Abstract: A TMR element includes a lower magnetic layer, an upper magnetic layer, and a tunnel barrier layer of crystalline insulation material sandwiched between the lower magnetic layer and the upper magnetic layer. The lower magnetic layer includes a first magnetic layer and a second magnetic layer sandwiched between the first magnetic layer and the tunnel barrier layer. The second magnetic layer is formed from a magnetic material containing at least one of Fe, Co and Ni.

Abstract: The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer.

Abstract: The method of fabricating an exchange-coupling film in accordance with the present invention comprises a multilayer body forming step of forming a multilayer body having an antiferromagnetic layer and a ferromagnetic layer laminated on the antiferromagnetic layer; and an annealing step of annealing the multilayer body in a magnetic field with a maximum temperature higher than a blocking temperature of the multilayer body by 15 to 60° C.

Abstract: A magnetic sensor includes: a first and a second magnetoresistive elements each including: a magnetization free layer; a nonmagnetic spacing layer; a magnetization pinned layer having one or more first layers of a first group of ferromagnetic layers and one or more second layers of a second group of ferromagnetic layers, in which the first layer and the second layer are stacked alternately with a nonmagnetic coupling layer in between, and so antiferromagnetically coupled to each other as to have opposite magnetizations to each other; and an antiferromagnetic layer pinning magnetization orientation in the one or more first and the second layers. The first layers in the first magnetoresistive element are one more in number than that of the one or more second layers. The number of the one or more first layers and that of the one or more second layers in the second magnetoresistive element are equal.

Abstract: A reproducing method of reproducing magnetic information written in each of bits of a recording medium using a magnetic head having a reading element configured to measure external magnetic field intensity includes moving, measuring and specifying steps. In the moving step, the magnetic head moves to a position where the reading element covers two bits, one bit having known magnetic information, the other bit being adjacent to the one bit and having unknown magnetic information. In the measuring step, the reading element measures magnetic field intensity coming from the recording medium. In the specifying step, magnetic information of the bit having the unknown magnetic information is specified based on the magnetic field intensity measured in the measuring step and magnetic information of the bit having the known magnetic information.

Abstract: A vapor lock in a fuel pump can be prevented by reducing the formation of vapor within the fuel. A first group of concavities may be formed in an inner circumferential region of an intake side face of an impeller, and a second group of concavities may be formed concentrically in a region outside of the first group of concavities. A third group of concavities that communicates with the second group of concavities may be formed in a discharge side face of the impeller. The impeller is housed within a casing. A first groove that faces the first group of concavities and a second groove that faces the second group of concavities may be formed in the face of the casing that faces the intake side face of the impeller. A third groove that faces the third group of concavities may be formed in the face of the casing that faces the discharge side face of the impeller.

Abstract: Provided are a transmission device, a receiving device, and a communication system having a simple configuration and capable of reliably executing the confirmation of a changed bit rate. The communication system 1 sends, to the receiving device 3, a serial data signal Sdata that is set as a constant value across a period of a constant multiple of a cycle of the clock when a bit rate of a serial data signal Sdata in the transmission device 2 is changed. The receiving device 3 that received the serial data signal Sdata receives training data Tdata from the transmission device 2 when it is determined that the serial data signal Sdata is a constant value across a period of a constant multiple of a cycle of the clock, and proceeds to the processing of confirming the changed bit rate.

Abstract: A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.

Abstract: An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that are disposed in this order, the first ferromagnetic layer being closest to the antiferromagnetic layer. The first ferromagnetic layer is made of a ferromagnetic material and has a face-centered cubic structure. The second ferromagnetic layer is made of only iron or an alloy containing x atomic % cobalt and (100?x) atomic % iron, wherein x is greater than zero and smaller than or equal to 60. The third ferromagnetic layer is made of an alloy containing y atomic % cobalt and (100?y) atomic % iron, wherein y is within a range of 65 to 80 inclusive. The antiferromagnetic layer and the first ferromagnetic layer are exchange-coupled to each other. The third and fourth ferromagnetic layers are antiferromagnetically coupled to each other.

Abstract: A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.

Abstract: To provide a transmitting apparatus capable of suppressing the fluctuation of a common mode potential and performing high-speed, long-distance signal transmission. The transmitting apparatus has a main buffer circuit and a pre-emphasis buffer circuit 20. The pre-emphasis buffer circuit 20, which has a switch circuit 21, a first current source 22, and a second current source 23, uses the switch circuit 21 to output a current signal having the same direction as an output current of the main buffer circuit 10 during a certain time interval starting from a time point when the level of data to be transmitted changes, and brings the output terminals 201, 202 to a High-Z state during a time interval when the level is constant after a lapse of the abovementioned certain time interval.

Abstract: A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a tunnel barrier layer having a three-layered structure of a first crystalline layer, a crystalline semiconductor layer and a second crystalline insulation layer stacked in this order.

Abstract: A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.

Abstract: A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.

Abstract: A tunneling magneto-resistive element includes: a tunneling magneto-resistive film including an antiferromagnetic layer, a pinned layer, a barrier layer and a free layer; and a lower magnetic shielding film disposed below the tunneling magneto-resistive film with respect to a lamination direction. The barrier layer is constituted of magnesium oxide. The lower magnetic shielding film has a multi-layer structure including a crystalline layer and an amorphous layer disposed above the crystalline layer with respect to the lamination direction. The crystalline layer contains at least one crystal grain having a grain size of 500 nm or more.

Abstract: A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided

Abstract: An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.

Abstract: An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 ?-?m2 inclusive.

Abstract: The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via an intermediate layer with a thickness of at least 2 nm, and a pinned magnetic layer laminated on the antiferromagnetic layer.

Abstract: A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.