Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction.

Abstract: When the value of a power supply voltage (VDD) becomes a first threshold value or higher, a first start-up circuit (20) causes a band gap reference circuit (10) to start a stable operation and a first voltage value (VA) is output from the band gap reference circuit (10). When the value of the power supply voltage becomes a second threshold value or higher which is greater than the first threshold, a second start-up circuit (40) turns on a PMOS transistor (MP3) of a voltage dividing circuit (30), and a second voltage value (VB) output from the voltage dividing circuit (30) becomes a value, which is derived by dividing the value of the power supply voltage according to the resistance ratio of resistors (R31, R32). From a voltage comparison circuit (50), a reset level voltage value is output when the second voltage value (VB) is smaller than the first voltage value (VA), and a power-supply voltage level voltage value is output if the second voltage value (VB) becomes the first voltage value (VA) or higher.

Abstract: A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.

Abstract: A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.

Abstract: A light-collecting type liquid crystal display device capable of displaying an image properly is provided. The liquid crystal display device 100 includes a liquid crystal panel 10; an irradiation section 31, a control device 61, and a plate-like member 20 attached to a part (10a) of the liquid crystal panel 10. A light guiding section 40 for collecting natural light 51 and propagating the light is located on a first surface 21 of the plate-like member 20; and the light guiding section 40 is connected to the irradiation section 31. A plurality of optical sensors 46 are provided on the first surface 21 of the plate-like member 20. The irradiation section 31 includes a plurality of LED elements 30. The control device 61 is connected to an LED driving section 63. The control device 61 is connected to the optical sensors 46.

Abstract: A method of manufacturing a magnetic head, including a magneto resistance effect (MR) element that reads a magnetic recording medium, is disclosed. A multilayer film is formed on a shield layer. Unnecessary portions of the multilayer film are removed from both sides of the MR element in a first direction orthogonal to a lamination direction of the multilayer film and parallel to the MR element surface facing the magnetic recording medium. An insulating layer is formed on a surface exposed by removal of the unnecessary portions. An integrated soft magnetic layer covering both sides of the MR element in the first direction and an upper side of the MR element is formed, thereby configuring a second shield layer. An anisotropy application layer is formed on the second shield layer, thereby providing exchange anisotropy to the soft magnetic layer, and magnetizing the soft magnetic layer in a predetermined direction.

Abstract: Provided are a transmission device, a receiving device, and a communication system having a simple configuration and capable of reliably executing the confirmation of a changed bit rate. The communication system 1 sends, to the receiving device 3, a serial data signal Sdata that is set as a constant value across a period of a constant multiple of a cycle of the clock when a bit rate of a serial data signal Sdata in the transmission device 2 is changed. The receiving device 3 that received the serial data signal Sdata receives training data Tdata from the transmission device 2 when it is determined that the serial data signal Sdata is a constant value across a period of a constant multiple of a cycle of the clock, and proceeds to the processing of confirming the changed bit rate.

Abstract: A magnetic head that reads information of a magnetic recording medium is provided. The magnetic head according to one embodiment includes: an MR element, formed with multilayer films, of which an electrical resistance changes according to an external magnetic field; a first shield layer that is disposed on a lower side in an lamination direction of the MR element; a second shield layer that is disposed on an upper side in the lamination direction of the MR element, and that applies voltage to the MR element together with the first shield layer; and side shield layers that are disposed on both sides of the MR element in a truck width direction. The side shield layers include soft magnetic layers and hard magnetic layers magnetized in a predetermined direction.

Abstract: A method of manufacturing a magnetic head that includes a magneto resistance effect (MR) element of which an electrical resistance changes according to an external magnetic field and shield layers surrounding the MR element, and that reads information of a magnetic recording medium is provided.

Abstract: A magnetic field detecting element has a first lower layer, a second lower layer, a tunnel barrier layer, and an upper layer, wherein the first lower layer, the second lower layer, the tunnel barrier layer, and the upper layer are stacked adjacent to each other in this order, the first lower layer is formed in an amorphous state; and the second lower layer is made of cobalt, iron, nickel or a combination thereof and that is formed in a substantially amorphous state, the second lower layer being in touch with the first lower layer and the tunnel barrier layer on both sides and a film thickness of the second lower layer is approximately between 0.2 and 1.5 nm.

Abstract: In order to constitute a domain name system obtained by providing and utilizing a DNS service by using a self-supporting (not rented) DDNS server in a dynamic IP address environment, a DDNS server inside a network of a central site and routers which are DDNS clients inside networks of other sites are provided. The DDNS server includes: a means for registering a relationship between domain names of the DDNS clients and global addresses of the DDNS client; a means for responding to a request for resolving a name from the DDNS client; and a means which, at a time when a global address of the DDNS server is updated, notifies DDNS server information including the global address of the DDNS server to the DDNS client. Moreover, the DDNS client includes: a means for registering (updating) the global address of the DDNS server when the DDNS server information is notified; and a means for issuing a request for resolving a name to the DDNS server.

Abstract: A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.

Abstract: A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.

Abstract: An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.

Abstract: When the value of a power supply voltage (VDD) becomes a first threshold value or higher, a first start-up circuit (20) causes a band gap reference circuit (10) to start a stable operation and a first voltage value (VA) is output from the band gap reference circuit (10). When the value of the power supply voltage becomes a second threshold value or higher which is greater than the first threshold, a second start-up circuit (40) turns on a PMOS transistor (MP3) of a voltage dividing circuit (30), and a second voltage value (VB) output from the voltage dividing circuit (30) becomes a value, which is derived by dividing the value of the power supply voltage according to the resistance ratio of resistors (R31, R32). From a voltage comparison circuit (50), a reset level voltage value is output when the second voltage value (VB) is smaller than the first voltage value (VA), and a power-supply voltage level voltage value is output if the second voltage value (VB) becomes the first voltage value (VA) or higher.

Abstract: A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface.

Abstract: A reproducing method of reproducing magnetic information written in each of bits of a recording medium using a magnetic head having a reading element configured to measure external magnetic field intensity includes moving, measuring and specifying steps. In the moving step, the magnetic head moves to a position where the reading element covers two bits, one bit having known magnetic information, the other bit being adjacent to the one bit and having unknown magnetic information. In the measuring step, the reading element measures magnetic field intensity coming from the recording medium. In the specifying step, magnetic information of the bit having the unknown magnetic information is specified based on the magnetic field intensity measured in the measuring step and magnetic information of the bit having the known magnetic information.

Abstract: A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.