Patents by Inventor Satoshi Kudo
Satoshi Kudo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110310164Abstract: An ink jet recording method includes an image formation step of forming an image on a recording medium having an ink-receiving layer by ejecting an ink from an ink jet recording head and a humidification step of humidifying a gap between the recording head and the recording medium, in which in the image formation step, at least a cyan ink containing a specific dye and a magenta ink containing a specific dye are used.Type: ApplicationFiled: June 21, 2011Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Satoshi Kudo, Kumiko Mafune, Yojiro Kojima, Yoshio Kinoshita, Yukako Tamanuki, Shogo Takemoto
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Publication number: 20110310162Abstract: An object of the present invention is to provide an ink jet recording method which gives an ink excellent anti-sticking properties and can suppress the occurrence of undertrapping when recording surfaces of recording media which each have an ink-receiving layer are overlapped with each other, and to provide an ink jet recording apparatus. The ink jet recording method of forming an image on the recording medium having the ink-receiving layer by ejecting an ink from an ink jet recording head, the method including performing at least one of drying the recording medium which has the image formed thereon and humidifying a gap between the recording head and the recording medium, wherein the ink to be used for forming the image is an ink which contains water, a water-soluble organic solvent and a specific compound.Type: ApplicationFiled: May 26, 2011Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Yukako Tamanuki, Shogo Takemoto, Kumiko Mafune, Yojiro Kojima, Satoshi Kudo, Yoshio Kinoshita, Fumihiko Mukae
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Patent number: 8076202Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: GrantFiled: March 15, 2010Date of Patent: December 13, 2011Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Patent number: 8052251Abstract: An ink jet recording head includes an element substrate; a plurality of ejection outlets, provided on the element substrate, for ejecting ink in a direction perpendicular to the element substrate; and a nozzle formation member having a plurality of ink flow paths which are in fluid communication with the ejection outlets, respectively. The ink flow paths are arranged at a density higher than 1200 dpi in an arranging direction of the ejection outlets and widths of flow passage walls forming the ink flow paths are smaller than heights of the ink flow paths and are smaller than widths of the ink flow paths.Type: GrantFiled: August 7, 2007Date of Patent: November 8, 2011Assignee: Canon Kabushiki KaishaInventors: Kiyomitsu Kudo, Yukuo Yamaguchi, Genji Inada, Mikiya Umeyama, Masaru Iketani, Satoshi Kudo, Yuichiro Akama, Chiaki Muraoka, Satoshi Kimura
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Patent number: 8029612Abstract: The present invention provides an ink jet ink, which gives a superior lightfastness to an ink image, has a superior sticking resistance and intermittent ejection stability, and gives a preferable color tone to the image. The ink includes an azo-based dye represented by formula (I) and a water-soluble organic solvent represented by bis(2-hydroxyethyl)sulfone represented by formula (II).Type: GrantFiled: February 20, 2009Date of Patent: October 4, 2011Assignee: Canon Kabushiki KaishaInventors: Mitsuru Ishii, Hiroshi Tomioka, Daiji Okamura, Hideki Yamakami, Satoshi Kudo, Otome Mori
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Patent number: 8016932Abstract: An aqueous ink used together with a black ink containing a self-dispersion pigment, wherein the aqueous ink contains a reactive component for destabilizing the dispersion state of the self-dispersion pigment, the dynamic surface tension of the aqueous ink at a lifetime of 30 milliseconds is 41 mN/m or more, and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less as determined by a maximum bubble pressure method.Type: GrantFiled: May 5, 2008Date of Patent: September 13, 2011Assignee: Canon Kabushiki KaishaInventors: Daiji Okamura, Hiroyuki Takuhara, Yuuki Nishino, Mikio Sanada, Kenji Moribe, Satoshi Kudo
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Publication number: 20110215398Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: ApplicationFiled: May 13, 2011Publication date: September 8, 2011Applicants: RENESAS ELECTRONICS CORPORATION, HITACHI ULSI SYSTEMS CO., LTD.Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Patent number: 8007077Abstract: An inkjet head includes a recording element substrate, on which sets of energy generating elements generating energy to discharge ink and a supply port supplying ink to discharge ports are arranged, and an orifice plate including the discharge ports. The sets include a set having a first supply port disposed at a first edge of the substrate and a set having a second supply port disposed at a second edge of the substrate opposite the first edge. The distance between the second edge and the second supply port is shorter than the distance between the first edge and the first supply port. A contact area between the substrate and second channel walls that form second ink channels communicating with the second supply port is larger than the contact area between the substrate and first channel walls that form first ink channels communicating with the first supply port.Type: GrantFiled: December 11, 2008Date of Patent: August 30, 2011Assignee: Canon Kabushiki KaishaInventors: Satoshi Kudo, Genji Inada
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Patent number: 7988277Abstract: An ink set is provided which can suppress bleeding irrespective of the type of recording medium. The ink set includes a plurality of aqueous inks each containing a dye, and has at least a first aqueous ink containing a dye, wherein the difference between the dynamic surface tension of the first aqueous ink at a lifetime of 50 milliseconds and the dynamic surface tension of the first aqueous ink at a lifetime of 500 milliseconds is 7 mN/m or more; and, between the first aqueous ink and at least one type of aqueous ink except the first aqueous ink included in the ink set, dynamic surface tension ?a (mN/m) of an ink A having relatively higher lightness at a lifetime of 500 milliseconds and dynamic surface tension ?b (mN/m) of an ink B having relatively lower lightness at a lifetime of 500 milliseconds satisfy ?5?(?a??b)?3.Type: GrantFiled: May 7, 2008Date of Patent: August 2, 2011Assignee: Canon Kabushiki KaishaInventors: Kenji Moribe, Satoshi Kudo, Mikio Sanada, Hideki Yamakami
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Patent number: 7878643Abstract: An aqueous ink contains at least an aqueous medium, a surfactant, and a dye. The aqueous medium includes only water and at least one water-soluble organic compound(s) and the static surface tension of the aqueous medium is from 45 mN/m or more to 57 mN/m or less. The dynamic surface tension of the aqueous ink satisfies the following conditions: (1) The dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds is from 42 mN/m or more to less than 49 mN/m; (2) The dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less; and (3) A difference between the dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is 7 mN/m or more.Type: GrantFiled: May 7, 2008Date of Patent: February 1, 2011Assignee: Canon Kabushiki KaishaInventors: Satoshi Kudo, Kenji Moribe
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Patent number: 7845766Abstract: An inkjet recording head includes a recording-element substrate having arranged therein multiple sets of nozzles that discharge ink, energy-generating elements that generate energy used for discharging the ink, and supply ports that supply the ink to the nozzles; and a sealant disposed around the recording-element substrate. The supply ports include a first supply port disposed near a first edge of the recording-element substrate and a second supply port disposed near a second edge of the recording-element substrate, the second edge being opposite to the first edge as viewed in the arrangement direction of the multiple sets. As viewed in the arrangement direction, a distance between the second edge and the second supply port is shorter than a distance between the first edge and the first supply port, and a volume of the sealant near the second edge is smaller than a volume of the sealant near the first edge.Type: GrantFiled: June 24, 2008Date of Patent: December 7, 2010Assignee: Canon Kabushiki KaishaInventors: Satoshi Kimura, Genji Inada, Torachika Osada, Keisuke Matsuo, Satoshi Kudo, Yukuo Yamaguchi
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Publication number: 20100225707Abstract: An aqueous ink contains at least an aqueous medium, a surfactant, and a dye. The aqueous medium includes only water and at least one water-soluble organic compound(s) and the static surface tension of the aqueous medium is from 45 mN/m or more to 57 mN/m or less. The dynamic surface tension of the aqueous ink satisfies the following conditions: (1) The dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds is from 42 mN/m or more to less than 49 mN/m; (2) The dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less; and (3) A difference between the dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is 7 mN/m or more.Type: ApplicationFiled: May 7, 2008Publication date: September 9, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Satoshi Kudo, Kenji Moribe
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Publication number: 20100173461Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.Type: ApplicationFiled: March 15, 2010Publication date: July 8, 2010Applicants: RENESAS TECHNOLOGY CORP., HITACHI ULSI SYSTEMS CO., LTD.Inventors: Sumito Numazawa, Yoshito Nakazawa, Masayoshi Kobayashi, Satoshi Kudo, Yasuo Imai, Sakae Kubo, Takashi Shigematsu, Akihiro Ohnishi, Kozo Uesawa, Kentaro Oishi
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Publication number: 20100162947Abstract: A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.Type: ApplicationFiled: December 28, 2009Publication date: July 1, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Kazuhiro HARADA, Satoshi KUDO
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Publication number: 20100147213Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.Type: ApplicationFiled: December 8, 2009Publication date: June 17, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Kazuhiro HARADA, Masaki MORIKAWA, Satoshi KUDO
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Patent number: 7735957Abstract: To provide a suction recovery method of an ink jet printing apparatus by which ink can be securely filled to an ink flow path and a nozzle while minimizing an amount of ink discharge during a suction recovery to prevent an adverse effect such as invited bubbles. The suction recovery method firstly performs the first suction step for generating a negative pressure for sucking a filter section for separating bubbles from the filter section. Thereafter, a second suction step is performed to generate a negative pressure for sucking an ink in the ink flow path and a large nozzle. Thereafter, a third suction step is performed to suck ink from a small nozzle.Type: GrantFiled: April 13, 2007Date of Patent: June 15, 2010Assignee: Canon Kabushiki KaishaInventors: Satoshi Kudo, Yukuo Yamaguchi
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Publication number: 20100132608Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 ?m or more and 450 ?m or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.Type: ApplicationFiled: November 27, 2009Publication date: June 3, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Masaki MORIKAWA, Jun FURUKAWA, Satoshi KUDO
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Publication number: 20100107965Abstract: A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less.Type: ApplicationFiled: October 28, 2009Publication date: May 6, 2010Applicant: JAPAN SUPER QUARTZ CORPORATIONInventors: Masanori FUKUI, Satoshi KUDO, Masaki MORIKAWA
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Aqueous ink, ink jet recording method, ink cartridge, recording unit and ink jet recording apparatus
Patent number: 7699924Abstract: Provided herein is an aqueous ink, which is excellent in both image density and fixing ability irrespective of the kind of a recording medium even when the volume of an ink droplet is small and has such excellent properties that white stripes are not caused even when high-speed recording is conducted. The aqueous ink comprises at least water, a water-soluble organic solvent, a water-insoluble coloring material, a surfactant and a poor medium for the water-insoluble coloring material and/or a salt. The dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds determined by a maximum bubble pressure method is higher than 47 mN/m, and the dynamic surface tension at a lifetime of 5,000 milliseconds determined by the maximum bubble pressure method is 38 mN/m or lower.Type: GrantFiled: September 24, 2007Date of Patent: April 20, 2010Assignee: Canon Kabushiki KaishaInventors: Kumiko Mafune, Mikio Sanada, Kenji Moribe, Tomonari Watanabe, Daiji Okamura, Satoshi Kudo, Fumiharu Nakamura -
Patent number: 7695944Abstract: A method for producing a phospholipid using transphosphatidylation, which comprises homogenizing a mixture of a raw material phospholipid, a hydroxyl-containing acceptor, phospholipase D, and water in the absence of an organic solvent to obtain a homogenized mixture; and subjecting the homogenized mixture to a transphosphatidylation reaction at 15° C. to 65° C. The homogenized mixture has a lamellar lyotropic liquid crystal structure. An objective phospholipid can be obtained from the homogenized mixture through transphosphatidylation without using an organic solvent or calcium.Type: GrantFiled: January 17, 2007Date of Patent: April 13, 2010Assignee: Kabushiki Kaisha Yakult HonshaInventors: Masashi Sakai, Rika Ebina, Hideyuki Yamatoya, Satoshi Kudo