Patents by Inventor Satoshi Tokuda
Satoshi Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7736941Abstract: In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.Type: GrantFiled: April 12, 2007Date of Patent: June 15, 2010Assignees: Shimadzu Corporation, Institute of National Colleges of Technology, JapanInventors: Satoshi Tokuda, Tamotsu Okamoto
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Publication number: 20100029037Abstract: In a light or radiation detector manufacturing method and a light or radiation detector of this invention, when forming a semiconductor, the semiconductor is formed in a predetermined thickness on a dummy substrate by vapor deposition, subsequently the dummy substrate is replaced with a graphite substrate which is a supporting substrate, and the semiconductor continues to be formed on the graphite substrate by vapor deposition. The time when forming the semiconductor in the predetermined thickness on the dummy substrate by vapor deposition is an initial state, and a defective film inevitably to be formed is formed on the dummy substrate. Subsequently, a semiconductor not in the initial state is formed on the graphite substrate put as replacement. This realizes a detector having the semiconductor of higher quality than in the prior art. The semiconductor manufactured in this way is formed continuously at least in a direction of thickness.Type: ApplicationFiled: April 12, 2007Publication date: February 4, 2010Inventors: Satoshi Tokuda, Tamotsu Okamoto
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Publication number: 20090090807Abstract: There is provided a system for readily and efficiently fabricating a wound coil composed of a bobbinless coil. The system includes a coil winding device having an upper jig to which an upper plate is attached and a lower jig to which a lower plate is attached which are provided so as to be relatively displaceable and a tension device for applying predetermined tension to a wire rod fed from a wire rod supplying source. The coil winding device is provided with a claw section having first through third split claws that function as a winding section around which the wire rod is wound between the upper and lower plates and that slide in a radial direction when the upper jig is assembled coaxially with the lower jig.Type: ApplicationFiled: August 29, 2008Publication date: April 9, 2009Inventors: Tomohiro Nomura, Hirozumi Kon, Satoshi Tokuda, Osamu Hinata
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Patent number: 7498189Abstract: In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.Type: GrantFiled: March 4, 2005Date of Patent: March 3, 2009Assignee: Shimadzu CorporationInventors: Toshiyuki Sato, Satoshi Tokuda
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Publication number: 20080217713Abstract: The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.Type: ApplicationFiled: July 10, 2007Publication date: September 11, 2008Applicant: SHIMADZU CORPORATIONInventors: Satoshi Tokuda, Hiroyuki Kishihara
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Patent number: 7420178Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.Type: GrantFiled: May 7, 2004Date of Patent: September 2, 2008Assignee: Shimadzu CorporationInventor: Satoshi Tokuda
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Patent number: 7301155Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.Type: GrantFiled: October 24, 2003Date of Patent: November 27, 2007Assignee: Shimadzu CorporationInventors: Satoshi Tokuda, Hiroyuki Kishihara
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Patent number: 6949749Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.Type: GrantFiled: June 6, 2001Date of Patent: September 27, 2005Assignees: Shimadzu Corporation, Sharp Kabushiki KaishaInventors: Satoshi Tokuda, Toshinori Yoshimuta, Yoshihiro Izumi, Osamu Teranuma
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Publication number: 20050158906Abstract: In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300° C. and 800° C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.Type: ApplicationFiled: March 4, 2005Publication date: July 21, 2005Applicant: SHIMADZU CORPORATIONInventors: Toshiyuki Sato, Satoshi Tokuda
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Patent number: 6885005Abstract: A high withstand voltage insulating substance is formed between a radiation sensitive type amorphous semiconductor thick film suitable for forming a large area and an end edge portion of a voltage application electrode. As a result, concentration of an electric field on the end edge portion of the voltage application electrode is eliminated and a prestage phenomenon of penetration discharge or discharge breakdown is not caused.Type: GrantFiled: October 17, 2002Date of Patent: April 26, 2005Assignee: Shimadzu CorporationInventors: Kenji Sato, Satoshi Tokuda
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Publication number: 20040262497Abstract: The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim 1 includes: a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.Type: ApplicationFiled: May 7, 2004Publication date: December 30, 2004Applicant: Shimadzu CorporationInventors: Satoshi Tokuda, Hiroyuki Kishihara
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Publication number: 20040256569Abstract: An industrial or medical radiation detector and a radiation imaging device equipped with the radiation detector are presented. The device improves the detection properties and production efficiency of the radiation detectors. The device includes a conductive support substrate; a semiconductor sensitivity film stacked onto the support substrate and generating a carrier (electron, positive hole) in response to an item to be detected; and means for reading equipped with an element for accumulating and reading the carrier generated by the semiconductor sensitivity film.Type: ApplicationFiled: May 7, 2004Publication date: December 23, 2004Applicant: Shimadzu CorporationInventor: Satoshi Tokuda
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Publication number: 20040094721Abstract: A radiation detector provided in a substrate with a detection layer which is sensitive to radiation, the detector being characterized in that said detection layer is formed by a polycrystal film comprising either one of CdTe (cadmium telluride), ZnTe (zinc telluride) and CdZnTe (cadmium zinc telluride) or a laminate film of polycrystal including at least one thereof, and is doped with Cl.Type: ApplicationFiled: October 24, 2003Publication date: May 20, 2004Inventors: Satoshi Tokuda, Hiroyuki Kishihara
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Patent number: 6635860Abstract: A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.Type: GrantFiled: April 8, 2002Date of Patent: October 21, 2003Assignee: Shimadzu CorporationInventors: Kenji Sato, Toshinori Yoshimuta, Satoshi Tokuda
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Publication number: 20030127598Abstract: A high withstand voltage insulating substance is formed between a radiation sensitive type amorphous semiconductor thick film suitable for forming a large area and an end edge portion of a voltage application electrode. As a result, concentration of an electric field on the end edge portion of the voltage application electrode is eliminated and a prestage phenomenon of penetration discharge or discharge breakdown is not caused.Type: ApplicationFiled: October 17, 2002Publication date: July 10, 2003Applicant: SHIMADZU CORPORATIONInventors: Kenji Sato, Satoshi Tokuda
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Patent number: 6512233Abstract: In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting base plate, which can be obtained in a short time. Thus, a radiation detector and a radiation image taking device having a large area can be obtained.Type: GrantFiled: September 27, 2000Date of Patent: January 28, 2003Assignee: Shimadzu CorporationInventors: Toshiyuki Sato, Satoshi Tokuda
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Publication number: 20020148949Abstract: A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconductor thick film. Moreover, an insulating auxiliary plate member having a thermal expansion coefficient, which is comparable to that of an insulating substrate, is formed on the surface of the top layer, in which the amorphous semiconductor thick film, the solvent-resistant and carrier-selective high-resistance film, and the voltage application electrode are formed, and fixed thereonto by using a high-withstand-voltage hardening synthetic resin in such a way as to cover the surface of the top layer.Type: ApplicationFiled: April 8, 2002Publication date: October 17, 2002Applicant: SHIMADZU CORPORATIONInventors: Kenji Sato, Toshinori Yoshimuta, Satoshi Tokuda
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Patent number: 6407374Abstract: A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.Type: GrantFiled: August 29, 2000Date of Patent: June 18, 2002Assignee: Shimadzu CorporationInventors: Toshiyuki Sato, Satoshi Tokuda, Kenji Sato, Junichi Suzuki, Shinya Hirasawa, Naoyuki Hori, Toshinori Yoshimuta, Hidetoshi Kishimoto
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Publication number: 20020014593Abstract: A detector panel having a bias application electrode and a converter layer formed on a supporting substrate, and a readout panel (active matrix panel), are bonded to each other directly through a single layer of electroconductive resin. That is, a pattern of photosensitive resin is formed before-hand on reading electrodes of the readout panel, and this readout panel and the converter layer are bonded together directly. Since the converter layer has no pixel electrodes formed thereon, the converter layer need not be smoothed, and the two panels need not be positionally adjusted to each other with high precision.Type: ApplicationFiled: June 6, 2001Publication date: February 7, 2002Inventors: Satoshi Tokuda, Toshinori Yoshimuta, Yoshihiro Izumi, Osamu Teranuma
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Patent number: 6344370Abstract: In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the stated order, and thereafter, a surface of the semiconductor layer is sprayed with ceramic particles by means of an abrasive grain jet nozzle. The abrasive grain jet nozzle repeatedly makes a high-speed reciprocating motion in an X direction at constant cycles while jetting the ceramic particles to the entirety of the surface of the semiconductor layer of the counter substrate moving in a Y direction, so that the surface of the semiconductor layer is subjected to a flattening treatment. This enables to provide a two-dimensional image detector in which a light/radiations detection element that provides effective improvement of a charge blocking effect and suppression of deterioration of reliability is applied.Type: GrantFiled: April 6, 2000Date of Patent: February 5, 2002Assignees: Sharp Kabushiki Kaisha, Shimadzu CorporationInventors: Yoshihiro Izumi, Osamu Teranuma, Toshiyuki Sato, Satoshi Tokuda, Toshinori Yoshimuta