Abstract: A method of forming a gate electrode with a titanium polycide which can prevent particle creation and abnormal oxidation of the gate electrode, is disclosed. In the present invention, a gate oxidation process is performed after implanting Si ions into the side wall or overall surface of the titanium silicide layer, thereby preventing abnormal oxidation of the titanium silicide during the gate oxidation process. Furthermore, a titanium silicide layer is deposited to a low mole ratio of Si/Ti, thereby minimizing particle creation.

Abstract: A method of forming a gate electrode with a titanium polycide structure capable of preventing abnormal oxidation of the gate electrode when performing gate re-oxidation process, is disclosed. In the present invention, after forming a gate electrode having a stacked structure of a polysilicon layer and a titanium silicide layer, thermal-treating is performed under nitrogen atmosphere to form a TiN layer on the side wall of the titanium silicide layer, considering as silicon content of the titanium silicide layer is high, abnormal oxidation decreases. At this time, a titanium silicide layer having deficient Ti is formed on the side wall of the titanium silicide layer adjacent to the TiN layer. Therefore, after removing the TiN layer, the side wall of the titanium silicide layer having excessive Si (or deficient Ti) is exposed. Thereafter, gate re-oxidation process is performed. At this time, abnormal oxidation of the titanium silicide layer is prevented by the titanium silicide layer having excessive silicon.

Abstract: A method of forming a gate electrode with a titanium polycide structure which can prevent abnormal oxidation of the gate electrode and reduce the resistivity of the gate electrode when performing a re-oxidation process, is disclosed. According to the present invention, a gate oxide layer, a polysilicon layer and a titanium silicide layer are formed on a semiconductor substrate, in sequence. A mask insulating layer is then formed in the shape of a gate electrode on the titanium silicide layer and the titanium silicide layer and the polysilicon layer are etched using the mask insulating layer to form a gate electrode. Thereafter, the substrate is oxidized using re-oxidation process to form an oxide layer with a uniform thickness on the side wall of the gate electrode and on the surface of the substrate. Here, the re-oxidation process is performed at the temperature of 750° C. or less using dry oxidation. Furthermore, the re-oxidation process is performed at the temperature of 700 to 750° C.

Abstract: A method of forming a gate electrode with a polycide structure in a semiconductor device which can improve the interface roughness between a polysilicon layer and a silicon layer, is disclosed. According to the present invention, a gate insulating layer and a doped polysilicon layer on the gate insulating layer are formed on a semiconductor substrate. A nitrogenous polysilicon layer is then formed on the surface of the polysilicon layer by ion-implanting nitrogen ions (N2+) into the surface of the polysilicon layer or by thermal-treating the surface of the polysilicon under the atmosphere of gas containing nitrogen. Next, a metal silicide layer is formed on the nitrogenous polysilicon layer. Thereafter, the metal silicide layer, the nitrogenous polysilicon layer and the polysilicon layer are etched sequentially to form a gate electrode.

Abstract: There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.

Abstract: A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050-1,200.degree. C. to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.

Abstract: A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

Abstract: A field oxide formation method involving a primary field oxidation, which is carried out at a predetermined low temperature to form a field oxide film having a thickness smaller than a target thickness, and a secondary field oxidation, which is carried out at a higher temperature capable of relatively reducing the occurrence of a field thinning phenomenon, to form the remaining thickness portion of the target field oxide film. The field thinning phenomenon involved in a field oxidation is reduced. The characteristics of a finally produced gate oxide film is also improved. Consequently, the throughput and reliability of semiconductor devices having gate oxide films are improved.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: There is disclosed a method for making a field oxide, by which wafer warpage is minimized when a local oxidation of silicon process is applied for a large wafer. A material layer having a compressive stress and a nitride are laminated over the back side of a wafer, so that the compressive stress of the material layer complementarily interacts with the tensile stress of the nitride.

Abstract: A simple and accurate measurement of leakage current in the junction region of a semiconductor device involves a simple processing step carried out after element-isolating oxide films are formed. A method of measuring the junction leakage current involves providing a first-conduction-type silicon substrate, forming a first-conduction-type well in the substrate, forming element-isolating oxide films on the substrate, implanting second-conduction-type impurity ions in the substrate to form impurity diffusion regions, forming a conductive layer for an electrode over a resulting structure. Then, the method involves patterning the conductive layer to define plural dies that each have plural cells that each include the impurity diffusion regions and the conductive layer. Finally, reverse voltage is applied to the impurity diffusion regions and the substrate so as to measure the junction leakage current.

Abstract: A method for forming a field oxide film for element isolation of a structure extending deeply in the substrate and having a step of small height, thereby exhibiting a low topology and a reduced bird's beak.