Satoshi Tokuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the stated order, and thereafter, a surface of the semiconductor layer is sprayed with ceramic particles by means of an abrasive grain jet nozzle. The abrasive grain jet nozzle repeatedly makes a high-speed reciprocating motion in an X direction at constant cycles while jetting the ceramic particles to the entirety of the surface of the semiconductor layer of the counter substrate moving in a Y direction, so that the surface of the semiconductor layer is subjected to a flattening treatment. This enables to provide a two-dimensional image detector in which a light/radiations detection element that provides effective improvement of a charge blocking effect and suppression of deterioration of reliability is applied.
Abstract: An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.
Abstract: In a radiation detector, an active matrix board is formed of switching elements of polycrystalline silicon thin film transistors produced by a poly-silicon (poly-Si) process, charge storage capacitances, insulating layers, electrodes, gate lines and data lines, on which a converting layer is formed by polycrystalline, such as CdTe and CdZnTe, having a high sensitivity with respect to light and radiation at a film-forming temperature higher than 300° C. A gate driving circuit and a signal reading-out circuit are provided on the active matrix board, and signals of the respective images are scanned to take out to the outside. Thus, by using the high heat resistant matrix process board, the radiation detector having a wide dynamic range and a high signal to noise (S/N) ratio can be obtained.
Abstract: A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.