Abstract: There is provided a drug which exhibits preventive and therapeutic effects on virus infectious diseases by inhibiting virus-derived protease on the basis of various physiological activity actions of an active sulfur compound(s) which exists in living organisms.

Abstract: A charging prediction system includes vehicles, a charging station, and a control device including one or more processors and one or more memories. The one or more processors are configured to execute a process. The process includes accumulating, in a storage device, record data that is actual data on a charged vehicle ratio for a first remaining traveling distance of each of the vehicles traveling along a specific traveling road. The process includes deriving, based on the record data, a predicted value of the charged vehicle ratio for each vehicle in a predetermined group including ones of the vehicles currently traveling along the specific traveling road. The process includes deriving a predicted waiting period that is a predicted value of a waiting period to a start of charging at the charging station based on the predicted values of the charged vehicle ratios.

Abstract: The present invention is a biomarker for diagnosing infectious disease wherein the biomarker is a sulfur metabolite, and the sulfur metabolite may be a sulfur metabolite present in exhaled air, and the sulfur metabolite can be detected from exhaled air condensate. The biomarker for infectious disease includes a biomarker for diagnosing bacterial and viral infection, especially new coronavirus infection; a biomarker for diagnosing pneumonias such as infectious pneumonia, especially interstitial pneumonia due to new coronavirus infection, and additionally alveolar pneumonia; and a biomarker for diagnosing exacerbation due to infection, especially for diagnosing the risk of the transition to exacerbation due to new coronavirus infection. The present invention is further a diagnostic system for detecting a biomarker for diagnosing infection comprising a sulfur metabolite from exhaled air, and is a system for determining infection, especially for diagnosing new coronavirus infection.

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Abstract: A memory amount is reduced. A neural network processing apparatus includes: a decoding unit (41) that decodes a coefficient matrix encoded into a zero coefficient position table and a non-zero coefficient table, the zero coefficient position table indicating positions of first coefficients each having a zero value in the coefficient matrix by a first value and indicating positions of second coefficients each having a non-zero value in the coefficient matrix by a second value, the non-zero coefficient table holding the second coefficients in the coefficient matrix; and a product-sum circuit (116) that performs convolution processing on the coefficient matrix decoded by the decoding unit and a variable matrix. The decoding unit decodes the coefficient matrix by storing the second coefficients stored in the non-zero coefficient table at the positions on the zero coefficient position table indicated by the second value.

Abstract: The present invention provides an anti-PD-L1 antibody capable of staining tumor cells such as melanoma cells. An anti-PD-L1 antibody comprising (a) a light chain comprising CDR1 having the amino acid sequence of KSISKY (SEQ ID NO: 1), CDR2 having the amino acid sequence of SGS and CDR3 having the amino acid sequence of QQHNEYPLT (SEQ ID NO: 2) and (b) a heavy chain comprising CDR1 having the amino acid sequence of GYTFTDYI (SEQ ID NO: 3), CDR2 having the amino acid sequence of INPDSGGN (SEQ ID NO: 4) and CDR3 having the amino acid sequence of ARGITMMVVISHWKFDP (SEQ ID NO: 5). A composition for detecting PD-L1, comprising the above antibody as an active ingredient. A method for preparing the above antibody is also provided.

Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

Abstract: An apparatus includes: a product-sum operation circuit that executes a product-sum operation with a plurality of input values quantized by power expression and plurality of weigh coefficients quantized by power expression corresponding to respective input values, in which an exponent of each of the input values is expressed by a fraction having a predetermined divisor in a denominator, an exponent of each of the weigh coefficients is expressed by a fraction having the divisor in a denominator, the product-sum operation circuit executes the product-sum operation using a plurality of addition multipliers based on a remainder when a value obtained by adding a numerator related to the exponent of each of the input values and a numerator related to the exponent of each of the weigh coefficients is divided as a dividend, and each of the addition multipliers is a floating-point number with an exponent part having a radix of 2.

Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.

Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.

Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.

Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

Abstract: An information processing device including a sound output control unit that performs control related to sound output, in a case where an image captured at a first frame rate is subjected to display reproduction at a second frame rate lower than the first frame rate, on the basis of at least one of an input image signal, an input sound signal, reproduction speed information indicating a ratio between the first frame rate and the second frame rate, or user input information, in which the control related to the sound output performed by the sound output control unit includes switching control that selects one sound output method from a plurality of sound output methods and performs switching, or mixing control that performs mixing of sound signals obtained by the plurality of sound output methods.

Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

Abstract: The present invention provides an anti-PD-L1 antibody capable of staining tumor cells such as melanoma cells. An anti-PD-L1 antibody comprising (a) a light chain comprising CDR1 having the amino acid sequence of KSISKY (SEQ ID NO: 1), CDR2 having the amino acid sequence of SGS and CDR3 having the amino acid sequence of QQHNEYPLT (SEQ ID NO: 2) and (b) a heavy chain comprising CDR1 having the amino acid sequence of GYTFTDYI (SEQ ID NO: 3), CDR2 having the amino acid sequence of INPDSGGN (SEQ ID NO: 4) and CDR3 having the amino acid sequence of ARGITMMVVISHWKFDF (SEQ ID NO: 5). A composition for detecting PD-L1, comprising the above antibody as an active ingredient. A method for preparing the above antibody is also provided.

Abstract: A novel domain of Aggrus involved in the binding to CLEC-2 was searched for, and monoclonal antibodies recognizing the domain were obtained. The newly found PLAG4 domain is important for Aggrus binding to CLEC-2. Monoclonal antibodies recognizing this region were further developed. The present invention can provide novel Aggrus-CLEC-2 binding inhibitors, platelet aggregation inhibitors, cancer metastasis inhibitors, and tumor growth inhibitors using these antibodies.