Patents by Inventor Satoshi Kudo
Satoshi Kudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8871013Abstract: The invention provides an ink containing a first coloring material and a second coloring material, wherein the first coloring material is a compound represented by a general formula (1), and the second coloring material is a compound represented by a general formula (2).Type: GrantFiled: March 12, 2013Date of Patent: October 28, 2014Assignee: Canon Kabushiki KaishaInventors: Junichi Sakai, Satoshi Kudo, Otome Yamashita, Minako Kawabe, Takashi Saito
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Patent number: 8814341Abstract: Provided is an ink capable of recording an image that is excellent in ozone resistance, hardly causes blurring or color change even in a high-humidity environment, and is excellent in humidity resistance. The ink includes a coloring material and a lithium ion. The coloring material includes a compound represented by the following general formula (I) and a content of the lithium ion in the ink is 3.5 times or more in terms of molar ratio with respect to a content of the compound represented by the general formula (I).Type: GrantFiled: May 10, 2013Date of Patent: August 26, 2014Assignee: Canon Kabushiki KaishaInventors: Ryosuke Nagao, Jun Yoshizawa, Hideki Yamakami, Kuniaki Fujimoto, Yukako Tamanuki, Otome Yamashita, Minako Kawabe, Junichi Sakai, Satoshi Kudo
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Publication number: 20140225189Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: ApplicationFiled: April 23, 2014Publication date: August 14, 2014Applicants: RENESAS ELECTRONICS CORPORATION, HITACHI ULSI SYSTEMS CO., LTD.Inventors: Sumito NUMAZAWA, Yoshito NAKAZAWA, Masayoshi KOBAYASHI, Satoshi KUDO, Yasuo IMAI, Sakae KUBO, Takashi SHIGEMATSU, Akihiro OHNISHI, Kozo UESAWA, Kentaro OISHI
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Patent number: 8764178Abstract: An object of the present invention is to provide an ink jet recording method which gives an ink excellent anti-sticking properties and can suppress the occurrence of undertrapping when recording surfaces of recording media which each have an ink-receiving layer are overlapped with each other, and to provide an ink jet recording apparatus. The ink jet recording method of forming an image on the recording medium having the ink-receiving layer by ejecting an ink from an ink jet recording head, the method including performing at least one of drying the recording medium which has the image formed thereon and humidifying a gap between the recording head and the recording medium, wherein the ink to be used for forming the image is an ink which contains water, a water-soluble organic solvent and a specific compound.Type: GrantFiled: May 26, 2011Date of Patent: July 1, 2014Assignee: Canon Kabushiki KaishaInventors: Yukako Tamanuki, Shogo Takemoto, Kumiko Mafune, Yojiro Kojima, Satoshi Kudo, Yoshio Kinoshita, Fumihiko Mukae
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Publication number: 20140168314Abstract: An aqueous ink for ink jet contains a self-dispersible pigment in which a first functional group including a phosphonic acid group and a second functional group including at least one of a carboxylic acid group and a sulfonic acid group are bonded to a particle surface, wherein a surface charge amount derived from the phosphonic acid group included in the above-described first functional group is 0.3 micromoles/m2 or more, a total surface charge amount derived from the carboxylic acid group and the sulfonic acid group included in the above-described second functional group is 1.0 micromoles/m2 or more, and a total surface charge amount derived from anionic groups included in the above-described first functional group and the above-described second functional group is 2.0 micromoles/m2 or more and 8.0 micromoles/m2 or less.Type: ApplicationFiled: May 7, 2013Publication date: June 19, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Kenji Moribe, Arihiro Saito, Yuki Nishino, Kuniaki Fujimoto, Satoshi Kudo
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Patent number: 8748266Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: GrantFiled: November 8, 2011Date of Patent: June 10, 2014Assignees: Renesas Electronics Corporation, Hitachi Ulsi Systems Co., Ltd.Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Patent number: 8668321Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.Type: GrantFiled: June 21, 2011Date of Patent: March 11, 2014Assignee: Canon Kabushiki KaishaInventors: Yojiro Kojima, Yukako Tamanuki, Shogo Takemoto, Satoshi Kudo, Yoshio Kinoshita, Kumiko Mafune
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Publication number: 20140043407Abstract: The present invention provides an ink jet ink that is capable of recording an image excellent in light resistance and ozone resistance and has excellent intermittent ejection stability. The ink jet ink contains a coloring material and a water-soluble organic solvent. The coloring material contains a compound represented by the following general formula (I), the water-soluble organic solvent contains ethylene urea end an alkanediol having 4 to 6 carbon atoms, and a content A (% by mass) of the coloring material, a content B (% by mass) of the ethylene urea and a content C (% by mass) of the alkanediol having 4 to 6 carbon atoms based on a total mass of the ink satisfy relationships of 0.20?B/A?10.0 and 0.10?C/A?10.0.Type: ApplicationFiled: July 19, 2013Publication date: February 13, 2014Inventors: Satoshi Kudo, Junichi Sakai, Masashi Ogasawara, Tetsu Iwata, Masashi Tsujimura, Takashi Saito, Masayuki Ikegami
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Publication number: 20130335490Abstract: Provided is an ink capable of recording an image that is excellent in ozone resistance, hardly causes blurring or color change even in a high-humidity environment, and is excellent in humidity resistance. The ink includes a coloring material and a lithium ion. The coloring material includes a compound represented by the following general formula (I) and a content of the lithium ion in the ink is 3.5 times or more in terms of molar ratio with respect to a content of the compound represented by the general formula (I).Type: ApplicationFiled: May 10, 2013Publication date: December 19, 2013Applicant: CANON KABUSHIKI KAISHAInventors: Ryosuke Nagao, Jun Yoshizawa, Hideki Yamakami, Kuniaki Fujimoto, Yukako Tamanuki, Otome Yamashita, Minako Kawabe, Junichi Sakai, Satoshi Kudo
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Patent number: 8562739Abstract: A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.Type: GrantFiled: December 28, 2009Date of Patent: October 22, 2013Assignee: Japan Super Quartz CorporationInventors: Kazuhiro Harada, Satoshi Kudo
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Publication number: 20130271523Abstract: The invention provides an ink containing a first coloring material and a second coloring material, wherein the first coloring material is a compound represented by a general formula (1), and the second coloring material is a compound represented by a general formula (2).Type: ApplicationFiled: March 12, 2013Publication date: October 17, 2013Inventors: Junichi Sakai, Satoshi Kudo, Otome Yamashita, Minako Kawabe, Takashi Saito
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Patent number: 8506708Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less.Type: GrantFiled: October 28, 2009Date of Patent: August 13, 2013Assignee: Japan Super Quartz CorporationInventors: Masanori Fukui, Satoshi Kudo
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Patent number: 8394198Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 ?m or more and 450 ?m or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.Type: GrantFiled: November 27, 2009Date of Patent: March 12, 2013Assignee: Japan Super Quartz CorporationInventors: Masaki Morikawa, Jun Furukawa, Satoshi Kudo
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Patent number: 8354713Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: GrantFiled: May 13, 2011Date of Patent: January 15, 2013Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Patent number: 8328346Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, at least a cyan ink containing a specific dye and a magenta ink containing a specific dye are used.Type: GrantFiled: June 21, 2011Date of Patent: December 11, 2012Assignee: Canon Kabushiki KaishaInventors: Satoshi Kudo, Kumiko Mafune, Yojiro Kojima, Yoshio Kinoshita, Yukako Tamanuki, Shogo Takemoto
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Patent number: 8163817Abstract: An aqueous ink to be used together with a pigment ink containing a pigment and a polymer, wherein the aqueous ink contains a reactive component for destabilizing the dispersion state of the pigment, the dynamic surface tension of the aqueous ink at a lifetime of 30 milliseconds is 41 mN/m or more, and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less as determined by a maximum bubble pressure method.Type: GrantFiled: May 5, 2008Date of Patent: April 24, 2012Assignee: Canon Kabushiki KaishaInventors: Yuuki Nishino, Hiroyuki Takuhara, Mikio Sanada, Daiji Okamura, Kenji Moribe, Satoshi Kudo
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Publication number: 20120052675Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: ApplicationFiled: November 8, 2011Publication date: March 1, 2012Applicants: HITACHI ULSI SYSTEMS CO., LTD., RENESAS ELECTRONICS CORPORATIONInventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Ink jet ink, ink jet recording method, ink cartridge, recording unit and ink jet recording apparatus
Patent number: 8123846Abstract: An ink jet ink providing an image having excellent lightfastness and having sticking resistance and intermittent ejection stability. The ink jet ink is characterized by containing at least a compound represented by the following general formula (I) and a compound represented by the following general formula (II).Type: GrantFiled: February 20, 2009Date of Patent: February 28, 2012Assignee: Canon Kabushiki KaishaInventors: Hideki Yamakami, Hiroshi Tomioka, Daiji Okamura, Mitsuru Ishii, Satoshi Kudo, Otome Mori -
Patent number: 8087759Abstract: The impact accuracy of ejected droplets, the quality of printed images, and print speed can be improved in a print head having an ink channel for which the width thereof in a direction orthogonal to an ink supply direction in which ink is supplied from an ink supply port to a pressure chamber is smaller than that of a pressure chamber. In the print head, the center of a heater along the ink supply direction is offset from the center of the pressure chamber along the ink supply direction, toward the side of the pressure chamber far from the ink supply port in the ink supply direction.Type: GrantFiled: June 17, 2009Date of Patent: January 3, 2012Assignee: Canon Kabushiki KaishaInventors: Masaki Oikawa, Keiji Tomizawa, Mikiya Umeyama, Toru Yamane, Yuichiro Akama, Chiaki Muraoka, Tomotsugu Kuroda, Shingo Nagata, Satoshi Kudo
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Publication number: 20110310202Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, an ink containing a specified dye represented by general formula (I) and a water-soluble organic compound having an inorganic-organic balance value of 1.4 or more to 2.7 or less is used.Type: ApplicationFiled: June 21, 2011Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Yojiro Kojima, Yukako Tamanuki, Shogo Takemoto, Satoshi Kudo, Yoshio Kinoshita, Kumiko Mafune