Abstract: A response signal generating unit (3) applies a predetermined supply signal (2S) to a detection element (1) and outputs, as a response signal (3S), a signal which has changed in accordance with the impedance of an object (10) with which the unit is in contact through the detection element (1). A waveform information detection unit (4) detects waveform information corresponding to the impedance of the object (10) on the basis of the response signal (3S) from the response signal generating unit (3), and outputs a detection signal (4S) representing the waveform information. A biometric recognition unit (5) determines on the basis of the detection signal (4S) from the waveform information detection unit (4) whether or not the object (10) is a living body.

Abstract: For control of crystal grain size in a spin-valve film, a lithographic technique is needed which exhibits high productivity and enabling formation of a pattern at about 10 nm. In one embodiment of the invention, a diblock copolymer comprising polystyrene (PS) and polymethyl methacrylate (PMMA) is applied to a lower gap layer. When a liquid agent formed by mixing PS and PMMA is coated, a film structure comprising a sea-like PS tissue portion and an island-like PMMA tissue portion is obtained. By applying an ozone RIE treatment to the film structure, the sea-like PS tissue portion is etched to form a pattern of the island-like PMMA tissue portion. The lower gap layer is etched by using the island-like PMMA tissue portion as a resist, then the resist is removed, and an unevenness pattern arranged regularly on the lower gap layer can be formed. A spin-valve film is formed on the lower gap layer subjected to the unevenness fabrication.

Abstract: A detection element (1A) having a detection electrode (11A) connected to a surface shape detection unit (2) and a detection electrode (12A) connected to a common potential, and a detection element (1B) having a detection electrode (11B) connected to the surface shape detection unit (2) and a detection electrode (12B) connected to a biometric recognition unit (3) are arranged. The surface shape detection unit (2) outputs a signal representing the three-dimensional pattern of the surface shape corresponding to the contact portion to each detection element on the basis of individual capacitances obtained from the detection elements (1A, 1B). The biometric recognition unit (3) determines whether an object (9) is a living body, on the basis of a signal corresponding to the impedance of the object (9) connected between the detection electrode (12B) of the detection element (1B) and the detection electrode (12A) of the detection element (1A).

Abstract: A row decoding circuit (171) outputs a select signal to a row set in a row range setting unit (172) to select a select signal line (103), processing results from processing circuits (102) on this row are output to a data output line (104), and a row adder (106) adds processing results output to a data output line (104) of a column set in a column range selector (105).

Abstract: Exchange coupling energy between an anti-ferromagnetic layer and a first ferromagnetic layer, and an anti-ferromagnetic coupling energy between the first ferromagnetic layer and a second ferromagnetic layer by way of an Ru anti-ferromagnetic coupling layer of a spin valve device are increased thereby increasing the magnetoresistance ratio and decreasing the coercivity of the free layer of the spin valve film. In an MnPt anti-ferromagnetic bottom type synthetic ferri-type spin valve film in which an underlayer, an anti-ferromagnetic layer comprising MnPt, a first ferromagnetic layer comprising CoFe, an anti-ferromagnetic coupling layer comprising Ru, a second ferromagnetic layer comprising CoFe, an intermediate non-magnetic layer comprising Cu, a free layer comprising synthetic films of CoFe and NiFe and a protective layer are stacked over a substrate, the Fe composition X in CoFeX of the first ferromagnetic layer is set as about: 20<x?50 at %.

Abstract: For spatial arrangement of a drive motor (1) in a motor room (2), a three-point support system (TPS) includes supports (SP1, SP2) having a vibration suppressing member (3) for suppressing vibrations to be transmitted from the drive motor (1), a first bracket (5) for fixing the vibration suppressing member (3) to a transversely inner lateral side (4a) of a side member (4) of a front part (VBf) of a vehicle body, and a second bracket (6) for fixing the drive motor (1) to the vibration suppressing member (3), while the first bracket (5) is fastened to the inner lateral side (4a) of the side member (4), and the second bracket (6) is fastened at a proximal end (6a) to the vibration suppressing member (3) and at a distal end (6b) to the drive motor (1) to be disposed lower than the side member (4), with a reduced vibration transmission from the drive motor (1) to the vehicle body, allowing a facilitated removal of the drive motor (1).

Abstract: A master latch (1) is formed from a static circuit, and a slave latch (2) is formed from a dynamic circuit. The number of circuit elements can be smaller as compared to a slave latch formed from a static circuit so that the size and area of a master-slave flip-flop can be reduced. Since the master latch is formed from a static circuit, data can be held stably during the standby time by setting the master latch in a data holding state.

Abstract: A detection element (1A) having a detection electrode (11A) connected to a surface shape detection unit (2) and a detection electrode (12A) connected to a common potential, and a detection element (1B) having a detection electrode (11B) connected to the surface shape detection unit (2) and a detection electrode (12B) connected to a biometric recognition unit (3) are arranged. The surface shape detection unit (2) outputs a signal representing the three-dimensional pattern of the surface shape corresponding to the contact portion to each detection element on the basis of individual capacitances obtained from the detection elements (1A, 1B). The biometric recognition unit (3) determines whether an object (9) is a living body, on the basis of a signal corresponding to the impedance of the object (9) connected between the detection electrode (12B) of the detection element (1B) and the detection electrode (12A) of the detection element (1A).

Abstract: A parallel processing logic circuit for sensor signal processing includes sensors and processing units. The sensor and the processing unit are integrated in the same pixel and arranged in a matrix. The processing unit contains a logic structure that consists of a register and a combinational logic function to execute pixel-parallel processing, based on binary data for a sensor, other processing units, and itself. The combinational logic function performs only a predetermined logic function and its dual one exclusively, thereby sharing the circuit resource and reducing the size of the processing unit. The register focusing on compactness also contributes to the small unit.

Abstract: A structure (113b) which includes an overhang and a support portion supporting substantially the center of the overhang, and in which the area of the support portion is smaller than the area of the overhang in the two-dimensional direction of an upper electrode (1110b) is formed on the upper electrode (110a) in a region above each lower electrode 105a in one-to-one correspondence with the lower electrode (105a). An object of surface shape sensing, e.g., the tip of a finger (1602) touches the surface of the overhang of the structure (113b), and the support portion of the structure (113b) whose overhang is in contact with the object of sensing pushes down a portion of the upper electrode (110a) toward the lower electrode (105a), thereby deforming the upper electrode (110a).

Abstract: A detection element (1A) having a detection electrode (11A) connected to a surface shape detection unit (2) and a detection electrode (12A) connected to a common potential, and a detection element (1B) having a detection electrode (11B) connected to the surface shape detection unit (2) and a detection electrode (12B) connected to a biometric recognition unit (3) are arranged. The surface shape detection unit (2) outputs a signal representing the three-dimensional pattern of the surface shape corresponding to the contact portion to each detection element on the basis of individual capacitances obtained from the detection elements (1A, 1B). The biometric recognition unit (3) determines whether an object (9) is a living body, on the basis of a signal corresponding to the impedance of the object (9) connected between the detection electrode (12B) of the detection element (1B) and the detection electrode (12A) of the detection element (1A).

Abstract: A method of manufacturing a surface shape recognition sensor. A sacrificial film is formed on an interlevel dielectric to cover a lower electrode while keeping an upper portion of a support electrode exposed. An upper electrode is formed on the sacrificial film and support electrode. The sacrificial film is selectively removed and a protective film is formed on the upper electrode. A photosensitive resin film having photosensitivity is formed on the protective film. A plurality of projections are formed in a region of the protective film above a capacitive detection element. In this manner a plurality of capacitive detection elements each having the lower electrode and upper electrode are formed.

Abstract: Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.

Abstract: Embodiments of the present invention prevent a pinned layer from suffering magnetization reversal by external stress in a magnetic head of magnetoresistance effect type which has a synthetic ferri-magnetic pinned layer structure with an antiferromagnetic layer of IrMnCr. According to one embodiment, a read element of a magnetoresistive head is made up of a antiferromagnetic layer, a first pinned layer, an antiferromagnetically coupled layer 4, a second pinned layer, and a free layer, which are stacked one over another. The first and second pinned layers and have a composition of Co75Fe25 and Co95Fe5, respectively, and a thickness of 18 ? (3.5 nm·T) and 21 ? (3.9 nm·T), respectively, so as to reduce the difference in anisotropic energy between the first pinned layer in contact with the antiferromagnetic layer and the second pinned layer in contact with the nonmagnetic conductive layer.

Abstract: A sensor cell includes a sensor electrode (101) formed on a substrate (100), a signal output unit (16) which outputs a signal corresponding to a capacitance (Cf) formed between the sensor electrode and the surface of a finger (3), a high-sensitivity electrode (103) formed on the substrate so as to be insulated and isolated from the sensor electrode, and a potential controller (14) which controls the potential of the finger surface via a capacitance (Cc) formed between the high-sensitivity electrode and the finger surface by controlling the potential of the high-sensitivity electrode. In this arrangement, when the resistance of the finger is high, the potential of the finger surface can be controlled so as not to fluctuate with the potential change of the sensor electrode.

Abstract: A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.

Abstract: A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.

Abstract: A master latch (1) is formed from a static circuit, and a slave latch (2) is formed from a dynamic circuit. The number of circuit elements can be smaller as compared to a slave latch formed from a static circuit so that the size and area of a master-slave flip-flop can be reduced. Since the master latch is formed from a static circuit, data can be held stably during the standby time by setting the master latch in a data holding state.

Abstract: A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. The length of the free magnetic layer in the direction of the track width is 200 nm or less, and a difference between a product of saturation magnetic flux density and a film thickness of the first free magnetic film, and that of the second free magnetic film is within a range from 1 to 3 nmT. By this structure, the variation of output and the variation of asymmetry is greatly decreased at a track width of 200 nm or less.

Abstract: A data conversion/output device includes a number of sensors, voltage-time conversion circuits that are arranged adjacent to respective sensors and change output levels upon the lapse of times corresponding to output voltage values from the sensors after a conversion operation start point in order to convert voltage outputs of the sensors into times. The device also includes sensed data generation circuits for outputting, as digital data, lapse times until the output levels of the voltage-time conversion circuits change after a conversion start point. The sensed data generation circuits include a counter for counting a clock signal. An operation start of the voltage-time conversion circuits and a start of count operation of the counter are staggered.