Abstract: To provide an information processing device and a program. Provided is an information processing device including a sound output control unit that performs control related to sound output, in a case where an image captured at a first frame rate is subjected to display reproduction at a second frame rate lower than the first frame rate, on the basis of at least one of an input image signal, an input sound signal, reproduction speed information indicating a ratio between the first frame rate and the second frame rate, or user input information, in which the control related to the sound output performed by the sound output control unit includes switching control that selects one sound output method from a plurality of sound output methods and performs switching, or mixing control that performs mixing of sound signals obtained by the plurality of sound output methods.

Abstract: The present invention provides an anti-PD-L1 antibody capable of staining tumor cells such as melanoma cells. An anti-PD-L1 antibody comprising (a) a light chain comprising CDR1 having the amino acid sequence of KSISKY (SEQ ID NO: 1), CDR2 having the amino acid sequence of SGS and CDR3 having the amino acid sequence of QQHNEYPLT (SEQ ID NO: 2) and (b) a heavy chain comprising CDR1 having the amino acid sequence of GYTFTDYI (SEQ ID NO: 3), CDR2 having the amino acid sequence of INPDSGGN (SEQ ID NO: 4) and CDR3 having the amino acid sequence of ARGITMMVVISHWKFDF (SEQ ID NO: 5). A composition for detecting PD-L1, comprising the above antibody as an active ingredient. A method for preparing the above antibody is also provided.

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

Abstract: A novel domain of Aggrus involved in the binding to CLEC-2 was searched for, and monoclonal antibodies recognizing the domain were obtained. The newly found PLAG4 domain is important for Aggrus binding to CLEC-2. Monoclonal antibodies recognizing this region were further developed. The present invention can provide novel Aggrus-CLEC-2 binding inhibitors, platelet aggregation inhibitors, cancer metastasis inhibitors, and tumor growth inhibitors using these antibodies.

Abstract: A method of filling a recess according to one embodiment of the present disclosure comprises heating an amorphous semiconductor film without crystallizing the amorphous semiconductor film by radiating laser light to the amorphous semiconductor film embedded in the recess.

Abstract: A hydrogen production apparatus including a desulfurizer, a reformer, a CO transformer a gas flow path, and a purge gas supply path which is provided where a purge gas is supplied to an upstream side of a pressure feeding apparatus in the gas flow path, prior to a stopping operation, a purging step of replacing gas within the gas flow path with the purge gas and filling the purge gas into the gas flow path is performed, and in a start-up operation in which a heating means is operated to increase the temperature of the gas within the gas flow path, which is performed prior to a hydrogen purification operation, a pressure increasing step of supplying the purge gas from the purge gas supply path to the closed circulation circuit and increasing the pressure within the closed circulation circuit is performed.

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.

Abstract: The present invention provides an anti-PD-L1 antibody capable of staining tumor cells such as melanoma cells. An anti-PD-L1 antibody comprising (a) a light chain comprising CDR1 having the amino acid sequence of KSISKY (SEQ ID NO: 1), CDR2 having the amino acid sequence of SGS and CDR3 having the amino acid sequence of QQHNEYPLT (SEQ ID NO: 2) and (b) a heavy chain comprising CDR1 having the amino acid sequence of GYTFTDYI (SEQ ID NO: 3), CDR2 having the amino acid sequence of INPDSGGN (SEQ ID NO: 4) and CDR3 having the amino acid sequence of ARGITMMVVISHWKFDF (SEQ ID NO: 5). A composition for detecting PD-L1, comprising the above antibody as an active ingredient. A method for preparing the above antibody is also provided.

Abstract: A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.

Abstract: A hydrogen production apparatus including a desulfurizer, a reformer, a CO transformer a gas flow path, and a purge gas supply path which is provided where a purge gas is supplied to an upstream side of a pressure feeding apparatus in the gas flow path, prior to a stopping operation, a purging step of replacing gas within the gas flow path with the purge gas and filling the purge gas into the gas flow path is performed, and in a start-up operation in which a heating means is operated to increase the temperature of the gas within the gas flow path, which is performed prior to a hydrogen purification operation, a pressure increasing step of supplying the purge gas from the purge gas supply path to the closed circulation circuit and increasing the pressure within the closed circulation circuit is performed.

Abstract: A heat treatment apparatus includes a processing container that accommodates a plurality of substrates, a gas supply unit that supplies a raw material gas into the processing container, an exhaust unit that exhausts the raw material gas in the processing container, and a heating unit that heats the plurality of substrates. The gas supply unit includes a gas supply pipe including: a first straight pipe portion that extends upward along a longitudinal direction of an inner wall surface of the processing container; a bent portion where a distal end side that extends above the first straight pipe portion is bent downward; a second straight pipe portion that extends downward from the bent portion; and a plurality of gas ejecting holes formed on the second straight pipe portion. The first straight pipe portion has a larger cross-sectional area than the second straight pipe portion.

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Abstract: There is provided a method of forming a silicon film, a germanium, or a silicon germanium film on a surface to be processed of a workpiece, which has single crystalline silicon, single crystalline germanium, or single crystalline silicon germanium as the surface to be processed, includes: a first process of preparing the workpiece; a second process of adsorbing a halogen element on the surface to be processed of the workpiece; and a third process of forming an amorphous silicon film, an amorphous germanium film, or an amorphous silicon germanium film on the surface to be processed of the workpiece by supplying a source gas for forming a silicon film, a germanium film, or a silicon germanium film to the workpiece.

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

Abstract: A hydrogen production apparatus including a desulfurizer, a reformer, a CO transformer a gas flow path, and a purge gas supply path which is provided where a purge gas is supplied to an upstream side of a pressure feeding apparatus in the gas flow path, prior to a stopping operation, a purging step of replacing gas within the gas flow path with the purge gas and filling the purge gas into the gas flow path is performed, and in a start-up operation in which a heating means is operated to increase the temperature of the gas within the gas flow path, which is performed prior to a hydrogen purification operation, a pressure increasing step of supplying the purge gas from the purge gas supply path to the closed circulation circuit and increasing the pressure within the closed circulation circuit is performed.

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

Abstract: A method of forming a silicon film in a recess formed in a target substrate includes: preparing a target substrate having a recess in which a plurality of different bases is exposed; forming an atomic layer seed on at least an inner surface of the recess by sequentially supplying a raw material gas adapted to the plurality of different bases and a reaction gas reacting with the raw material gas to the target substrate one or more times while heating the target substrate to a first temperature; and forming a silicon film on a surface of the atomic layer seed so as to fill the recess by supplying a first silicon raw material gas to the target substrate while heating the target substrate to a second temperature.

Abstract: A novel domain of Aggrus involved in the binding to CLEC-2 was searched for, and monoclonal antibodies recognizing the domain were obtained. The newly found PLAG4 domain is important for Aggrus binding to CLEC-2. Monoclonal antibodies recognizing this region were further developed. The present invention can provide novel Aggrus-CLEC-2 binding inhibitors, platelet aggregation inhibitors, cancer metastasis inhibitors, and tumor growth inhibitors using these antibodies.

Abstract: There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.