Abstract: First and second impurity diffusion regions are disposed in partial surface layers of a semiconductor substrate and spaced apart by some distance. A gate electrode is formed above a channel region defined between the first and second impurity diffusion regions. A gate insulating film is disposed between the channel region and gate electrode. Of the gate insulating film, a portion thereof disposed at least in a partial area along the longitudinal direction of a path interconnecting the first and second impurity diffusion regions, having a lamination structure of a first insulating film, a charge trap film and a second insulating film sequentially stacked in this order. The charge trap film is made of insulating material easier to trap electrons than the first and second insulating films.

Abstract: The present invention relates to an accumulator fuel injector for a diesel engine, the device including first and second accumulators which are connected through a check valve and a relief valve. Fuel pressurized and delivered by a fuel injection pump is charged into the first accumulator so as to increase its pressure abruptly. When the fuel pressure in the first accumulator reaches a selected relief pressure, the fuel is charged into the second accumulator through the check valve and is accumulated therein. When fuel injection is started by opening of an injection valve, the fuel accumulated in the first accumulator is injected through the injection valve and at the same time the fuel accumulated in the second accumulator flows out to the first accumulator through the relief valve so as to also be injected through the injection valve.