Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.

Abstract: A composition for depositing a high quality silicon nitride is introduced into a reactor that contains a substrate, followed by introduction of a plasma that includes an ammonia source. The composition includes a silicon precursor compound having Formula as defined herein.

Abstract: The present invention pertains to a dosing regimen for treating influenza virus diseases, and more specifically, to a method for treating influenza virus-related diseases through the administration of a mixed composition of monoclonal antibodies having a neutralizing activity against the influenza A virus. The treatment method according to the present invention enables influenza A virus-related diseases to be treated through the intravenous administration of a mixed composition of monoclonal antibodies having a neutralizing activity against the influenza A virus. In addition, the treatment method according to the present invention can satisfy unmet medical needs for biological therapeutic agents for influenza virus-related diseases.

Abstract: A method for forming a silicon nitride film that may be carbon doped via a plasma ALD process includes introducing a substrate into a reactor, which is heated to up to about 600° C. At least one silicon precursor as defined herein and having one or two Si—C—Si linkages is introduced to form a chemisorbed film on the substrate. The reactor is then purged of any unconsumed precursors and/or reaction by-products with a suitable inert gas. A plasma comprising nitrogen is introduced into the reactor to react with the chemisorbed film to form the silicon nitride film that may be carbon doped. The reactor is again purged of any reaction by-products with a suitable inert gas. The steps are repeated as necessary to bring the deposited silicon nitride film that may be carbon doped to a predetermined thickness.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.

Abstract: A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: Disclosed is a lamp control device. The lamp control device may include: a lamp having an LED channel; a channel resistor corresponding to the LED channel; and a controller configured to boost a channel resistor voltage applied to the channel resistor, and retain a channel current of the LED channel as a target current, using the boosted channel resistor voltage.

Abstract: Disclosed is a lamp control device. The lamp control device may include: a lamp having an LED channel; a channel resistor corresponding to the LED channel; and a controller configured to boost a channel resistor voltage applied to the channel resistor, and retain a channel current of the LED channel as a target current, using the boosted channel resistor voltage.

Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.

Abstract: A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.

Abstract: The present invention relates to technology for driving a display device, and provides technology which, in sensing pixels arranged in a panel, processes a signal having a wide range by using a low-voltage element.

Abstract: Provided is a substrate treatment apparatus. The apparatus includes a chuck supporting a substrate and being rotatable, a container surrounding the chuck and collecting chemicals scattered due to rotations of the substrate, and a first spray nozzle spraying the chemicals to the substrate.

Abstract: The present invention provides a technology of simultaneously sensing characteristics of a plurality of OLED pixels. Further, a current mirroring circuit for sensing characteristics of OLED pixels can be applied to fields other than sensing characteristics of OLED pixels, and the current mirroring technology can output sensing currents having a uniform magnitude within a predetermined error range to a plurality of output terminals.

Abstract: Provided is a lighting apparatus. The lighting apparatus may provide an output voltage to lighting loads, and include: a converter configured to generate the output voltage using a driving signal; and a driving circuit configured to provide the driving signal, and spread the frequency of the driving signal by performing frequency dithering on the driving signal while changing the shape of an oscillation signal.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.

Abstract: A lamp control device includes a converter configured to provide an output voltage and an internal voltage; a lamp including an LED module which has a plurality of LED channels, and configured to emit light in correspondence to the output voltage of the converter; and a controller configured to operate by using the internal voltage of the converter, control the output voltage of the converter to be retained at a level equal to or higher than a predetermined level, by using feedback voltages of the plurality of LED channels, and control channel currents of the plurality of LED channels to be regulated in correspondence to memory values which are set in advance.

Abstract: The present invention relates to technology for driving a display device, and provides technology which, in sensing pixels arranged in a panel, processes a signal having a wide range by using a low-voltage element.

Abstract: The present invention provides a technology of simultaneously sensing characteristics of a plurality of OLED pixels. Further, a current mirroring circuit for sensing characteristics of OLED pixels can be applied to fields other than sensing characteristics of OLED pixels, and the current mirroring technology can output sensing currents having a uniform magnitude within a predetermined error range to a plurality of output terminals.