Abstract: An electromagnetic wave detector includes a semiconductor layer, an insulating layer disposed on the semiconductor layer and having an opening, a two-dimensional material layer extending from on the opening to on the insulating layer, including a connection part in contact with a peripheral part of the insulating layer facing the opening, and electrically connected to the semiconductor layer, a first electrode part disposed on the insulating layer and electrically connected to the two-dimensional material layer, a second electrode part electrically connected to the semiconductor layer, and a unipolar barrier layer disposed between the semiconductor layer and the connection part of the two-dimensional material layer and electrically connected to each of the semiconductor layer and the two-dimensional material layer.

Abstract: An electromagnetic wave detector includes at least one photoelectric conversion element and a plasmon filter disposed so as to be opposite to the at least one photoelectric conversion element. A plurality of through-holes are periodically made in the plasmon filter. The at least one photoelectric conversion element includes a semiconductor layer including a region overlapping with at least one through-hole in the plurality of through-holes in planar view, an insulating layer formed so as to cover a part of the region, a two-dimensional material layer that is disposed on the other portion of the region and the insulating layer and electrically connected to the other portion of the region, a first electrode portion electrically connected to the two-dimensional material layer, and a second electrode portion electrically connected to the semiconductor layer.

Abstract: An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer, a first electrode portion, a second electrode portion, and a ferroelectric layer. Two-dimensional material layer is electrically connected to semiconductor layer. First electrode portion is electrically connected to two-dimensional material layer. Second electrode portion is electrically connected to two-dimensional material layer with semiconductor layer interposed therebetween. Ferroelectric layer is electrically connected to at least any one of first electrode portion, second electrode portion and semiconductor layer. Electromagnetic wave detector is configured such that an electric field generated from ferroelectric layer is shielded with respect to two-dimensional material layer. Alternatively, ferroelectric layer is arranged so as not to be overlapped with two-dimensional material layer in plan view.

Abstract: Provided is a curable composition including a urethanization reaction product of: a branched polyolefin diol having a carbon-carbon double bond in a side chain; at least one selected from an isocyanurate product, an adduct product, and a biuret product, of an aliphatic diisocyanate having 6 or more and 10 or less total carbon atoms; and a hydroxy saturated C1 to C4 alkyl (meth)acrylate. Also provided are a method for producing the curable composition, and a specific curable compound included in the curable composition.

Abstract: Electromagnetic wave detector includes semiconductor layer, first insulating film, two-dimensional material layer, first electrode, second electrode, second insulating film, and control electrode. First insulating film is arranged on semiconductor layer. First insulating film is provided with opening. Two-dimensional material layer is electrically connected to semiconductor layer in opening. Two-dimensional material layer extends from above opening to first insulating film. Second insulating film is in contact with two-dimensional material layer. Control electrode is connected to two-dimensional material layer with second insulating film interposed therebetween.

Abstract: An object of the present invention is to suppress electrical contact between an outer peripheral portion of an intermediate electrode and a front surface electrode of a semiconductor chip without increasing the area of the semiconductor chip. A facing surface of the first intermediate electrode facing a first main electrode is smaller than a facing surface of the first main electrode facing the first intermediate electrode, and has an outer peripheral protective region and a connection region surrounded by the protective region. A pressure-contact semiconductor device includes a plurality of first conductor films partially formed in the connection region, and a first insulating film formed in regions in the connection region where no first conductor films are formed and in the protective region.

Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Abstract: An electromagnetic wave detector includes a semiconductor layer, a two-dimensional material layer electrically connected to the semiconductor layer, a first electrode electrically connected to the two-dimensional material layer without the semiconductor layer interposed therebetween, a second electrode electrically connected to the two-dimensional material layer with the semiconductor layer interposed therebetween, and a ferroelectric layer in contact with at least a part of the two-dimensional material layer.

Abstract: An electromagnetic wave detector includes a semiconductor substrate, a first insulating film disposed on the semiconductor substrate and formed so as to expose a part of the semiconductor substrate, a first electrode disposed on the first insulating film, a two-dimensional material layer having a joint part forming a Schottky junction with the semiconductor substrate in a part of the semiconductor substrate, the two-dimensional material layer extending from the joint part to the first electrode over the first insulating film, a second electrode in contact with the semiconductor substrate, and a control electrode disposed at least partly around the joint part in plan view to form a Schottky junction with the semiconductor substrate.

Abstract: Provided is a curable composition including: a curable oligomer having, in its molecule, a branched polyolefin structure and a (meth)acryloyl group; a saturated cycloalkyl (meth)acrylate monomer having, in its molecule, a saturated cyclic hydrocarbon structure and a (meth)acryloyl group; and a saturated chain alkyl (meth)acrylate monomer having, in its molecule, a saturated chain hydrocarbon structure and a (meth)acryloyl group.

Abstract: An electromagnetic wave detector includes: a semiconductor layer in which a step is formed, the semiconductor layer having sensitivity to a detection wavelength; an insulating film disposed on the step and provided with an opening through which a part of the step is exposed; a two-dimensional material layer disposed on the insulating film and the opening, the two-dimensional material layer including a connection region electrically connected to the semiconductor layer in the opening; a first electrode disposed on the insulating film and electrically connected to the two-dimensional material layer; and a second electrode disposed on the semiconductor layer and electrically connected to the first electrode through the connection region of the two-dimensional material layer.

Abstract: A battery management device includes a calculating unit that calculates a movable distance based on a state of charge of an energy storage device serving as a power source of the electric moving body. The calculation unit of the battery management device is configured to: acquire a state of charge of the energy storage device; acquire environmental information in a planned route of the electric moving body; calculate, from the acquired state of charge and environmental information, a power consumption amount predicted based on a watt-hour necessary for the electric moving body to move along the planned route and a prediction of a power consumption amount in an installation mounted on the electric moving body; and calculate a movable distance achieved by remaining power of the energy storage device based on the calculated predicted power consumption amount and the state of charge.

Abstract: A water-based ink for ink-jet recording includes dyes and water. The dyes include a blue dye having a hue angle of 220° to 280°; a yellow dye having a hue angle of 70° to 120°; and a copper phthalocyanine dye. A mass ratio (C/B) of a content (C) of the copper phthalocyanine dye to a content (B) of the blue dye in an entire amount of the water-based ink is equal to or more than 0.5, and a total content of the dyes in the entire amount of the water-based ink is equal to or more than 6% by mass.

Abstract: An electromagnetic wave detector includes a light-receiving element, an insulating film, a two-dimensional material layer, a first electrode part, and a second electrode part. The light-receiving element includes a first semiconductor portion of a first conductivity type and a second semiconductor portion. The second semiconductor portion is joined to the first semiconductor portion. The second semiconductor portion is of a second conductivity type. The insulating film is disposed on the light-receiving element. The insulating film has an opening portion. The two-dimensional material layer is electrically connected to the first semiconductor portion in the opening portion. The two-dimensional material layer extends from on the opening portion onto the insulating film. The first electrode part is disposed on the insulating film. The first electrode part is electrically connected to the two-dimensional material layer. The second electrode part is electrically connected to the second semiconductor portion.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: This electromagnetic wave detector is provided with light reception graphene and reference graphene that are aligned on an insulating layer, first electrodes and second electrodes that are disposed so as to oppose each other and sandwich the light reception graphene and reference graphene, a gate electrode for applying a gate voltage to the light reception graphene and reference graphene, and a balanced circuit and detection circuit that are connected between the second electrodes. If electromagnetic waves are incident on the light reception graphene, photocarriers will be generated through in-band transition. If electromagnetic waves are incident on the reference graphene, photocarriers will not be generated because of the Pauli blocking effect. In a state where no electromagnetic waves are incident on the light reception graphene or reference graphene, the balanced circuit causes the first electrodes and second electrodes to have the same potential.

Abstract: This electromagnetic wave detector that detects electromagnetic waves by performing photoelectric conversion includes: a substrate; an insulating layer that is provided on the substrate; a graphene layer that is provided on the insulating layer; a pair of electrodes, which are provided on the insulating layer, and which are connected to both ends of the graphene layer, respectively; and a contact layer that is provided such that the contact layer is in contact with the graphene layer. The contact layer is formed of a material having a polar group, and a charge is formed in the graphene layer by having the contact layer in contact with the graphene layer.

Abstract: An object of the present invention is to suppress electrical contact between an outer peripheral portion of an intermediate electrode and a front surface electrode of a semiconductor chip without increasing the area of the semiconductor chip. A facing surface of the first intermediate electrode facing a first main electrode is smaller than a facing surface of the first main electrode facing the first intermediate electrode, and has an outer peripheral protective region and a connection region surrounded by the protective region. A pressure-contact semiconductor device includes a plurality of first conductor films partially formed in the connection region, and a first insulating film formed in regions in the connection region where no first conductor films are formed and in the protective region.

Abstract: Reliability of a gate resistor element during high-temperature operation is enhanced. A semiconductor device includes a drift layer, a base layer, an emitter layer, a gate insulation film, a gate electrode, a gate pad electrode, a first resistance layer, and a first nitride layer. A resistor of the first resistance layer has a negative temperature coefficient. The first resistance layer is made of hydrogen-doped amorphous silicon. The first nitride layer is made of a silicon nitride layer or an aluminum nitride layer.

Abstract: An electromagnetic wave detector comprises: p-type and n-type graphenes arranged side by side on an insulating layer; a first electrode and a second electrode opposing each other via the graphenes; a gate electrode for applying an operation voltage to the p-type and n-type graphenes; a balance circuit connected between two second electrodes; and a detection circuit. The p-type graphene has a Dirac point voltage higher than the operation voltage. The n-type graphene has a Dirac point voltage lower than the operation voltage. In a state in which no electromagnetic wave is incident on the graphenes, the balance circuit places the first electrode and the second electrode at the same potential. In a state in which an electromagnetic wave is incident on the p-type and n-type graphenes, the detection circuit detects an electric signal between the second electrodes, and outputs an electric signal in the state in which the electromagnetic wave is incident.