compound represented by the following general formula (II).
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: February 28, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hideki Yamakami, Hiroshi Tomioka, Daiji Okamura, Mitsuru Ishii, Satoshi Kudo, Otome Mori
  • Patent number: 8087759
    Abstract: The impact accuracy of ejected droplets, the quality of printed images, and print speed can be improved in a print head having an ink channel for which the width thereof in a direction orthogonal to an ink supply direction in which ink is supplied from an ink supply port to a pressure chamber is smaller than that of a pressure chamber. In the print head, the center of a heater along the ink supply direction is offset from the center of the pressure chamber along the ink supply direction, toward the side of the pressure chamber far from the ink supply port in the ink supply direction.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: January 3, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Oikawa, Keiji Tomizawa, Mikiya Umeyama, Toru Yamane, Yuichiro Akama, Chiaki Muraoka, Tomotsugu Kuroda, Shingo Nagata, Satoshi Kudo
  • Publication number: 20110310202
    Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.
    Type: Application
    Filed: June 21, 2011
    Publication date: December 22, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yojiro Kojima, Yukako Tamanuki, Shogo Takemoto, Satoshi Kudo, Yoshio Kinoshita, Kumiko Mafune