Abstract: An invention is disclosed for protecting an input buffer. A current from a p-supply to an input buffer is lowered when an input voltage to the input buffer is tolerant HIGH. The p-supply being a VDD voltage supplied to a p-channel transistor in the input buffer. In addition, the p-supply is set to a particular voltage when the input voltage to the input buffer is LOW, the particular voltage being at a specific value such that input transistors within the input buffer do not experience overstress voltages. Optionally, p-supply can be prevented from supplying current to the input buffer when an input voltage to the input buffer is tolerant HIGH.

Abstract: A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.

Abstract: A semiconductor package comprising a wafer having an active surface comprising at least one integrated circuit, wherein each integrated circuit has a plurality of bond pads; and a cured silicone layer covering the surface of the wafer, provided at least a portion of each bond pad is not covered with the silicone layer and wherein the silicone layer is prepare by the method of the invention.

Abstract: The present invention provides immersion chemical processing systems capable of providing a desired blend of at least two chemicals to an immersion bath as well as methods of treating substrates immersively. The system is capable of producing a blend with one or more desired properties extremely accurately due at least in part to the capability of the system to monitor at least one property of the blend or at least one parameter of the immersion process and to utilize the information gathered to provide dynamic closed-loop feedback control of one or more process parameters known to relate to the same.

Abstract: A semiconductor package comprising a wafer having an active surface comprising at least one integrated circuit, wherein each integrated circuit has a plurality of bond pads; and a cured silicone layer covering the surface of the wafer, provided at least a portion of each bond pad is not covered with the silicone layer and wherein the silicone layer is prepare by the method of the invention.

Abstract: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of organosulfates described by formula R2SO4H and alkali metal salts thereof, where R2 is selected from the group consisting of alkyl groups comprising about 4 to 16 carbon atoms and alkylphenyl groups comprising 7 to about 22 carbon atoms.

Abstract: A method of cleaning a surface of an article using cleaning liquids in combination with acoustic energy. Preferably, an ultradilute concentration of a cleaning enhancement substance, such as ammonia gas, is dissolved in a liquid solvent, such as filtered deionized water, to form a cleaning liquid. The cleaning liquid is caused to contact the surface to be cleaned. Acoustic energy is applied to the liquid during such contact. Optionally, the surface to be cleaned can be oxidized, e.g., by ozonated water, prior to cleaning.

Abstract: A method for hydrolyzing chlorosilanes having at least three chlorine atoms bonded to each silicon atom to form silicone resins. The method comprises adding at least one of hydridotrichlorosilane, tetrachlorosilane, or organotrichlorosilane to a two-phase mixture comprising a non-polar organic solvent, an aqueous phase comprising 0 to about 43 weight percent hydrochloric acid, and a surface active compound selected from the group consisting of alkylsulphonic acid hydrate, alkali metal salt of alkylsulphonic acid, arysulphonic acid hydrate, and alkali metal salt of arylsulphonic acid.

Abstract: Stiction in a microstructure may be eliminated by directing a cryogenic aerosol at the portion of the microstructure subject to stiction with sufficient force so as to free the portion of the microstructure.

Abstract: A process module which can be integrated with a reduced pressure cluster tool system for semiconductor wafer processing to perform ambient or near ambient pressure reactions without requiring an intermediate buffer chamber.

Abstract: Heating metal articles by direct surface impingement of an oxy-fuel flame without causing damage, or surface melting of the articles being heated. Flame contact is cycled to achieve maximum allowable rate of heat introduction thereby substantially reducing the time and energy required to achieve the final desired piece temperature.