Patents by Inventor Satoshi Tokuda

Satoshi Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110043875
    Abstract: According to one embodiment, an image processing apparatus which reads an original document and generates a monochrome image, includes a scanner configured to output a color signal from a color sensor which reads the original document and a monochrome signal from a monochrome sensor which reads the original document, a signal conversion unit configured to convert the color signal into a monochrome signal based on a conversion characteristic in which an increase rate of a density of the monochrome signal after conversion is lower than an increase rate of a density of the color signal before conversion, a signal processing unit configured to process the monochrome signal converted by the signal conversion unit or the monochrome signal output from the scanner to generate an image, and an image generation unit configured to generate the monochrome image from the processed monochrome signal.
    Type: Application
    Filed: August 23, 2010
    Publication date: February 24, 2011
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA TEC KABUSHIKI KAISHA
    Inventor: Satoshi Tokuda
  • Publication number: 20100327172
    Abstract: A radiation detector of this invention includes a Cl-doped CdTe or Cl-doped CdZnTe polycrystalline semiconductor film in which defect levels in crystal grains are protected. This is obtained by grinding CdTe or CdZnTe crystal doped with Cl, and preparing the polycrystalline semiconductor film again by using its powder as the source. The defect levels of crystal grain boundaries in the polycrystalline semiconductor film are also protected by further doping the polycrystalline semiconductor film prepared again with Cl. These features enable manufacture of the radiation detector which has excellent sensitivity and response to radiation.
    Type: Application
    Filed: February 12, 2008
    Publication date: December 30, 2010
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara, Masatomo Kaino, Tamotsu Okamoto
  • Patent number: 7736941
    Abstract: In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: June 15, 2010
    Assignees: Shimadzu Corporation, Institute of National Colleges of Technology, Japan
    Inventors: Satoshi Tokuda, Tamotsu Okamoto
  • Publication number: 20100029037
    Abstract: In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.
    Type: Application
    Filed: April 12, 2007
    Publication date: February 4, 2010
    Inventors: Satoshi Tokuda, Tamotsu Okamoto
  • Publication number: 20090090807
    Abstract: There is provided a system for readily and efficiently fabricating a wound coil composed of a bobbinless coil. The system includes a coil winding device having an upper jig to which an upper plate is attached and a lower jig to which a lower plate is attached which are provided so as to be relatively displaceable and a tension device for applying predetermined tension to a wire rod fed from a wire rod supplying source. The coil winding device is provided with a claw section having first through third split claws that function as a winding section around which the wire rod is wound between the upper and lower plates and that slide in a radial direction when the upper jig is assembled coaxially with the lower jig.
    Type: Application
    Filed: August 29, 2008
    Publication date: April 9, 2009
    Inventors: Tomohiro Nomura, Hirozumi Kon, Satoshi Tokuda, Osamu Hinata
  • Patent number: 7498189
    Abstract: In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.
    Type: Grant
    Filed: March 4, 2005
    Date of Patent: March 3, 2009
    Assignee: Shimadzu Corporation
    Inventors: Toshiyuki Sato, Satoshi Tokuda
  • Publication number: 20080217713
    Abstract: The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
    Type: Application
    Filed: July 10, 2007
    Publication date: September 11, 2008
    Applicant: SHIMADZU CORPORATION
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara
  • Patent number: 7420178
    Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
    Type: Grant
    Filed: May 7, 2004
    Date of Patent: September 2, 2008
    Assignee: Shimadzu Corporation
    Inventor: Satoshi Tokuda
  • Patent number: 7301155
    Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.
    Type: Grant
    Filed: October 24, 2003
    Date of Patent: November 27, 2007
    Assignee: Shimadzu Corporation
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara
  • Patent number: 6949749
    Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.
    Type: Grant
    Filed: June 6, 2001
    Date of Patent: September 27, 2005
    Assignees: Shimadzu Corporation, Sharp Kabushiki Kaisha
    Inventors: Satoshi Tokuda, Toshinori Yoshimuta, Yoshihiro Izumi, Osamu Teranuma
  • Publication number: 20050158906
    Abstract: In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.
    Type: Application
    Filed: March 4, 2005
    Publication date: July 21, 2005
    Applicant: SHIMADZU CORPORATION
    Inventors: Toshiyuki Sato, Satoshi Tokuda
  • Patent number: 6885005
    Abstract: A high withstand voltage insulating substance is formed between a radiation sensitive type amorphous semiconductor thick film suitable for forming a large area and an end edge portion of a voltage application electrode. As a result, concentration of an electric field on the end edge portion of the voltage application electrode is eliminated and a prestage phenomenon of penetration discharge or discharge breakdown is not caused.
    Type: Grant
    Filed: October 17, 2002
    Date of Patent: April 26, 2005
    Assignee: Shimadzu Corporation
    Inventors: Kenji Sato, Satoshi Tokuda
  • Publication number: 20040262497
    Abstract: The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
    Type: Application
    Filed: May 7, 2004
    Publication date: December 30, 2004
    Applicant: Shimadzu Corporation
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara
  • Publication number: 20040256569
    Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.
    Type: Application
    Filed: May 7, 2004
    Publication date: December 23, 2004
    Applicant: Shimadzu Corporation
    Inventor: Satoshi Tokuda
  • Publication number: 20040094721
    Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.
    Type: Application
    Filed: October 24, 2003
    Publication date: May 20, 2004
    Inventors: Satoshi Tokuda, Hiroyuki Kishihara
  • Patent number: 6635860
    Abstract: A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.
    Type: Grant
    Filed: April 8, 2002
    Date of Patent: October 21, 2003
    Assignee: Shimadzu Corporation
    Inventors: Kenji Sato, Toshinori Yoshimuta, Satoshi Tokuda
  • Publication number: 20030127598
    Abstract: A high withstand voltage insulating substance is formed between a radiation sensitive type amorphous semiconductor thick film suitable for forming a large area and an end edge portion of a voltage application electrode. As a result, concentration of an electric field on the end edge portion of the voltage application electrode is eliminated and a prestage phenomenon of penetration discharge or discharge breakdown is not caused.
    Type: Application
    Filed: October 17, 2002
    Publication date: July 10, 2003
    Applicant: SHIMADZU CORPORATION
    Inventors: Kenji Sato, Satoshi Tokuda
  • Patent number: 6512233
    Abstract: In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting base plate, which can be obtained in a short time. Thus, a radiation detector and a radiation image taking device having a large area can be obtained.
    Type: Grant
    Filed: September 27, 2000
    Date of Patent: January 28, 2003
    Assignee: Shimadzu Corporation
    Inventors: Toshiyuki Sato, Satoshi Tokuda
  • Publication number: 20020148949
    Abstract: A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.
    Type: Application
    Filed: April 8, 2002
    Publication date: October 17, 2002
    Applicant: SHIMADZU CORPORATION
    Inventors: Kenji Sato, Toshinori Yoshimuta, Satoshi Tokuda
  • Patent number: 6407374
    Abstract: A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: June 18, 2002
    Assignee: Shimadzu Corporation
    Inventors: Toshiyuki Sato, Satoshi Tokuda, Kenji Sato, Junichi Suzuki, Shinya Hirasawa, Naoyuki Hori, Toshinori Yoshimuta, Hidetoshi Kishimoto