Abstract: A film forming method includes: (a) preparing a substrate having an oxide layer formed on the substrate; (b) supplying a nitrogen-containing gas to the substrate heated by a heater; and (c) forming a molybdenum film on the oxide layer by alternately supplying a raw material gas containing molybdenum and a reducing gas a plurality of times.

Abstract: A processing method is implemented in a substrate processing system. The system includes: a processing container including a stage on which a substrate is placed; an attachment portion to which a raw material container is detachably attached; a heater configured to produce a raw material gas; a carrier gas supplier configured to supply a carrier gas to the raw material container; a supply line configured to supply the raw material gas with the carrier gas; a controller configured to control at least one of the heater and a flow rate of the carrier gas supplied from the carrier gas supplier; and a determination portion configured to determine an initial filling state of the raw material container attached to the attachment portion. The processing method includes determining the initial filling state of the raw material container based on an operation record and a table.

Abstract: A source gas supply apparatus that supplies a source gas into a processing container, includes: a raw material container configured to contain a raw material, and to vaporize the raw material; a source gas supply flow path configured to supply the source gas including the vaporized raw material into the processing container; a flow rate measurement part installed in the source gas supply flow path, and configured to measure a flow rate of the source gas; a diluent gas supply flow path joining a downstream side of the flow rate measurement part in the source gas supply flow path, and configured to supply a diluent gas for diluting the source gas; and a gas mixer provided at a merging portion of the source gas supply flow path and the diluent gas supply flow path, and configured to mix the source gas with the diluent gas via a Venturi effect.

Abstract: A film forming method includes: (a) preparing a substrate having an oxide layer formed on the substrate; (b) supplying a nitrogen-containing gas to the substrate heated by a heater; and (c) forming a molybdenum film on the oxide layer by alternately supplying a raw material gas containing molybdenum and a reducing gas a plurality of times.

Abstract: A non-transitory computer-readable storage medium storing a control program that causes a computer to execute a process including receiving specified information generated in response to reception of an acquisition request of data from a terminal device that decrypts an encrypted data corresponding to the data, and identification information on the terminal device, determining whether or not the specified information is stored, in a storage unit, in association with the received identification information on the terminal device that has sent the acquisition request, the storage unit storing the specified information to be generated in association with the identification information on a terminal device for which a data acquisition is permitted for each of the plurality of pieces of data, and transmitting information that permits decryption of the encrypted data corresponding to the data to the terminal device when the specified information is stored in association with the received identification information.

Abstract: A source gas supply apparatus that supplies a source gas into a processing container, includes: a raw material container configured to contain a raw material, and to vaporize the raw material; a source gas supply flow path configured to supply the source gas including the vaporized raw material into the processing container; a flow rate measurement part installed in the source gas supply flow path, and configured to measure a flow rate of the source gas; a diluent gas supply flow path joining a downstream side of the flow rate measurement part in the source gas supply flow path, and configured to supply a diluent gas for diluting the source gas; and a gas mixer provided at a merging portion of the source gas supply flow path and the diluent gas supply flow path, and configured to mix the source gas with the diluent gas via a Venturi effect.

Abstract: There is provided a method of forming a metal film. The method includes forming a first metal film on a substrate accommodated in a processing container using a plasma CVD method by supplying a first gas including a metal precursor gas and a plasma excitation gas, and a second gas including a reducing gas and a plasma excitation gas into the processing container and after the forming the first metal film, forming a second metal film on the first metal film using a plasma CVD method by supplying a third gas including the metal precursor gas and the plasma excitation gas, and a fourth gas including the reducing gas and the plasma excitation gas into the processing container.

Abstract: A film-forming method includes: loading a substrate by raising a plurality of lift pins of a mounting table provided in a processing container to receive the substrate and lowering the plurality of lift pins to mount the substrate on an upper surface of the mounting table, the plurality of lift pins being configured to protrude from the upper surface of the mounting table and to support the substrate; preheating the substrate by heating the substrate mounted on the mounting table in a state where an inert gas has been introduced into the processing container; and forming a film on the substrate by introducing a processing gas into the processing container.

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.

Abstract: A display method executed by a computer. The method includes receiving an image captured by a camera, detecting a reference object in the image, receiving designation indicating a first position in the image, determining a size of an object in accordance with the first position and a captured shape of the reference object in the image, and superimposing the object on the first position with the determined size.

Abstract: A non-transitory computer-readable storage medium storing a control program that causes a computer to execute a process including receiving specified information generated in response to reception of an acquisition request of data from a terminal device that decrypts an encrypted data corresponding to the data, and identification information on the terminal device, determining whether or not the specified information is stored, in a storage unit, in association with the received identification information on the terminal device that has sent the acquisition request, the storage unit storing the specified information to be generated in association with the identification information on a terminal device for which a data acquisition is permitted for each of the plurality of pieces of data, and transmitting information that permits decryption of the encrypted data corresponding to the data to the terminal device when the specified information is stored in association with the received identification information.

Abstract: A substrate processing method is for forming a metal film on a target substrate by using a plasma. The method includes loading a target substrate having a silicon-containing layer on a surface thereof into a processing chamber which is pre-coated by a film containing a metal, introducing hydrogen gas and a gaseous compound of the metal and halogen into the processing chamber, generating a plasma, and forming a metal film on the target substrate. The method further includes performing a first reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, unloading the target substrate from the processing chamber, performing a second reduction process of forming an atmosphere of a plasma obtained by activating hydrogen gas in the processing chamber, and loading a next target substrate into the processing chamber.

Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.

Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.

Abstract: A Ti-based film forming method includes a step (step 1) of cleaning inside a chamber by introducing a cleaning gas containing fluorine into the chamber in a state where a wafer W is not provided on a susceptor; a step (step 2) of heating the susceptor in a state where the wafer W is not provided on the susceptor, injecting a processing gas containing Ti from a shower head into the chamber, and forming a pre-coated film at least on the surface of the shower head; and a step (step 3) of mounting the wafer W on the susceptor 2 in a state where the susceptor is heated, supplying a processing gas into the chamber 1 and forming a Ti-based film on the wafer W. The pre-coated film forming step is performed at a temperature lower than that in the film forming step.

Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

Abstract: A barrier layer including a titanium film is formed at a low temperature, and a TiSix film is self-conformably formed at the interface between the titanium film and the base. In forming the TiSix film 507, the following steps are repeated without introducing argon gas: a first step of introducing a titanium compound gas into the processing chamber to adsorb the titanium compound gas onto the silicon surface of a silicon substrate 502; a second step of stopping introduction of the titanium compound gas into the processing chamber and removing the titanium compound gas remaining in the processing chamber; and a third step of generating plasma in the processing chamber while introducing hydrogen gas into the processing chamber to reduce the titanium compound gas adsorbed on the silicon surface and react it with the silicon in the silicon surface to form the TiSix film 507.