Abstract: A substrate delivery mechanism comprises a top ring, a substrate loader for loading a substrate, and a pusher mechanism, wherein the substrate loader comprises a top ring guide and the pusher mechanism comprises a top ring guide lifting table, in which the top ring guide and the top ring guide lifting table together form a sealed space below the substrate held by the top ring in a condition where the substrate loader is moved up by the pusher mechanism, wherein the substrate is detached from the top ring by exhausting the sealed space while at the same time injecting a fluid from through-holes provided in a substrate holding surface of the top ring.

Abstract: A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

Abstract: A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.

Abstract: The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: The present invention relates to a polishing apparatus having a plurality of polishing units (30A-30D). Moving mechanisms for moving top rings (301A˜301D) between polishing positions on the polishing surfaces and wafer receiving/delivering positions are provided in each of the polishing units. Linear transporters (5, 6) are provided for transferring the wafer between a plurality of transferring positions (TP1-TP7) including the wafer receiving/delivering positions. Pushers (33, 34, 37, 38) for receiving and delivering the wafer between the linear transporters (5, 6) and the top rings (301A-301D) are provided at the transferring positions (TP2, TP3, TP6, TP7) as the wafer receiving/delivering positions.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: A polishing apparatus for polishing a workpiece has a polishing unit and a cleaning unit. The polishing unit has a polishing table having a polishing surface thereon, and a top ring for pressing the workpiece against the polishing surface. The cleaning unit has a rotatable shaft configured to be vertically movable, a holding mechanism mounted to the rotatable shaft for detachably holding the workpiece, and a plurality of cleaning devices disposed around the rotatable shaft for cleaning the workpiece which has been polished in the polishing unit.

Abstract: A polishing apparatus includes a top ring for holding a substrate and a polishing table having a polishing surface. The substrate held by the top ring is brought into contact with the polishing surface, and in this state, the polishing table and the substrate are moved relative to each other to thereby polish the substrate. Expendable replacement components to be bonded to the top ring and the polishing table, such as a backing film, a pressure ring and a polishing cloth, are bonded in such a manner that pieces of heat-sensitive adhesive tape are interposed between the expendable replacement components on the one hand and the top ring and the polishing table on the other. The heat-sensitive adhesive tape is switchable between a non-adhesive state and a adhesive state according to whether the temperature thereof is higher or lower than a predetermined set temperature.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus comprises a turntable having a polishing surface, a top ring for holding a workpiece and pressing the workpiece against the polishing surface to polish the workpiece, at least three cleaning apparatuses for cleaning polished workpieces, and a transfer structure for transferring the polished workpieces between at least three cleaning apparatuses. The polishing apparatus further includes a rotary transporter disposed in a position which can be accessed by said top rings and having a plurality of portions positioned on a predetermined circumference from a center of rotation of the rotary transporter for holding the workpieces.

Abstract: The precoat film forming method of a film forming device having a loading table for loading the object, includes a deposition step of feeding processing gas inside the film forming device and depositing a precoat TiN film on the surface of the loading table and a stabilization step of reducing and stabilizing the precoat film on the loading table, wherein the precoat film formed on the loading table at the deposition step has a film thickness within a range such that even if the film thickness of the precoat film changes, a radiation heat quantity from the loading table becomes generally constant. Therefore, as the thermal stability is maintained at the film forming process of semiconductor wafers, it is possible to improve the reproducibility in the film forming process.

Abstract: A substrate delivery mechanism comprises a top ring 10, a substrate loader 50 for loading a substrate Wf, and a pusher mechanism 20, wherein the substrate loader 50 comprises a top ring guide 53 and the pusher mechanism 20 comprises a top ring guide lifting table 21, in which the top ring guide 53 and the top ring guide lifting table 21 together form a sealed space M below the substrate Wf held by the top ring 10 in a condition where the substrate loader 50 is moved up by the pusher mechanism 20, wherein the substrate Wf is detached from the top ring 10 by exhausting the sealed space M while at the same time injecting a fluid from through-holes provided in a substrate holding surface of the top ring 10.

Abstract: The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved.

Abstract: A dressing apparatus is used for dressing a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer. The dressing apparatus for dressing apparatus comprises a dresser having a dressing surface for dressing the polishing surface, and the dressing surface has an area which covers an entire area of the polishing surface.

Abstract: Disclosed is a dressing apparatus wherein a polishing surface can be regenerated stably over a long period without any danger of an object to be polished being scratched. A dressing surface 50a of a dresser 48 is caused to slide on a polishing surface 30a of a polishing table 22 while the dressing surface is urged against the polishing surface. The dressing surface is formed from a grindstone 50.

Abstract: The present invention provides a substrate holder for holding and transferring a thin substrate, comprising a substrate support member having a recessed area for placing a thin substrate therein and substrate mount portions formed in the recessed area in the vicinity of a circumferential edge thereof. The substrate mount portions is adapted to be engaged with an outer circumferential portion of a backside of the substrate placed in the recessed area. The substrate holder further comprises a substrate detector for detecting presence or absence of the substrate in the recessed area.

Abstract: An object of the present invention is to provide a polishing apparatus with a grinding plate that can easily and reliably be installed on and detached from a turntable. The polishing apparatus has a grinding plate tool, fixedly mounted on the turntable, which includes the grinding plate, and a top ring for holding a workpiece to be polished and pressing the workpiece against the grinding plate in sliding contact therewith for polishing a surface of the workpiece to a flat, mirror finish. A clamping mechanism is mounted in the turntable for fixing an outer circumferential flange of the grinding plate tool to the turntable.