Patents by Inventor Satoshi Takagi

Satoshi Takagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12131947
    Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: October 29, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Yutaka Motoyama, Satoshi Takagi, Akari Matsunaga, Keisuke Fujita
  • Patent number: 12086952
    Abstract: An image processing device includes an image processing unit configured to execute image processing on an image based on an input image, and output a result of the image processing. The input image is a post-conversion image obtained by performing image conversion on an original image. The image conversion includes image conversion for further reducing a data size of the original image while maintaining a feature acquired from the original image and related to an object similar to a subject captured in the original image and maintaining processing accuracy of the image processing.
    Type: Grant
    Filed: June 6, 2019
    Date of Patent: September 10, 2024
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Satoshi Suzuki, Motohiro Takagi, Kazuya Hayase, Takayuki Onishi, Atsushi Shimizu
  • Publication number: 20240285587
    Abstract: It has been revealed that lysophosphatidic acid (LPA) functions as a mediator that augments invasive ability in osteosarcoma. Furthermore, it has been found that LPAR1, which is a receptor for LPA, is highly expressed in osteosarcoma and glioma, and the LPA-LPAR1 interaction is involved in the metastasis and proliferation of osteosarcoma and glioma. Examinations carried out on the basis of these findings have found that LPAR1 antagonists can serve as therapeutic agents for suppressing the metastasis and proliferation of osteosarcoma and glioma.
    Type: Application
    Filed: June 24, 2022
    Publication date: August 29, 2024
    Inventors: Satoshi Takagi, Ryohei Katayama
  • Publication number: 20240139277
    Abstract: There is provided a drug which exhibits preventive and therapeutic effects on virus infectious diseases by inhibiting virus-derived protease on the basis of various physiological activity actions of an active sulfur compound(s) which exists in living organisms.
    Type: Application
    Filed: May 19, 2021
    Publication date: May 2, 2024
    Inventors: Takaaki AKAIKE, Satoshi TAKAGI, Hisatoshi SUGIURA, Kenji INABA
  • Publication number: 20240085401
    Abstract: The present invention is a biomarker for diagnosing infectious disease wherein the biomarker is a sulfur metabolite, and the sulfur metabolite may be a sulfur metabolite present in exhaled air, and the sulfur metabolite can be detected from exhaled air condensate. The biomarker for infectious disease includes a biomarker for diagnosing bacterial and viral infection, especially new coronavirus infection; a biomarker for diagnosing pneumonias such as infectious pneumonia, especially interstitial pneumonia due to new coronavirus infection, and additionally alveolar pneumonia; and a biomarker for diagnosing exacerbation due to infection, especially for diagnosing the risk of the transition to exacerbation due to new coronavirus infection. The present invention is further a diagnostic system for detecting a biomarker for diagnosing infection comprising a sulfur metabolite from exhaled air, and is a system for determining infection, especially for diagnosing new coronavirus infection.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Takaaki AKAIKE, Satoshi TAKAGI
  • Patent number: 11851752
    Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: December 26, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Akari Matsunaga, Yutaka Motoyama, Satoshi Takagi
  • Publication number: 20230267310
    Abstract: A memory amount is reduced. A neural network processing apparatus includes: a decoding unit (41) that decodes a coefficient matrix encoded into a zero coefficient position table and a non-zero coefficient table, the zero coefficient position table indicating positions of first coefficients each having a zero value in the coefficient matrix by a first value and indicating positions of second coefficients each having a non-zero value in the coefficient matrix by a second value, the non-zero coefficient table holding the second coefficients in the coefficient matrix; and a product-sum circuit (116) that performs convolution processing on the coefficient matrix decoded by the decoding unit and a variable matrix. The decoding unit decodes the coefficient matrix by storing the second coefficients stored in the non-zero coefficient table at the positions on the zero coefficient position table indicated by the second value.
    Type: Application
    Filed: July 9, 2021
    Publication date: August 24, 2023
    Inventor: Satoshi Takagi
  • Patent number: 11697686
    Abstract: The present invention provides an anti-PD-L1 antibody capable of staining tumor cells such as melanoma cells. An anti-PD-L1 antibody comprising (a) a light chain comprising CDR1 having the amino acid sequence of KSISKY (SEQ ID NO: 1), CDR2 having the amino acid sequence of SGS and CDR3 having the amino acid sequence of QQHNEYPLT (SEQ ID NO: 2) and (b) a heavy chain comprising CDR1 having the amino acid sequence of GYTFTDYI (SEQ ID NO: 3), CDR2 having the amino acid sequence of INPDSGGN (SEQ ID NO: 4) and CDR3 having the amino acid sequence of ARGITMMVVISHWKFDP (SEQ ID NO: 5). A composition for detecting PD-L1, comprising the above antibody as an active ingredient. A method for preparing the above antibody is also provided.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: July 11, 2023
    Assignees: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, FUSO PHARMACEUTICAL INDUSTRIES, LTD.
    Inventors: Satoru Konnai, Kazuhiko Ohashi, Shiro Murata, Tomohiro Okagawa, Asami Nishimori, Naoya Maekawa, Satoshi Takagi, Yumiko Kagawa, Yasuhiko Suzuki, Chie Nakajima
  • Patent number: 11557476
    Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: January 17, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Takagi, Kazuya Kitamura, Hsiulin Tsai
  • Publication number: 20220334802
    Abstract: An apparatus includes: a product-sum operation circuit that executes a product-sum operation with a plurality of input values quantized by power expression and plurality of weigh coefficients quantized by power expression corresponding to respective input values, in which an exponent of each of the input values is expressed by a fraction having a predetermined divisor in a denominator, an exponent of each of the weigh coefficients is expressed by a fraction having the divisor in a denominator, the product-sum operation circuit executes the product-sum operation using a plurality of addition multipliers based on a remainder when a value obtained by adding a numerator related to the exponent of each of the input values and a numerator related to the exponent of each of the weigh coefficients is divided as a dividend, and each of the addition multipliers is a floating-point number with an exponent part having a radix of 2.
    Type: Application
    Filed: July 14, 2020
    Publication date: October 20, 2022
    Applicant: Sony Group Corporation
    Inventors: Satoshi TAKAGI, Koji KIYOTA, Hirotaka HORIE
  • Publication number: 20220307128
    Abstract: A method for forming a silicon film includes supplying a first processing gas including a silicon-containing gas to a substrate to deposit a first silicon film under a first processing condition; and supplying a second processing gas including the silicon-containing gas to the substrate to deposit a second silicon film under a second processing condition. A second in-plane distribution of film characteristic when the second silicon film is deposited under the second processing condition is different from a first in-plane distribution of the film characteristic when the first silicon film is deposited under the first processing condition.
    Type: Application
    Filed: March 9, 2022
    Publication date: September 29, 2022
    Inventors: Akari MATSUNAGA, Yutaka MOTOYAMA, Satoshi TAKAGI
  • Patent number: 11424143
    Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: August 23, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koji Yoshii, Tatsuya Yamaguchi, Hiroyuki Hayashi, Mitsuhiro Okada, Satoshi Takagi, Toshihiko Takahashi, Masafumi Shoji, Kazuya Kitamura
  • Publication number: 20220238374
    Abstract: A method for manufacturing a semiconductor device is provided. In the method, a silicon-containing gas is supplied to a substrate having a recess in a surface thereof at a predetermined film deposition temperature, thereby depositing a first silicon film in the recess. Chlorine and hydrogen are supplied to the substrate while maintaining the predetermined film deposition temperature, thereby etching the first silicon film deposited in the recess to expand an opening width of the first silicon film. The silicon-containing gas is supplied to the substrate while maintaining the predetermined film deposition temperature, thereby further depositing a second silicon film on the first silicon film in the recess.
    Type: Application
    Filed: January 24, 2022
    Publication date: July 28, 2022
    Inventors: Yutaka Motoyama, Satoshi Takagi, Akari Matsunaga, Keisuke Fujita
  • Patent number: 11373876
    Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: June 28, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Satoshi Takagi
  • Publication number: 20220189785
    Abstract: A method for manufacturing a semiconductor device is provided. In the method, an amorphous silicon film is deposited in a recess provided in a surface of a substrate by supplying a silicon-containing gas to the substrate. The amorphous silicon film is etched by supplying an etching gas to the substrate so as to leave the amorphous silicon film on a bottom of the recess. A silicon film is deposited on the amorphous silicon film by supplying dichlorosilane to the substrate.
    Type: Application
    Filed: November 26, 2021
    Publication date: June 16, 2022
    Inventors: Yutaka MOTOYAMA, Hiroaki IKEGAWA, Satoshi TAKAGI, Daisuke SUZUKI
  • Patent number: 11251034
    Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: February 15, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Hayashi, Rui Kanemura, Satoshi Takagi, Mitsuhiro Okada
  • Patent number: 11211265
    Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: December 28, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Takagi, Hiroyuki Hayashi, Hsiulin Tsai
  • Patent number: 11177133
    Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: November 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Takagi, Yoshimasa Watanabe
  • Patent number: 11134300
    Abstract: An information processing device including a sound output control unit that performs control related to sound output, in a case where an image captured at a first frame rate is subjected to display reproduction at a second frame rate lower than the first frame rate, on the basis of at least one of an input image signal, an input sound signal, reproduction speed information indicating a ratio between the first frame rate and the second frame rate, or user input information, in which the control related to the sound output performed by the sound output control unit includes switching control that selects one sound output method from a plurality of sound output methods and performs switching, or mixing control that performs mixing of sound signals obtained by the plurality of sound output methods.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: September 28, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Satoshi Takagi
  • Publication number: 20210098254
    Abstract: There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.
    Type: Application
    Filed: September 25, 2020
    Publication date: April 1, 2021
    Inventors: Satoshi TAKAGI, Kazuya KITAMURA, Hsiulin TSAI