Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.

Abstract: Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.

Abstract: A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Abstract: A program preparation and distribution system, in which metadata indicating variable information is generated from project to project, from medium to medium, from scene to scene or from frame to frame, to realize an asset management by controlling an archive system depending on the metadata. A database is constructed in which the archive system manages metadata in a concentrated fashion along with the essence such as video and audio data. By a distributed program editing system, the metadata inputted at the planning processing and at the casting processing is registered in the database managed in a concentrated fashion by an archival manager, at the same time as a tag specifying the registered metadata is issued. This tag is co-packed with the video and audio information obtained on acquisition by an acquisition system. In a production system, the timing to flow the staff roll is specified during the off-line processing in the production system.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.

Abstract: A purpose of the present invention is to provide a conductive paste which is capable to prevent the structural defect and to provide a method for producing electronic components including an internal electrode layer formed by the conductive paste. A conductive paste comprises metallic particles, solvent, rein, a first inhibitor, a second inhibitor and a third inhibitor, wherein sintering start temperatures of the first inhibitor, the second inhibitor and the third inhibitor are higher than a sintering start temperature of the metallic particles, when an average particle size of the first inhibitor is defined as “a”, an average particle size of the second inhibitor is defined as “b”, an average particle size of the third inhibitor is defined as “c”, “a”, “b” and “c” fulfill a predetermined relation.

Abstract: A dielectric ceramic composition comprises a main component composed of at least one selected from BaTiO3, (Ba, Ca)TiO3, (Ba, Sr)TiO3 and (Ba, Ca, Sr)TiO3, an oxide of rare earth element and a composite compound including Ba. 9 to 13 mol of the composite compound in terms of composite compound is included in the dielectric composition. The dielectric ceramic composition includes surface diffusion particles having surface diffusion structure composed of non diffusion phase and diffusion phase including rare earth element. In the surface diffusion particle, when an area of the non diffusion phase is defined as S1, an area of the diffusion phase is defined as S2, S1 and S2 satisfy a relation of S1:S2=20:80 to 30:70 (Note that, except S1=30 and S2=70) , when an average concentration of the rare earth element in the surface diffusion particle is defined as C, S2 and C satisfy a relation of 4.8?S2×C?5.8.

Abstract: Disclosed herein is a memory controlling device including: an address converting section configured to convert a logical address included in a request issued from a plurality of clients into a physical address of a memory; a request dividing section configured to divide a converted request converted by the address converting section by a command unit for the memory on a basis of the physical address of the converted request; and an arbitrating section configured to perform arbitration on a basis of the physical address indicated in a divided request output from the request dividing section.

Abstract: When macro blocks each of which has a variable length are input for one picture, null syncs each of which has a unit length are generated corresponding to the format of the video data to be handled. Corresponding to the length information, an overflow portion of a macro block is detected. The overflow portion is successively packed to macro blocks each of which is smaller than the unit length. Thus, each macro block is packed in the unit length. Since the length information of each null sync represents 0, the overflow portions are packed after the length information of each null sync. With null syncs, one format of video data can be matched with another format. In addition, with null syncs, overflow portions are packed. Thus, the record medium can be effectively used.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: An encoding device and method, a decoding device and method, and an image information processing system and method, which can speed up encoding processing and/or decoding processing, are proposed. There is provided a first storing unit which, when an encoding unit or a decoding unit applies encoding processing or decoding processing to image information, stores state quantity information representing a predetermined state quantity which is used while being sequentially updated according to a processing state of the encoding processing or the decoding processing. The encoding unit or the decoding unit reads out only a necessary part of the state quantity information from the first storing unit and changes the state quantity information according to the processing state of the encoding processing or the decoding processing with respect to the image information, and then writes back the state quantity information to the first storing unit.

Abstract: An encoding apparatus and an encoding method, a decoding apparatus, a decoding method and a decoding program capable of speeding up the encoding or decoding process is provided. The present invention provides with a plurality of pixels corresponding to a processing unit of image information as one word, storing state quantity information to be used while being sequentially updated according to a processing status of an encoding process for the image information in a storage device, and with a predetermined plurality of pixels as the processing unit, performing the encoding process to the image information for each of the processing units by reading the state quantity information corresponding thereto from the storage device in the units of the word and using the read information.

Abstract: A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

Abstract: When macro blocks each of which has a variable length are input for one picture, null syncs each of which has a unit length are generated corresponding to the format of the video data to be handled. Corresponding to the length information, an overflow portion of a macro block is detected. The overflow portion is successively packed to macro blocks each of which is smaller than the unit length. Thus, each macro block is packed in the unit length. Since the length information of each null sync represents 0, the overflow portions are packed after the length information of each null sync. With null syncs, one format of video data can be matched with another format. In addition, with null syncs, overflow portions are packed. Thus, the record medium can be effectively used.

Abstract: A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

Abstract: When macro blocks (MB0 to MB9) each of which has a variable length are input for one picture, null syncs (NULL1 to NULL5) each of which has a unit length are generated corresponding to the format of video data to be handled. Each null sync contains length information and a data portion. The length information represents 0. The data portion is filled with data [00]s. Corresponding to the length information, an overflow portion of a macro block is detected. The overflow portion is successively packed to macro blocks each of which is smaller than the unit length. Thus, each macro block is packed in the unit length. Since the length information of each null sync represents 0, the overflow portions are packed after the length information of each null sync. With null syncs, one format of video data can be matched with another format. In addition, with null syncs, overflow portions are packed. Thus, the record medium can be effectively used.

Abstract: When macro blocks (MB0 to MB9) each of which has a variable length are input for one picture, null syncs (NULL1 to NULL5) each of which has a unit length are generated corresponding to the format of video data to be handled. Each null sync contains length information and a data portion. The length information represents 0. The data portion is filled with data [00]. Corresponding to the length information, an overflow portion of a macro block is detected. The overflow portion is successively packed to macro blocks each of which is smaller than the unit length. Thus, each macro block is packed in the unit length. Since the length information of each null sync represents 0, the overflow portions are packed after the length information of each null sync. With null syncs, one format of video data can be matched with another format. In addition, with null syncs, overflow portions are packed. Thus, the record medium can be effectively used.

Abstract: The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.